Structural Investigations of (GaIn)(NAs)/GaAs Multi-Quantum-Wells by Transmission Electron Microscopy

2000 ◽  
Vol 618 ◽  
Author(s):  
K. Volz ◽  
A. Hasse ◽  
A.K. Schaper ◽  
T.E. Weiric ◽  
F. Höhnsdorf ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Phase Separation ◽  
Quantum Wells ◽  
Interface Roughness ◽  
Structural Perfection ◽  
Structural Investigations ◽  
Transmission Electron ◽  
High Structural Perfection ◽  
Metastable Material

ABSTRACTThe structure of compressively strained (GaIn)(NAs)/GaAs multi-quantum wells (MQWs) grown by MOVPE is investigated using TEM. The quaternary, metastable material exhibits a high structural perfection if a N concentration of 4% is not exceeded. Phase separation or clustering effects are not observed, and the In is dispersed homogeneously throughout the quantum wells. The interface roughness of the quantum wells to the GaAs barriers is in the order of several monolayers. Increasing the N content to above 4.5% results in a deterioration of the structure and of the homogeneity of the wells

(Zn,Mn)Te-Based Nanowires for Spintronic Applications: A TEM Study of Structural and Chemical Properties

2010 ◽  
Vol 638-642 ◽  
pp. 2154-2159 ◽  
Author(s):  
Holm Kirmse ◽  
Wolfgang Neumann ◽  
Slawomir Kret ◽  
Elzbieta Janik ◽  
Wojciech Zaleszczyk ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stacking Faults ◽  
Chemical Properties ◽  
Structural Perfection ◽  
Vapor Liquid Solid ◽  
Cover Layer ◽  
Transmission Electron ◽  
High Structural Perfection ◽  
And Chemical Properties

(Zn,Mn)Te nanowires were grown via vapor-liquid-solid mode as test structures for spintronic applications. The structural and chemical properties of the nanowires were inspected by transmission electron microscopy. The nanowires contain much less stacking faults compared to ZnTe nanowires. This high structural perfection can be attributed to a rough liquid-solid interface as found by high-resolution transmission electron microscopy. The composition of the nanowires and, in particular, the Mn distribution is homogeneous. A ZnO cover layer forms after the growth of the nanowires.

Indium segregation in (111)B GaAs-InxGa1-xAs quantum wells determined by transmission electron microscopy

2001 ◽  
Vol 34 (13) ◽  
pp. 1943-1946 ◽  
Author(s):  
M Moran ◽  
H Meidia ◽  
T Fleischmann ◽  
D J Norris ◽  
G J Rees ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Quantum Wells ◽  
Transmission Electron

Post Oxidation Anneal and Re-Oxidation Effects in 5 nm SiO2 Films

1986 ◽  
Vol 76 ◽  
Author(s):  
L. Dori ◽  
M. Arienzo ◽  
Y. C. Sun ◽  
T. N. Nguyen ◽  
J. Wetzel
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Dioxide ◽  
Oxygen Vacancies ◽  
Interface Roughness ◽  
Cross Sectional ◽  
Oxide Charge ◽  
Transmission Electron ◽  
Redistribution Of Hydrogen ◽  
Transmission Electron Microscopy Cross

ABSTRACTUltrathin silicon dioxide films, 5 nm thick, were grown in a double-walled furnace at 850°C in dry O2. A consistent improvement in the electrical properties is observed following the oxidation either with a Post-Oxidation Anneal (POA) at 1000°C in N2 or with the same POA followed by a short re-oxidation (Re-Ox) step in which 1 nm of additional oxide was grown. We attribute these results to the redistribution of hydrogen and water related groups as well as to a change in the concentration of sub-oxide charge states at the Si-SiO2 interface. A further improvement observed after the short re-oxidation step had been attributed to the filling of the oxygen vacancies produced during the POA. High resolution Transmission Electron Microscopy cross-sectional observations of the Si-iSO2 interface have evidenced an increase in the interface roughness after the thermal treatment at high temperature. These results are in agreement with recent XPS data.

Analysis of InGaN/GaN single quantum wells by X-ray scattering and transmission electron microscopy

2003 ◽  
Vol 240 (2) ◽  
pp. 297-300 ◽  
Author(s):  
T. M. Smeeton ◽  
M. J. Kappers ◽  
J. S. Barnard ◽  
M. E. Vickers ◽  
C. J. Humphreys
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Quantum Wells ◽  
Single Quantum ◽  
X Ray ◽  
X Ray Scattering ◽  
Transmission Electron ◽  
Ray Scattering
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