Cracking and Delamination of Heteroepitaxial Barium Hexaferrite Films

2000 ◽  
Vol 619 ◽  
Author(s):  
S.A. Oliver ◽  
I. Kozulin ◽  
N.E. Mcgruer ◽  
S.D. Yoon ◽  
C. Vittoria
Keyword(s):  
Film Thickness ◽  
Lattice Constant ◽  
Barium Hexaferrite ◽  
Experimental Results ◽  
Growth Pressure ◽  
Curvature Measurements ◽  
Substrate Curvature ◽  
Stress Behaviors

ABSTRACTExperimental results are shown for the structural and stress behaviors of c-axis oriented barium hexaferrite films on c-plane sapphire (Al2O3) substrates as a function of oxygen growth pressure and film thickness. It is shown that films deposited at 20 mTorr crack and delaminate at thicknesses above 15 µm, but that evidence for these large stresses is not apparent in either substrate curvature measurements or distortion of the c-axis lattice constant for thinner films (< 2 µm). In contrast, films (< 4 µm) deposited at 300 mTorr show large substrate curvatures that relax with increasing film thickness, in tandem with the formation of first large outgrowths, and then polycrystalline grains as the original c-axis film texture is randomized. Correlations between these observations are made to explain the complex evolution of properties in these films.

Plastic properties of thin films on substrates as measured by submicron indentation hardness and substrate curvature techniques

1986 ◽  
Vol 1 (6) ◽  
pp. 845-851 ◽  
Author(s):  
M.F. Doerner ◽  
D.S. Gardner ◽  
W.D. Nix
Keyword(s):  
Thin Films ◽  
Plastic Deformation ◽  
Film Thickness ◽  
Indentation Hardness ◽  
Silicon Substrates ◽  
Strengthening Effect ◽  
Plastic Properties ◽  
Aluminum Films ◽  
Curvature Measurements ◽  
Substrate Curvature

Substrate curvature and submicron indentation measurements have been used recently to study plastic deformation in thin films on substrates. In the present work both of these techniques have been employed to study the strength of aluminum and tungsten thin films on silicon substrates. In the case of aluminum films on silicon substrates, the film strength is found to increase with decreasing thickness. Grain size variations with film thickness do not account for the variations in strength. Wafer curvature measurements give strengths higher than those predicted from hardness measurements suggesting the substrate plays a role in strengthening the film. The observed strengthening effect with decreased thickness may be due to image forces on dislocations in the film due to the elastically stiffer silicon substrate. For sputtered tungsten films, where the substrate is less stiff than the film, the film strength decreases with decreasing film thickness.

Theoretical and experimental studies of the oil film in lubricated point contact

1966 ◽  
Vol 291 (1427) ◽  
pp. 520-536 ◽  
Keyword(s):  
Surface Layer ◽  
Film Thickness ◽  
Strong Evidence ◽  
Experimental Studies ◽  
Point Contact ◽  
Elastohydrodynamic Lubrication ◽  
Experimental Results ◽  
Point Contacts ◽  
Previous Theory ◽  
Oil Film

A technique using Newton’s rings for mapping the oil film of lubricated point contacts is described. A theoretical value for the film thickness of such contacts in elastohydrodynamic lubrication is derived. The experimental results give the exit constriction predicted by previous theory but never shown in detail. The comparison of theoretical and experimental oil film thicknesses, which is satisfactorily accurate, gives strong evidence for a viscous surface layer some 1000Å thick. This film agrees with the known ‘lubricating power’ of the various oils tested.

Structural and magnetic study of the Ti4+-doped barium hexaferrite ceramic samples: Theoretical and experimental results

2011 ◽  
Vol 406 (17) ◽  
pp. 3130-3136 ◽  
Author(s):  
P.A. Mariño-Castellanos ◽  
A.C. Moreno-Borges ◽  
G. Orozco-Melgar ◽  
J.A. García ◽  
E. Govea-Alcaide
Keyword(s):  
Barium Hexaferrite ◽  
Experimental Results ◽  
Magnetic Study ◽  
Ceramic Samples

The Improvement of the Micro Torsional Mirror by a Reinforced Folded Frame

2000 ◽  
Author(s):  
Hung-Yi Lin ◽  
Weileun Fang
Keyword(s):  
Thin Film ◽  
Residual Stresses ◽  
Film Thickness ◽  
Experimental Results ◽  
Dynamic Loads ◽  
Inertia Force ◽  
Optical Performance ◽  
Thin Film Thickness ◽  
Static Loads ◽  
Dynamic Inertia

Abstract Stiffness of micromachined structures is limited by thin film thickness. Hence, static loads such as thin film residual stresses, or dynamic loads such as the inertia force could significantly deform the thinness micromachined torsional mirror. This work aims to stiffen the thin film micromachinined torsional mirror. The proposed torsional mirror exploits a reinforced frame to improve the stiffness of the mirror plate. Consequently, the mirror plate has less deformation no matter subject to the residual stresses or to the dynamic inertia force. In addition the reinforced frame stiffen the mirror without increasing the mass significantly. In application of this technique, the micro torsional mirror was fabricated through the integration of DRIE, conventional bulk and surface micromachining processes. The experimental results demonstrated that the proposed design significantly improves the flatness of the mirror plate in both static and dynamic conditions. Consequently, the optical performance of the micro torsional mirror was improved.

