On the Role of the Underlying Microstructure on the Mechanical Properties of Microelectromechanical Systems (MEMS) Materials

2000 ◽  
Vol 657 ◽  
Author(s):  
G. F. Dirras ◽  
G. Coles ◽  
A. J. Wagner ◽  
S. Carlo ◽  
C. Newman ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Mechanical Properties ◽  
Microelectromechanical Systems ◽  
Chemical Vapor ◽  
Xrd Analysis ◽  
Transmission Electron ◽  
Columnar Grains ◽  
Pressure Chemical ◽  
20 Nm

ABSTRACTThe microstructure of Low Pressure Chemical Vapor Deposition (LPCVD) Polycrystalline silicon (Polysilicon) thin films was investigated by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), atomic force microscopy (AFM) and Auger electron spectroscopy (AES). SEM characterization of tensile tested samples showed a brittle like-rupture, along with grooves located at the surface sides of the sample. TEM investigations of as-deposited samples showed equiaxed or fully columnar grains bridging from the bottom to the top of the films. A microstructural coarsening was observed with annealing. In the as-deposited state, the films exhibited a {110} texture as showed by the XRD analysis. The films' top and bottom surfaces were observed to be smooth with a roughness (standard deviation) of about 11nm and 20 nm respectively. A chemical analysis of the thin films showed the presence of carbon and oxygen impurities on the surface and oxygen through the sample as observed in the depth profile. The hypothetical influence of these findings is subsequently discussed in relation to the measured mechanical properties.

scholarly journals Structure and Mechanical Properties of PVD and CVD TiAlSiN Coatings Deposited on Cemented Carbide

Crystals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 598
Author(s):  
Liying Wu ◽  
Lianchang Qiu ◽  
Yong Du ◽  
Fangfang Zeng ◽  
Qiang Lu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Mechanical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Energy Dispersive Spectrometer ◽  
Chemical Vapor ◽  
Cemented Carbide ◽  
Transmission Electron ◽  
Pressure Chemical

This work reports the results of our investigation of the structure and mechanical properties of physical vapor deposition (PVD) and chemical vapor deposition (CVD) TiAlSiN coatings deposited on cemented carbide substrates. For the first time, a novel nanocomposite of Ti0.13Al0.85Si0.02N coating deposited from TiCl4-AlCl3-SiCl4-NH3-H2 gas precursors was prepared by low pressure chemical vapor deposition (LPCVD) at 780 °C and a pressure of 60 mbar, while PVD Ti0.31Al0.60Si0.09N coating was prepared using the arc ion plating method. The investigation results including morphology, microstructure, chemical composition, phase component, and hardness were carried out by scanning electron microscopy (SEM) equipped with energy dispersive spectrometer (EDS), transmission electron microscopy (TEM), X-ray diffraction (XRD), and nano-indentator. TEM results revealed that both PVD and CVD TiAlSiN coatings consisted of nanocrystalline embedded in SiNx amorphous. The nanohardness of CVD Ti0.13Al0.85Si0.02N coating obtained in this work was 31.7 ± 1.4 GPa, which was 35% higher than that of the PVD Ti0.31Al0.60Si0.09N coating.

Characterization of Highly Textured PZT Thin Films Grown on LaNiO3 Coated Si Substrates by MOCVD

1997 ◽  
Vol 493 ◽  
Author(s):  
C. H. Lin ◽  
B. M. Yen ◽  
Haydn Chen ◽  
T. B. Wu ◽  
H. C. Kuo ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Fatigue Behavior ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Preferential Orientation ◽  
Organic Chemical ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTHighly textured PbZrxTi1−xO3 (PZT) thin films with x= 0-0.6 were grown on LaNiO3 coated Si substrates at 600 °C by metal-organic chemical vapor deposition (MOCVD). The preferred crystalline orientation of PZT thin films with various Zr concentration were characterized by X-ray diffraction (XRD). Microstructures were studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The dielectric constants, hysteresis and fatigue behavior of these thin films were also measured. The relationship between growth rate and the preferential orientation is discussed. Furthermore, the dependence of the electrical properties on Zr concentration and preferential orientation is demonstrated.

