Transport Anisotropy in PLD-Made La0.75Sr0.25MnO3 Films

2000 ◽  
Vol 623 ◽  
Author(s):  
P. Johnsson ◽  
S.I. Khartsev ◽  
A.M. Grishin
Keyword(s):  
Electrical Resistivity ◽  
Low Temperature ◽  
Thick Films ◽  
Anisotropy Parameter ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Maximum Temperature ◽  
Strong Anisotropy ◽  
Maximum Value ◽  
Temperature Coefficient Of Resistivity

AbstractA sequence of epitaxial La0.75Sr0.25MnO3 (LSMO) films with thickness ranging from 2400 to 50 Å have been prepared by pulsed laser deposition onto (110) SrTiO3 (STO) substrates. Compared with oar previous results on LSMO/STO(100) films [1], films on STO(110) substrates exhibit strong, anisotropy of electrical resistivity p. p measured in [110] direction is comparable with the resistivity of LSMO/STO(100) films while p in [001] direction is 25 times higher than in STO(100) case. The maximum value of anisotropy parameter p[001]/p[110] = 25 is reached for thick films at the low temperature of 90 K. Distinct crossover from 3D to 2D case has been observed. For thick films anisotropy monotonously decreases with the temperature increase. Films thinner than 200 Å exhibit a maximum of anisotropy parameter, which shifts to lower temperatures with the thickness decrease. The maximum temperature coefficient of resistivity (TCR) was found to be around 2% if measured along [001] direction and about 50 % higher in [11O] inplane direction. We explain the observed effects in terms of the crystalline properties of fabricated films.

Comparison of Sol-Gel Derived and Pulsed Laser Deposited Epitaxial La0.67Ca0.33MnO3 Films for IR Bolometer

2004 ◽  
Vol 811 ◽  
Author(s):  
Rickard Fors ◽  
Annika Pohl ◽  
Sergey Khartsev ◽  
Alexander Grishin ◽  
Gunnar Westin
Keyword(s):  
Colossal Magnetoresistance ◽  
Sol Gel ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Maximum Temperature ◽  
Post Annealing ◽  
Out Of Plane ◽  
Temperature Coefficient Of Resistivity ◽  
Gel Technique ◽  
Sol Gel Films

ABSTRACTEpitaxial La0.67Ca0.33MnO3 films have been prepared on LaAlO3 crystals by pulsed laser deposition (PLD) and by a novel all-alkoxide sol-gel technique. Different out-of-plane lattice parameters are found for the as-prepared films, and scanning electron microscopy shows a more porous structure for sol-gel films as compared to PLD films. These differences are largely removed by post-annealing at 1000 °C. Transport measurements show maximum temperature coefficient of resistivity of 8.2 % K−1 at 258 K (PLD) and 6.1 % K−1 at 241 K (sol-gel) and colossal magnetoresistance at 7 kOe of 35 % at 263 K (PLD) and 32 % at 246 K (sol-gel).

Epitaxial Growth of AlN Thin Films on Silicon and Sapphire by Pulsed Laser Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
R.D. Vispute ◽  
H. Wu ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Breakdown Field ◽  
Transmission Electron ◽  
Uv Visible ◽  
Relationship Of

ABSTRACTAIN thin films have been grown epitaxially on Si(111) and Al2O3(0001) substrates by pulsed laser deposition. These films were characterized by FTIR and UV-Visible, x-ray diffraction, high resolution transmission electron and scanning electron microscopy, and electrical resistivity. The films deposited on silicon and sapphire at 750-800°C and laser energy density of ∼ 2 to 3J/cm2 are epitaxial with an orientational relationship of AIN[0001]║ Si[111], AIN[2 110]║Si[011] and AlN[0001]║Al2O3[0001], AIN[1 2 1 0]║ Al2O3[0110] and AIN[1010] ║ Al2O3[2110]. The both AIN/Si and AIN/Al2O3 interfaces were found to be quite sharp without any indication of interfacial reactions. The absorption edge measured by UV-Visible spectroscopy for the epitaxial AIN film grown on sapphire was sharp and the band gap was found to be 6.1eV. The electrical resistivity of the films was about 5-6×l013Ω-cm with a breakdown field of 5×106V/cm. We also found that the films deposited at higher laser energy densities ≥10J/cm2 and lower temperatures ≤650°C were nitrogen deficient and containing free metallic aluminum which degrade the microstructural, electrical and optical properties of the AIN films

Effect of oxygen pressure performance of PZO thin films deposited by pulsed laser deposition at low temperature

2017 ◽  
Vol 727 ◽  
pp. 1273-1279 ◽  
Author(s):  
Shihui Yu ◽  
Binhui Zhu ◽  
Haoran Zheng ◽  
Lingxia Li ◽  
Siliang Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Effect Of Oxygen

Low-temperature fabrication of superconducting FeSe thin films by pulsed laser deposition

2010 ◽  
Vol 519 (5) ◽  
pp. 1540-1545 ◽  
Author(s):  
Ta-Kun Chen ◽  
Jiu-Yong Luo ◽  
Chung-Ting Ke ◽  
Hsian-Hong Chang ◽  
Tzu-Wen Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

In situ monitoring of electrical resistivity and plasma during pulsed laser deposition growth of ultra-thin silver films

2021 ◽  
Vol 130 (8) ◽  
pp. 085301
Author(s):  
M. Novotný ◽  
P. Fitl ◽  
S. A. Irimiciuc ◽  
J. Bulíř ◽  
J. More-Chevalier ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
In Situ Monitoring ◽  
Laser Deposition ◽  
Silver Films

scholarly journals High performance FeSe0.5Te0.5thin films grown at low temperature by pulsed laser deposition

2015 ◽  
Vol 28 (6) ◽  
pp. 065009 ◽  
Author(s):  
Pusheng Yuan ◽  
Zhongtang Xu ◽  
Haitao Zhang ◽  
Dongliang Wang ◽  
Yanwei Ma ◽  
...  
Keyword(s):  
Low Temperature ◽  
Pulsed Laser Deposition ◽  
High Performance ◽  
Pulsed Laser ◽  
Laser Deposition
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