An Interpolation Procedure for the Minimum Film Thickness in Point Contacts

1990 ◽  
Vol 204 (3) ◽  
pp. 199-206 ◽  
Author(s):  
C J Hooke
Keyword(s):  
Film Thickness ◽  
Contact Geometry ◽  
High Accuracy ◽  
Operating Conditions ◽  
Experimental Results ◽  
Point Contacts ◽  
Design Charts ◽  
Minimum Film Thickness ◽  
Interpolation Procedure

Most engineering point contacts operate in, or close to, the elastic piezoviscous regime. A general interpolation procedure is presented by which the minimum film thickness in any such contact may be estimated. This procedure matches all existing numerical and experimental results with high accuracy. Design charts are provided and these enable the minimum film thickness to be read directly and also allow the effect of changes in contact geometry and operating conditions to be assessed.

Misfit Strain Relief Beyond the Critical Thickness Using Curvature Measurements and in Situ Characterization of the Magneto-Optic Kerr Effect

1994 ◽  
Vol 356 ◽  
Author(s):  
H. E. Inglefield ◽  
G. Bochi ◽  
C. A. Ballentine ◽  
R. C. O’Handley ◽  
C. V. Thompson
Keyword(s):  
Film Thickness ◽  
Magnetic Anisotropy ◽  
Kerr Effect ◽  
Critical Thickness ◽  
Misfit Strain ◽  
Misfit Dislocations ◽  
Wafer Curvature ◽  
Curvature Measurements ◽  
Magneto Optic

AbstractEpitaxial misfit has been characterized in Ni/Cu/Si (100) as a function of Ni film thickness using wafer curvature measurements. This strain can be related to measurements of magnetic anisotropy made in the deposition system using the magneto-optic Kerr effect. Films were deposited using molecular beam epitaxy (MBE) with varying Ni epilayer thickness between 10 and 1000Å. The change in wafer curvature due to misfit strain was measured using optical interferometry and the strain was calculated using Stoney’s equation. Transmission electron microscopy was used to characterize misfit dislocations at the Ni/Cu interface. It has been determined that misfit strain can have a very strong effect on magnetic anisotropy, particularly in the regime between the critical thickness and complete misfit accommodation, where strain has been found to decrease significantly as a function of film thickness. A critical strain has been determined at which a transition in the direction of magnetization easy axis from perpendicular to the film to in the film plane occurs. This discovery allows the use of Kerr effect measurements to characterize misfit strain in situ.

Intrinsic Stress Measurements in CVD Diamond Films

1999 ◽  
Vol 593 ◽  
Author(s):  
Jin Yu ◽  
J.G. Kim ◽  
Y. C. Sohn ◽  
Y. S. Lee
Keyword(s):  
Film Thickness ◽  
Diamond Films ◽  
Strain Analysis ◽  
Chemical Vapor ◽  
Film Stress ◽  
Intrinsic Stress ◽  
Ex Situ ◽  
Chemical Vapor Deposition Method ◽  
Si Substrate ◽  
Curvature Measurements

ABSTRACTDiamond films were grown over Si substrate at 1253K by the hot filament chemical vapor deposition method using CH4/H2 gas mixture, and intrinsic stresses in the film were deduced from the ex-situ curvature measurements. In order to account for the creep deformation of the Si substrate, an elastic/plastic stress and strain analysis were conducted. Results showed that intrinsic stresses were generally several times larger than the average film stresses and always positive increasing with the film thickness. For the film thickness larger than 10μm, stress relaxation by creep of the substrate became significant, and must be considered for the accurate assessment of the film stress in diamond. Later, an analysis based on the grain growth accounted for the development of intrinsic stresses reasonably well

Report Paper 2: Approximate Short Bearing Analysis and Experimental Results Obtained Using Plastic Bearing Liners

1969 ◽  
Vol 184 (12) ◽  
pp. 190-196 ◽  
Author(s):  
J. P. O'Donoghue ◽  
P. R. Koch ◽  
C. J. Hooke
Keyword(s):  
Approximate Solution ◽  
Film Thickness ◽  
Journal Bearings ◽  
Experimental Results ◽  
Approximate Theory ◽  
Hydrodynamic Problem ◽  
Dynamic Conditions ◽  
Oil Film ◽  
Theoretical Predictions ◽  
Bearing Analysis

This paper outlines a new approximate theory for liquid lubricated plain journal bearings with elastic liners. This is a modified form of Ocvirk's theory and includes the effect of circumferential flow. The results of a series of tests on short plastic bearings are presented to compare with the theoretical predictions of the new theory. The authors conclude that for short bearings the theory gives reasonably good predictions of performance, but the elasticity assumptions cause major errors for length/diameter ratios greater than 0·5 due to the decrease in oil film thickness that occurs near the ends of the bearing. The approximate solution adopted for the hydrodynamic problem may be of use for considering dynamic conditions taking the Reynolds conditions for cavitation.

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