Crystallographic and morphological properties of magnetron sputtered Ti and Zr thin films

2001 ◽  
Vol 672 ◽  
Author(s):  
Eliane F. Chinaglia ◽  
Ivette C. Oppenheim
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Crystallographic Orientation ◽  
Morphological Characteristics ◽  
Grain Structure ◽  
Morphological Properties ◽  
Zone Model ◽  
Zone Ii ◽  
Columnar Grain ◽  
Ti Films

ABSTRACTCrystallographic and surface morphological characteristics of polycrystalline hcp Ti and Zr thin films were studied as a function of the homologous substrate temperature TS/TM and the thickness t of the films (28 nm ≤ t ≤ 380 nm). TS is the substrate temperature during deposition and TM is the melting point of the film's material. For the whole range of considered temperatures (0.14 ≤ TS/TM ≤ 0.48) Zr films presented a {0002} crystallographic orientation. As TS/TM increased, Ti films suffered a transition from a columnar grain structure with {0002} preferential crystallographic orientation to a cone-like-shape grain structure with {1011} preferential crystallographic orientation. Our results suggest that Zr films suffer a structural transition from Zone T to Zone II at temperatures similar to those predicted by Thornton's Structure Zone Model for thick films while Ti films do not have a microstructure typical of Zone II even for relatively high values of TS/TM, presenting a transition from Zone I to Zone T in the studied range of temperatures.

EFFECT OF SUBSTRATE TEMPERATURE ON MICRO-STRUCTURAL PROPERTIES OF Ti AND TiN FILMS DEPOSITED BY E-BEAM EVAPORATION TECHNIQUE

2012 ◽  
Vol 19 (04) ◽  
pp. 1250037
Author(s):  
NISHAT ARSHI ◽  
JUNQING LU ◽  
BON HEUN KOO ◽  
CHAN GYU LEE ◽  
FAHEEM AHMED
Keyword(s):  
Substrate Temperature ◽  
Grain Structure ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
Tin Films ◽  
Evaporation Technique ◽  
Columnar Grain ◽  
Influence Of Substrate ◽  
Xrd Patterns ◽  
Deposited Films

We report the deposition of Ti and TiN films on Si/SiO2 (100) substrate using e-beam evaporation technique. The influence of substrate temperature on the structural and morphological properties has been studied. The structure and morphology of the deposited films were analyzed by X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM) measurements, respectively. XRD patterns reveal the FCC symmetry for both the Ti and TiN films. The grain size of the films was found to increase with the increase in substrate temperature. FESEM micrographs showed a smooth morphology of the film with columnar grain structure.

Ionic Conductivities of Doped CeO2 Thin Films as Related to Their Microstructure

1995 ◽  
Vol 411 ◽  
Author(s):  
Chunyan Tian ◽  
Siu-Wai Chan
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Ionic Conductivities ◽  
Dielectric Constants ◽  
Grain Structure ◽  
X Ray Diffraction ◽  
Fine Grain ◽  
Brick Layer Model ◽  
Columnar Grain ◽  
Beam Deposition

ABSTRACTThin films of 4% Y2O3 doped CeO2/Pd film/(001)LaA103 with a very low pinhole density were successfully prepared using electron-beam deposition technique. The microstructure of the films was characterized by x-ray diffraction and the electrical properties were studied as a function of temperature with AC impedance spectroscopy. A brick layer model was adopted to correlate the electrical properties to the microstructure of the films, which can be simplified as either a series or a parallel equivalent circuit associated with either a fine grain or a columnar grain structure, respectively. The conductivities of the films fell between the conductivities derived from the two circuit models, suggesting that the films are of a mixed fine grain and columnar grain structure. The measured dielectric constants of the films were found smaller than that of the bulk.

scholarly journals Investigation of growth characteristics and semimetal–semiconductor transition of polycrystalline bismuth thin films