THE DEPOSITION AND CONTROL OF SELF ASSEMBLED SILICON NANO ISLANDS ON CRYSTALLINE SILICON

2008 ◽  
Vol 18 (04) ◽  
pp. 901-910
Author(s):  
RAGNAR KIEBACH ◽  
ZHENRUI YU ◽  
MARIANO ACEVES-MIJARES ◽  
DONGCAI BIAN ◽  
JINHUI DU
Keyword(s):  
Electron Microscopy ◽  
Integrated Circuit ◽  
Crystalline Silicon ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
High Density ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
And Control ◽  
Circuit Technology

The formation of nano sized Si structures during the annealing of silicon rich oxide (SRO) films was investigated. These films were synthesized by low pressure chemical vapor deposition (LPCVD) and used as precursors, a post-deposition thermal annealing leads to the formation of Si nano crystals in the SiO 2 matrix and Si nano islands ( Si nI ) at c-Si /SRO interface. The influences of the excess Si concentration, the incorporation of N in the SRO precursors, and the presence of a Si concentration gradient on the Si nI formation were studied. Additionally the influence of pre-deposition substrate surface treatments on the island formation was investigated. Therefore, the substrate surface was mechanical scratched, producing high density of net-like scratches on the surface. Scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM) were used to characterize the synthesized nano islands. Results show that above mentioned parameters have significant influences on the Si nIs . High density nanosized Si islands can epitaxially grow from the c-Si substrate. The reported method is very simple and completely compatible with Si integrated circuit technology.

Mechanisms of misfit strain relaxation in epitaxially grown BLT (Bi4-xLaxTi3O12, x = 0.75) thin films

2003 ◽  
Vol 779 ◽  
Author(s):  
Hyung Seok Kim ◽  
Sang Ho Oh ◽  
Ju Hyung Suh ◽  
Chan Gyung Park
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Strain Relaxation ◽  
Lattice Misfit ◽  
Misfit Strain ◽  
Misfit Dislocations ◽  
Transmission Electron ◽  
Means Of Transmission ◽  
20 Nm

AbstractMechanisms of misfit strain relaxation in epitaxially grown Bi4-xLaxTi3O12 (BLT) thin films deposited on SrTiO3 (STO) and LaAlO3 (LAO) substrates have been investigated by means of transmission electron microscopy (TEM). The misfit strain of 20 nm thick BLT films grown on STO substrate was relaxed by forming misfit dislocations at the interface. However, cracks were observed in 100 nm thick BLT films grown on the same STO. It was confirmed that cracks were formed because of high misfit strain accumulated with increasing the thickness of BLT, that was not sufficiently relaxed by misfit dislocations. In the case of the BLT film grown on LAO substrate, the magnitude of lattice misfit between BLT and LAO was very small (~1/10) in comparison with the case of the BLT grown on STO. The relatively small misfit strain formed in layered structure of the BLT films on LAO, therefore, was easily relaxed by distorting the film, rather than forming misfit dislocations or cracks, resulting in misorientation regions in the BLT film.

Comparison of Aluminum Nitride Nanowire Growth with and without Catalysts via Chemical Vapor Deposition

2011 ◽  
Vol 1324 ◽  
Author(s):  
Kasif Teker ◽  
Joseph A. Oxenham
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Systematic Investigation ◽  
Efficient Catalyst ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Direct Nitridation ◽  
20 Nm

ABSTRACTThis paper presents a systematic investigation of AlN nanowire synthesis by chemical vapor deposition using Al and NH3 on SiO2/Si substrate and direct nitridation of mixture of Al-Al2O3 by NH3. A wide variety of catalyst materials, in both discrete nanoparticle and thin film forms, have been used (Co, Au, Ni, and Fe). The growth runs have been carried out at temperatures between 800 and 1100oC mainly under H2 as carrier gas. It was found that the most efficient catalyst in terms of nanowire formation yield was 20-nm Ni film. The AlN nanowire diameters are about 20-30 nm, about the same thickness as the Ni-film. Further studies of direct nitridation of mixture of Al-Al2O3 by NH3 have resulted in high density one-dimensional nanostructure networks at 1100oC. It was observed that catalyst-free nanostructures resulted from the direct nitridation were significantly longer than that with catalysts. The analysis of the grown nanowires has been carried out by scanning electron microscopy, transmission electron microscopy, atomic force microscopy, and x-ray diffraction.

Intra- and Intergranular Fracture of Diamond Thin Films

1989 ◽  
Vol 162 ◽  
Author(s):  
H. A. Hoff ◽  
A. A. Morrish ◽  
W. A. Carrington ◽  
J. E. Butler ◽  
B. B. Rath
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Relative Strength ◽  
Ambient Atmosphere ◽  
Transmission Electron ◽  
Welding Torch ◽  
Diamond Thin Films ◽  
Inherent Strength

ABSTRACTDiamond thin films have been synthesized at low pressures by chemical vapor deposition (CVD) and, recently, at ambient atmosphere with an oxygen-acetylene welding torch. By the application of appropriate thermal or mechanical stresses to the substrate, the diamond films can be delaminated. The delaminated films which are only a few microns thick have been fractured by manual bending. Scanning electron microscopy (SEM) examination of fractured CVD diamond films shows the presence of primarily intragranular fracture attesting to the inherent strength of the films. Using transmission electron microscopy (TEM), twinning and stacking faults are seen within the crystallites of the films along the fracture surfaces. By combining SEM and TEM examination, the relative degree of intragranular fracture found in films synthesized by both CVD and oxygen-acetylene torch has been investigated. Possible mechanisms for the intragranular fracture and the relative strength of such films are discussed.

