Kinetics of Plasma Etching Silicon with Nitrogen Trifluoride
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AbstractA kinetic model, composed of elementary chemical reactions, is derived to predict the etch rate of crystalline silicon with NF3 in a plasma discharge.Experimental data taken from a radial flow plasma etching reactor is used to determine the model's kinetic parameters.The rate constant for atomic fluorine reacting with <100> silicon was determined to be 1410 cm/min at 25 °C, in good agreement with a value obtained by other investigators.
1991 ◽
Vol 56
(10)
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pp. 2020-2029
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2010 ◽
Vol 660-661
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pp. 593-598
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Further study on kinetic modeling of sunflower oil methanolysis catalyzed by calcium-based catalysts
2016 ◽
Vol 22
(2)
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pp. 137-144
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2016 ◽
Vol 22
(4)
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pp. 409-418
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2002 ◽
Vol 88
(09)
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pp. 380-386
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1930 ◽
Vol 128
(808)
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pp. 407-417
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