IUCrJ ◽  
2020 ◽  
Vol 7 (1) ◽  
pp. 49-57 ◽  
Author(s):  
Nan Wang ◽  
Yu-Xiang Dai ◽  
Tian-Lin Wang ◽  
Hua-Zhe Yang ◽  
Yang Qi
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Film Thickness ◽  
Single Crystal ◽  
Growth Characteristics ◽  
Metallic Surface ◽  
Zone Model ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Zone Ii

The preferred orientation growth characteristics and surface roughness of polycrystalline bismuth (Bi) thin films fabricated on glass substrates using the molecular beam epitaxy method were investigated at temperatures ranging from 18 to 150°C. The crystallization and morphology were analyzed in detail and the polycrystalline metal film structure-zone model (SZM) was modified to fit the polycrystalline Bi thin film. The boundary temperature between Zone T and Zone II in the SZM shifted to higher temperatures with the increase in film thickness or the decrease of growth rate. Furthermore, the effect of the thickness and surface roughness on the transport properties was investigated, especially for Bi thin films in Zone II. A two-transport channels model was adopted to reveal the influence of the film thickness on the competition between the metallic surface states and the semiconducting bulk states, which is consistent with the results of Bi single-crystal films. Therefore, the polycrystalline Bi thin films are expected to replace the single-crystal films in the application of spintronic devices.

Deposition and characterization of ZrO2 thin films on silicon substrate by MOCVD

1993 ◽  
Vol 8 (6) ◽  
pp. 1361-1367 ◽  
Author(s):  
Cheol Seong Hwang ◽  
Hyeong Joon Kim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Surface ◽  
Relative Dielectric Constant ◽  
Grain Structure ◽  
Breakdown Field ◽  
Electrical Characteristics ◽  
Dielectric Thin Film ◽  
Si Substrates ◽  
Columnar Grain

ZrO2 thin films were deposited at 1 atm on Si substrates by oxidation-assisted thermal decomposition of zirconium-trifluoroacetylacetonate in the temperature range of 300–615 °C. Above a deposition temperature of 400 °C, the deposited thin films have a columnar grain structure, where each grain is perpendicular to the substrate surface with a c-axis preferred crystallographic orientation, and have poor electrical characteristics as a dielectric thin film. But the thin film deposited at 350 °C has a fine equiaxed microcrystalline structure and has superior electrical characteristics of a breakdown field of 1 MV/cm and a relative dielectric constant of 27.

Image processing to delineate defect structures in HREM images of vapor-deposited thin films

1989 ◽  
Vol 47 ◽  
pp. 128-129
Author(s):  
R.M. Fisher ◽  
J.Z. Duan ◽  
Crispin J. Hetherington ◽  
Norman Fowler
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Cross Sections ◽  
Failure Modes ◽  
Grain Structure ◽  
Intrinsic Stress ◽  
Plan View ◽  
Transmission Electron ◽  
Columnar Grain ◽  
Chromium Films

The resistance of deposited thin films to cracking or delamination from substrates during production or service, crucial to the long term reliability of IC devices, is under study as part of a broad program on interfacial bonding and adhesion. Chromium films, of particular interest because of their widespread use in microelectronics, are especially prone to mechanical failure due to the high residual stresses that are generally present and their low fracture toughness. Transmission and scanning electron microscopy are being used to define the columnar grain structure and failure modes and x-ray diffraction is being employed to determine the nature of through-thickness stress gradients that occur in such films.The intrinsic stress, as distinguished from the extrinsic stress caused by differential contraction between film and substrate during cooling from the deposition temperature, results from the presence of vacancies and diffuse “voids” trapped between the columns during deposition. Transmission electron microscopy of plan-view and cross-sections is being used in efforts to observe and define the structure of the inter-columnar regions.

scholarly journals Compositional, Structural, Morphological, and Optical Properties of ZnO Thin Films Prepared by PECVD Technique

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 202
Author(s):  
Noureddine Hacini ◽  
Mostefa Ghamnia ◽  
Mohamed Amine Dahamni ◽  
Abdelwaheb Boukhachem ◽  
Jean-Jacques Pireaux ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Photoelectron Spectroscopy ◽  
Morphological Properties ◽  
Zno Thin Films ◽  
Zno Films ◽  
Textured Surfaces ◽  
Xps Spectra ◽  
X Ray

