Dislocation Dynamics Simulations of Dislocation Interactions in Thin Fcc Metal Films

2001 ◽  
Vol 673 ◽  
Author(s):  
Prita Pant ◽  
K.W. Schwarz ◽  
S.P. Baker

ABSTRACTMesoscopic simulations of dislocation interactions in thin, single crystal FCC metal films were carried out. Interactions between threading-misfit and threading-threading dislocation pairs were studied and the strength of the interactions determined. Threading-threading interactions were found to be significantly stronger than threading-misfit interactions. Dislocations with different possible combinations of Burgers vectors were studied under cyclic loading. Only annihilation of dislocations was seen to result in residual dislocation structure after complete unloading. No differences were observed in the nature of threading-misfit interactions in 111 and 001 oriented films.

2003 ◽  
Vol 51 (11) ◽  
pp. 3243-3258 ◽  
Author(s):  
Prita Pant ◽  
K.W. Schwarz ◽  
Shefford P. Baker

2015 ◽  
Vol 1 (1) ◽  
Author(s):  
Sagar Chandra ◽  
M. K. Samal ◽  
V. M. Chavan ◽  
R. J. Patel

AbstractA hierarchical multiscale modeling approach is presented to predict the mechanical response of dynamically deformed (1100 s−1−4500 s−1) copper single crystal in two different crystallographic orientations.Anattempt has been made to bridge the gap between nano-, micro- and meso- scales. In view of this, Molecular Dynamics (MD) simulations at nanoscale are performed to quantify the drag coefficient for dislocations which has been exploited in Dislocation Dynamics (DD) regime at the microscale. Discrete dislocation dynamics simulations are then performed to calculate the hardening parameters required by the physics based Crystal Plasticity (CP) model at the mesoscale. The crystal plasticity model employed is based on thermally activated theory for plastic flow. Crystal plasticity simulations are performed to quantify the mechanical response of the copper single crystal in terms of stressstrain curves and shape changes under dynamic loading. The deformation response obtained from CP simulations is in good agreement with the experimental data.


2002 ◽  
Vol 124 (3) ◽  
pp. 290-296 ◽  
Author(s):  
David H. Lassila ◽  
Mary M. LeBlanc ◽  
Gregory J. Kay

An apparatus has been developed for performing compression deformation experiments on oriented metallic single crystals to provide data for validation of 3-D dislocation dynamics simulations. The experiment is performed under conditions that allow unconstrained motion of the upper and lower compression platen, and thus a relatively uniform state of axial stress is maintained during the deformation. Experiments have been performed on high-purity Mo single crystal and polycrystalline Cu. Various aspects of the experimental procedures and results are presented. Possible usages of the experimental data for the validation of 3-D dislocation dynamics simulations are discussed.


Materialia ◽  
2019 ◽  
Vol 8 ◽  
pp. 100501 ◽  
Author(s):  
G. L'Hôte ◽  
S. Cazottes ◽  
J. Lachambre ◽  
M. Montagnat ◽  
P. Courtois ◽  
...  

1995 ◽  
Vol 399 ◽  
Author(s):  
Yury. N. Stepanov ◽  
Alexander M. Scorupsky

ABSTRACTThe effect of cyclic uniaxial loading applied to surfaces of thin single crystal plates on dislocation structure is analyzed analytically and numerically. This work investigates detailed changes in dislocation structure near surfaces and in size and concentration of dislocation loops inside the crystal. The results may be helpful in choosing the optimum regime for material processing and in predicting material properties.


2020 ◽  
Vol 29 (01n04) ◽  
pp. 2040003
Author(s):  
Tedi Kujofsa ◽  
J. E. Ayers

Strained-layer superlattices (SLSs) have been used to modify the threading dislocation behavior in metamorphic semiconductor device structures; in some cases they have even been used to block the propagation of threading dislocations and are referred to in these applications as “dislocation filters.” However, such applications of SLSs have been impeded by the lack of detailed physical models. Here we present a “zagging and weaving” model for dislocation interactions in multilayers and strained-layer superlattices, and we demonstrate the use of this model to the threading dislocation dynamics in InGaAs/GaAs (001) structures containing SLSs.


Sign in / Sign up

Export Citation Format

Share Document