Fabrication of Nanotwinned Surface on a Nickel Alloy Using a Developed Diamond Panel with Tips Array

2016 ◽  
Vol 874 ◽  
pp. 3-8
Author(s):  
Bo Wang ◽  
Zhen Yu Zhang ◽  
Neng Dong Duan ◽  
Ji Lei Lyu ◽  
Guo Xin Chen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Nickel Alloy ◽  
Vapor Deposition ◽  
Material Removal ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Chemical Reagents ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
High Temperature High Pressure

In this study, nanotwinned surface is fabricated on a Nickel alloy by means of a developed diamond panel with tips array. The diamond panel has an area of 10×10 mm2, and is grown using microwave chemical vapor deposition. The diamond tips are submicron in radius and formed on a silicon substrate with an array full of uniformed inverted pyramid pits. The nanotwinned surface is produced under the pressure of 1 MPa exerted by the diamond panel with tips array. Nanotwins are confirmed using transmission electron microscopy. The nanotwinned surface is generated by indention of diamond panel at room temperature using mechanical force, neither material removal nor chemical reagents. This is different from previous reports, in which high temperature, high pressure, chemical reagents or vacuum conditions are employed usually.

SiGe Nanowires Grown by LPCVD: Morphological and Structural Analysis

2010 ◽  
Vol 1258 ◽  
Author(s):  
Andrés Rodríguez ◽  
Jesús Sangrador ◽  
Tomás Rodríguez ◽  
Carmen Ballesteros ◽  
Carmelo Prieto ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Liquid Solid ◽  
Chemical Vapor Deposition Reactor ◽  
X Ray ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
Scanning Electron

AbstractSiGe nanowires were grown by the vapor-liquid-solid method using a low pressure chemical vapor deposition reactor and different flows of the GeH4 and Si2H6 gas precursors. The morphology of the nanowires was studied by field emission scanning electron microscopy, and the length, diameter and density of nanowires were determined. Their structure and crystallinity were analyzed by transmission electron microscopy and its related techniques. Energy dispersive X-ray emission of individual nanowires as well a Raman spectroscopy were used to determine their composition and to analyze its homogeneity.

Sub-Micrometer Spatially Resolved Measurements of Mechanical Properties and Correlation to Microstructure and Composition

2000 ◽  
Vol 649 ◽  
Author(s):  
M. Kunert ◽  
B. Baretzky ◽  
S. P. Baker ◽  
E. J. Mittemeijer
Keyword(s):  
Electron Microscopy ◽  
Mechanical Properties ◽  
Transmission Electron Microscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Measurement Techniques ◽  
Spatially Resolved ◽  
Transmission Electron ◽  
20 Nm ◽  
Almost Continuous

ABSTRACTThe variations of hardness, composition, and microstructure within a carbon implanted region – about 350 nm thick – of a Ti-6Al-4V alloy were measured using nanoindentation, Auger electron spectroscopy and transmission electron microscopy, respectively. Correlations among hardness, composition, and microstructure were made with a spatial resolution of about ±20 nm. The variation in hardness within the implanted regions was quantitatively explained as due to the formation of an almost continuous TiC layer and precipitate hardening. The problems that may arise in measuring and correlating spatial variations in such a complex material on this scale are outlined and a successful method to solve them is proposed. The need for highly spatially resolved measurement techniques is emphasized.

scholarly journals Structural Property Study for GeSn Thin Films

Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3645
Author(s):  
Liyao Zhang ◽  
Yuxin Song ◽  
Nils von den Driesch ◽  
Zhenpu Zhang ◽  
Dan Buca ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy. Two-dimensional reciprocal space maps around the asymmetric (224) reflection were collected by X-ray diffraction for both the whole structures and the GeSn epilayers. The broadenings of the features of the GeSn epilayers with different relaxations in the ω direction, along the ω-2θ direction and parallel to the surface were investigated. The dislocations were identified by transmission electron microscopy. Threading dislocations were found in MBE grown GeSn layers, but not in the CVD grown ones. The point defects and dislocations were two possible reasons for the poor optical properties in the GeSn alloys grown by MBE.

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