ZnO thin films were synthesized on silicon and glass substrates using the plasma-enhanced chemical vapor deposition (PECVD) technique. Three samples were prepared at substrates temperatures of 200, 300, and 400 °C. The surface chemical composition was analyzed by the use of X-Ray Photoelectron spectroscopy (XPS). Structural and morphological properties were studied by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). Optical properties were carried out by UV-visible spectroscopy. XPS spectra showed typical peaks of Zn(2p3/2), Zn(2p1/2), and O(1s) of ZnO with a slight shift attributed to the substrate temperature. XRD analysis revealed hexagonal wurtzite phases with a preferred (002) growth orientation that improved with temperature. Calculation of grain size and dislocation density revealed the crystallization improvement of ZnO when the substrate temperature varied from 200 to 400 °C. SEM images of ZnO films showed textured surfaces composed of grains of spherical shape uniformly distributed. The transmittance yields are reaching 80%, and the values of the band-gap energy indicate that the ZnO films prepared by PECVD present transparent and semiconducting properties.

scholarly journals TiO2 thin films: Impact of substrate temperature on structural and morphological properties

2020 ◽  
Vol 1 (1) ◽  
pp. 24-29
Author(s):  
Suresh R ◽  
◽  
Subash S ◽  
Thirumal Valavan K ◽  
Justin Paul M ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Anatase Phase ◽  
Morphological Properties ◽  
Room Temperature Resistivity ◽  
Tio2 Thin Films ◽  
Nebulizer Spray Pyrolysis ◽  
Crystalline Nature ◽  
Lower Temperature ◽  
Nebulizer Spray

Smooth and white spherical shaped TiO2 thin films are successfully deposited by Nebulizer Spray Pyrolysis (NSP) technique. The TiO2 thin films are characterized by XRD, SEM, DRS, PL and I-V analysis. Anatase phase polycrystalline tetragonal structure with preferential orientation along (1 0 1) direction obtained form XRD. The expansion and contraction of Ti-O bonds leads to a high crystalline nature with its purity at 289 nm. The absorbance increases with substrate temperature due to the decrease of film thickness, packing density and shrinkage of spray droplets. TiO2 thin films indicate that the film is made up of small granules having slab like particles with some voids at lower temperature. The tiny particles are combined together to form white spherical shaped flower particles with pinholes at 450oC. A room temperature resistivity of the film deposited at 400oC is found to be in the order of 105 Ω/cm, which decreases to 103 Ω/cm for the films prepared at 450oC.

Creep-controlled Diffusional Hillock Formation in Blanket Aluminum Thin Films as a Mechanism of Stress Relaxation

2000 ◽  
Vol 15 (8) ◽  
pp. 1709-1718 ◽  
Author(s):  
Deok-Kee Kim ◽  
William D. Nix ◽  
Michael D. Deal ◽  
James D. Plummer
Keyword(s):  
Thin Films ◽  
Grain Structure ◽  
Formation Model ◽  
Surrounding Area ◽  
Grain Sizes ◽  
Hillock Formation ◽  
Diffusional Relaxation ◽  
New Type ◽  
Columnar Grain ◽  
Sputter Deposited

Hillock formation, a stress-induced diffusional relaxation process, was studied in sputter-deposited Al films. The grain sizes in these films were small compared to those in other sputter-deposited Al films, and impurities (O, Ti, W) were incorporated during the preparation of the films. Stress and hardness measurements both indicate that the Al films were strengthened by the small grain size and incorporated impurities. We observed a new type of hillock in these Al thin films after annealing for 2 h at 450 °C in a forming gas ambient. The hillocks were composed of large Al grains created between the substrate and the original Al film with its columnar grain structure, apparently by diffusion from the surrounding area. By modifying the boundary conditions of Chaudhari's hillock formation model [P. Chaudhari, J. Appl. Phy. 45, 4339 (1974)], we have created a new model that can describe the experimentally observed hillocks. Our model seems to explain the experimentally observed abnormal hillock formation and may be applied to other types of hillock formation using different creep laws.

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