The Influence of Clusters on Vapor-Deposited thin Films: Atomistic Simulations

2000 ◽  
Vol 616 ◽  
Author(s):  
J. Dalla Torreg ◽  
G. H. Gilmer ◽  
F. H. Baumann ◽  
P. O'Sullivan ◽  
M. Djafari Rouhani
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Monte Carlo ◽  
Atomistic Simulations ◽  
Optimal Size ◽  
Cluster Deposition ◽  
Morphology Of Films

AbstractWe investigate the morphology of films produced by cluster deposition using Monte Carlo atomistic simulations. Thin films of aluminum are considered as an example. The deposition of small Al clusters containing up to 5 atoms is simulated. Compared with monomer beams, Al cluster deposition increases the density of 3D islands nucleated on the substrate and tends to equalize the growth rate of the different crystal facets. We discuss the smoothening of the surface when the 3D islands merge. We find that there is an optimal size of the deposited clusters that produces the smoothest film.

scholarly journals Diffusion in gadolinium doped ceria thin films: a combined Monte Carlo and molecular dynamics study

2019 ◽  
Vol 21 (19) ◽  
pp. 9802-9809
Author(s):  
John A. Purton
Keyword(s):  
Thin Films ◽  
Molecular Dynamics ◽  
Monte Carlo ◽  
Solid Oxide ◽  
Atomistic Simulations ◽  
Doped Ceria ◽  
Oxide Fuel ◽  
Oxygen Ions ◽  
Surfaces And Interfaces ◽  
Gadolinium Doped Ceria

The mobility of oxygen ions at surfaces and interfaces in solid oxide fuel materials are examined using atomistic simulations.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

An original way to elaborate cermet thin films: cluster deposition

1994 ◽  
Vol 4 (7) ◽  
pp. 991-995 ◽  
Author(s):  
J. F. Roux ◽  
M. Treilleux ◽  
B. Cabaud ◽  
G. Fuchs ◽  
C. Montandon ◽  
...  
Keyword(s):  
Thin Films ◽  
Cluster Deposition

Supercritical Fluid Deposition of Ruthenium Thin Films: A Kinetic Study

2007 ◽  
Vol 992 ◽  
Author(s):  
Christos F. Karanikas ◽  
James J. Watkins
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Deposition Temperature ◽  
Zero Order ◽  
Measurable Effect ◽  
Deposition Rates ◽  
Reaction Pressure ◽  
Deposition Kinetics ◽  
First Order ◽  
Kinetics Of

AbstractThe kinetics of the deposition of ruthenium thin films from the hydrogen assisted reduction of bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)ruthenium(II), [Ru(tmhd)2cod], in supercritical carbon dioxide was studied in order to develop a rate expression for the growth rate as well as to determine a mechanism for the process. The deposition temperature was varied from 240°C to 280°C and the apparent activation energy was 45.3 kJ/mol. Deposition rates up to 30 nm/min were attained. The deposition rate dependence on precursor concentrations between 0 and 0.2 wt. % was studied at 260°C with excess hydrogen and revealed first order deposition kinetics with respect to precursor at concentrations lower then 0.06 wt. % and zero order dependence at concentrations above 0.06 wt. %. The effect of reaction pressure on the growth rate was studied at a constant reaction temperature of 260°C and pressures between 159 bar to 200 bar and found to have no measurable effect on the growth rate.

Transition from island to layer growth of thin films: A Monte Carlo simulation

1977 ◽  
Vol 40 (1) ◽  
pp. 47-58 ◽  
Author(s):  
D. Kashchiev ◽  
J.P. van der Eerden ◽  
C. van Leeuwen
Keyword(s):  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Layer Growth
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