Quantum Transport Through Intermolecular Nanotube Junctions

2000 ◽  
Vol 633 ◽  
Author(s):  
Alper Buldum ◽  
Jian Ping Lu
Keyword(s):  
Contact Resistance ◽  
Quantum Transport ◽  
Negative Differential Resistance ◽  
Significant Variation ◽  
Contact Region ◽  
Differential Resistance ◽  
Pressure Force ◽  
New Device ◽  
Device Applications ◽  
Nanotube Chirality

AbstractQuantum transport properties of intermolecular nanotube contacts are investigated. We find that atomic structure in the contact region plays important roles and resistance of contacts varies strongly with geometry and nanotube chirality. Nanotube end-end contacts have low resistance and show negative differential resistance (NDR) behavior. Exerting small pressure/force between the tubes can dramatically decrease contact resistance, if the contact is commensurate. Significant variation and nonlinearity of contact resistance may lead to new device applications.

Perfect spin-filter, spin-valve, switching and negative differential resistance in an organic molecular device with graphene leads

RSC Advances ◽  
2014 ◽  
Vol 4 (36) ◽  
pp. 18522-18528 ◽  
Author(s):  
Yun Ni ◽  
Kai-lun Yao ◽  
Chao-qun Tang ◽  
Guo-ying Gao ◽  
Hua-hua Fu ◽  
...  
Keyword(s):  
Quantum Transport ◽  
Negative Differential Resistance ◽  
Spin Valve ◽  
Differential Resistance ◽  
First Principle ◽  
Molecular Device ◽  
Spin Filter ◽  
Multiple Effect ◽  
Valve Switching

A multiple-effect organic molecular device for spintronics is proposed by performing first-principle quantum transport calculations.

Tuning the electronic and quantum transport properties of nitrogenated holey graphene nanoribbons

2017 ◽  
Vol 5 (45) ◽  
pp. 11856-11866 ◽  
Author(s):  
Aldilene Saraiva-Souza ◽  
Manuel Smeu ◽  
José Gadelha da Silva Filho ◽  
Eduardo Costa Girão ◽  
Hong Guo
Keyword(s):  
Transport Properties ◽  
Quantum Transport ◽  
Negative Differential Resistance ◽  
Graphene Nanoribbons ◽  
Differential Resistance ◽  
Linear Current ◽  
Current Voltage ◽  
Non Linear ◽  
Current Voltage Characteristics ◽  
Peak To Valley Ratio

Strong negative differential resistance (NDR) behavior with a remarkable current peak-to-valley ratio for armchair C2N-hNRs and non-linear current–voltage characteristics for zigzag C2N-hNRs.

Negative differential resistance, perfect spin-filtering effect and tunnel magnetoresistance in vanadium-doped zigzag blue phosphorus nanoribbons

2018 ◽  
Vol 20 (32) ◽  
pp. 21105-21112 ◽  
Author(s):  
Si-Cong Zhu ◽  
Shun-Jin Peng ◽  
Kai-Ming Wu ◽  
Cho-Tung Yip ◽  
Kai-Lun Yao ◽  
...  
Keyword(s):  
Transport Properties ◽  
Quantum Transport ◽  
First Principles ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Tunnel Magnetoresistance ◽  
Filtering Effect ◽  
Spin Filtering

We investigate the electronic and transport properties of vanadium-doped zigzag blue phosphorus nanoribbons by first-principles quantum transport calculations.

Compositional Tuning of Negative Differential Resistance in Bulk Silver Iodide Memristor

2020 ◽  
Author(s):  
SMITA GAJANAN NAIK ◽  
Mohammad Hussain Kasim Rabinal
Keyword(s):  
Power Consumption ◽  
Negative Differential Resistance ◽  
Silver Iodide ◽  
Differential Resistance ◽  
Fast Response ◽  
Low Power Consumption ◽  
Switching Effect ◽  
Memory Switching ◽  
Bulk Silver ◽  
Emerging Memory

Electrical memory switching effect has received a great interest to develop emerging memory technology such as memristors. The high density, fast response, multi-bit storage and low power consumption are their...

Experimental Studies of New GaAs Metal/Insulator/p-n+Switches Using Low Temperature Oxide

2002 ◽  
Vol 25 (3) ◽  
pp. 233-237
Author(s):  
K. F. Yarn
Keyword(s):  
Low Temperature ◽  
Negative Differential Resistance ◽  
Doping Concentration ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Switching Behavior ◽  
Metal Insulator ◽  
Turn On ◽  
Temperature Oxide ◽  
Phase Chemical

First observation of switching behavior is reported in GaAs metal-insulator-p-n+structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface andp-n+junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to105has been obtained.

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