Modeling Threading Dislocation Loop Nucleation and Evolution in MeV Boron Implanted Silicon

ABSTRACTA single statistical point defect based model for the nucleation and evolution of dislocation loops during annealing in Si is developed. The model assumes that the radius and the density of dislocation loops follow a log normal distribution. The loop nucleation part of the model also assumes that all the loops come from {311} unfaulting. The model is verified with the experimental results obtained by studying the formation of dislocation loops and threading dislocation loops as a function of implant condition in boron implanted silicon by varying the dose from 1×1013 to 5×1014 cm−2 at an energy of 1.5 MeV. Due to the statistical nature of the model, the threading dislocation loop density is easily obtained from simulation results. The dramatic change in the threading dislocation loop density withthe increasing implant dose is also predicted by the simulations.