Thiophene Oligomer and NTCDI Semiconductors with High Field-effect Transistor On/off Ratios

2001 ◽  
Vol 665 ◽  
Author(s):  
Howard E. Katz ◽  
Andrew J. Lovinger ◽  
X. Michael Hong ◽  
Jerainne Johnson
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Speed ◽  
Microcontact Printing ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Aspect Ratios ◽  
Polymer Dispersed Liquid Crystals ◽  
Polymer Dispersed ◽  
Ambipolar Transport

Organic semiconductors are of continued interest for low-cost display drivers and logic elements. Field-effect transistors (FETs) with organic semiconductor channels have been fabricated in arrays to drive electrophoretic display pixels[1] and polymer dispersed liquid crystals (http://www.research.philips.com/pressmedia/releases/000901a.html). Complementary logic elements and shift registers containing hundreds of organic-based FETs have been produced[2], and high-speed organic circuits have been fabricated on polyester substrates.[3] The source and drain electrodes of individual FETs have been patterned using microcontact printing and inkjet methods[4] to give extraordinary aspect ratios. Inorganic[5] and hybrid[6] materials have been deposited as FET semiconductors using the methods of “organic electronics”. Organic FET channels have been harnessed to demonstrate ambipolar transport[7], chemical sensitivity[8], superconductivity[9], and electrically pumped lasers[10].

scholarly journals Photoresponse Dimensionality of Organic Field-Effect Transistor

Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7465
Author(s):  
Tomas Vincze ◽  
Michal Micjan ◽  
Juraj Nevrela ◽  
Martin Donoval ◽  
Martin Weis
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Copper Phthalocyanine ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Flexible Substrates ◽  
Organic Field Effect Transistors ◽  
Effect Transistor ◽  
Absorption Characteristics

Organic field-effect transistors have been envisioned for advanced photodetectors because the organic semiconductors provide unique absorption characteristics, low-cost fabrication, or compatibility with flexible substrates. However, the response time of organic phototransistors still does not reach the required application level. Here, we report the photoresponse of copper phthalocyanine phototransistor in a steady state and under pulsed illumination. The detailed analysis based on the random walk among a field of traps was used to evaluate the dimensionality of electron transport in a device.

Three-dimensional Organic Field-effect Transistors on Plastic Substrates: Flexible Transistors with Very High Output Current

2009 ◽  
Vol 1197 ◽  
Author(s):  
Jun Takeya ◽  
M. Uno ◽  
Kengo Nakayama
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Three Dimensional ◽  
Organic Transistors ◽  
Organic Field Effect Transistors ◽  
Output Current ◽  
Light Emitting ◽  
Plastic Substrates

AbstractAttractiveness of organic field-effect transistors are in their low-cost and easy fabrication processes as well as their mechanical flexibility, while a significant drawback has been their poorer transistor performances than those of silicon and oxide semiconductors because of lower carrier mobility in organic semiconductors. We have developed an easy MEMS-based process to fabricate three-dimensional organic transistors with metal-insulator-semiconductor structures of multiple vertical channels on plastic platforms. The design maximizes the space availability and the output current per area. The flexible three-dimensional organic transistors indeed present outstanding current of ∼ 0.5 A/cm2, which is more than sufficient for driving pixels of typical organic light-emitting diodes. High on-off ratio up to 107 is also demonstrated.

AlGaN/GaN HEMTs: RECENT DEVELOPMENTS AND FUTURE DIRECTIONS

2008 ◽  
Vol 18 (04) ◽  
pp. 913-922 ◽  
Author(s):  
SIDDHARTH RAJAN ◽  
UMESH K. MISHRA ◽  
TOMÁS PALACIOS
Keyword(s):  
Field Effect ◽  
High Speed ◽  
Digital Circuits ◽  
Field Effect Transistors ◽  
Rf Power ◽  
Power Performance ◽  
Future Directions ◽  
Recent Developments ◽  
Gan Hemts ◽  
State Of Art

This paper provides an overview of recent work and future directions in Gallium Nitride transistor research. We discuss the present status of Ga -polar AlGaN / GaN HEMTs and the innovations that have led to record RF power performance. We describe the development of N -polar AlGaN / GaN HEMTs with microwave power performance comparable with state-of-art Ga -polar AlGaN / GaN HEMTs. Finally we will discuss how GaN -based field effect transistors could be promising for a less obvious application: low-power high-speed digital circuits.

On Razors Edge: Influence of the Source Insulator Edge on the Charge Transport of Vertical Organic Field Effect Transistors

MRS Advances ◽  
2017 ◽  
Vol 2 (23) ◽  
pp. 1249-1257 ◽  
Author(s):  
F. Michael Sawatzki ◽  
Alrun A. Hauke ◽  
Duy Hai Doan ◽  
Peter Formanek ◽  
Daniel Kasemann ◽  
...  
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Organic Solar Cells ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Electrical Power ◽  
Strong Impact ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

ABSTRACTTo benefit from the many advantages of organic semiconductors like flexibility, transparency, and small thickness, electronic devices should be entirely made from organic materials. This means, additionally to organic LEDs, organic solar cells, and organic sensors, we need organic transistors to amplify, process, and control signals and electrical power. The standard lateral organic field effect transistor (OFET) does not offer the necessary performance for many of these applications. One promising candidate for solving this problem is the vertical organic field effect transistor (VOFET). In addition to the altered structure of the electrodes, the VOFET has one additional part compared to the OFET – the source-insulator. However, the influence of the used material, the size, and geometry of this insulator on the behavior of the transistor has not yet been examined. We investigate key-parameters of the VOFET with different source insulator materials and geometries. We also present transmission electron microscopy (TEM) images of the edge area. Additionally, we investigate the charge transport in such devices using drift-diffusion simulations and the concept of a vertical organic light emitting transistor (VOLET). The VOLET is a VOFET with an embedded OLED. It allows the tracking of the local current density by measuring the light intensity distribution.We show that the insulator material and thickness only have a small influence on the performance, while there is a strong impact by the insulator geometry – mainly the overlap of the insulator into the channel. By tuning this overlap, on/off-ratios of 9x105 without contact doping are possible.

Tailoring crystal polymorphs of organic semiconductors towards high-performance field-effect transistors

2016 ◽  
Vol 27 (8) ◽  
pp. 1330-1338 ◽  
Author(s):  
Yong-Gang Zhen ◽  
Huan-Li Dong ◽  
Lang Jiang ◽  
Wen-Ping Hu
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

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