Improved Resolution in A P-I-N Image Sensor by Changing the Structure of the Doped Layers

2000 ◽  
Vol 609 ◽  
Author(s):  
M. Vieira ◽  
M. Fernandes ◽  
J. Martins ◽  
P. Louro ◽  
A. Maçarico ◽  
...  

ABSTRACTAn amorphous ZnO/p-i-n/Al imager that uses a small-signal scanning beam to read out the short circuit current signal is presented. An analysis of the image geometric distortion, restoration, and enhancement is performed. A simple image-processing algorithm is used to recover main features of projected images. Modifications of the transducer structure are proposed for improving the sensor performance.The effect of the doped layers and image intensity on the sensor output characteristics are analysed. Results show that a trade-off between the sensor structure and contact geometry is needed for a correct read-out. Algorithms and tools are proposed for image analysis.

2018 ◽  
Vol 924 ◽  
pp. 727-730 ◽  
Author(s):  
Hideyuki Hatta ◽  
Takaaki Tominaga ◽  
Shiro Hino ◽  
Naruhisa Miura ◽  
Shingo Tomohisa ◽  
...  

This work reports an SiC-MOSFET which replaces a part of the channel resistance with an additional embedded resistance, called a source resistance (Rs). MOSFETs with Rs have higher resistance during short circuit compared with MOSFETs without Rs and suppress short-circuit currents. An improvement of the trade-off relationship between short-circuit capability and on-resistance was obtained with MOSFETs including embedded Rs.


1994 ◽  
Vol 336 ◽  
Author(s):  
M. Hundhausen ◽  
U. Haken ◽  
L. Ley

ABSTRACTIn this paper we describe a new method for the determination of the carrier lifetime (r) and the carrier Mobilities (μn, μp) in semiconductors. This technique utilizes a moving intensity grating that is generated by superposition of frequency shifted laser beams for the illumination of the sample. The Material parameters are extracted from the short circuit current in the sample induced by the moving grating as a function of it's velocity (vgr). We solve the continuity equations and Poisson's equation in the small signal approach for the modulated electron and hole densities and show how these densities result in an electric field that in turn acts on the electrons and holes in order to yield a short circuit current density jsc. From a fit of this expression for jsc to experimental data we determine μn, μp and τ.


Nanophotonics ◽  
2016 ◽  
Vol 5 (1) ◽  
pp. 1-21 ◽  
Author(s):  
Zhiguang Zhou ◽  
Enas Sakr ◽  
Yubo Sun ◽  
Peter Bermel

Abstract Recently, there has been increasing interest in utilizing solar thermophotovoltaics (STPV) to convert sunlight into electricity, given their potential to exceed the Shockley-Queisser limit. Encouragingly, there have also been several recent demonstrations of improved system-level efficiency as high as 6.2%. In this work, we review prior work in the field, with particular emphasis on the role of several key principles in their experimental operation, performance, and reliability. In particular, for the problem of designing selective solar absorbers, we consider the trade-off between solar absorption and thermal losses, particularly radiative and convective mechanisms. For the selective thermal emitters, we consider the tradeoff between emission at critical wavelengths and parasitic losses. Then for the thermophotovoltaic (TPV) diodes, we consider the trade-off between increasing the potential short-circuit current, and maintaining a reasonable opencircuit voltage. This treatment parallels the historic development of the field, but also connects early insights with recent developments in adjacent fields.With these various components connecting in multiple ways, a system-level end-to-end modeling approach is necessary for a comprehensive understanding and appropriate improvement of STPV systems. This approach will ultimately allow researchers to design STPV systems capable of exceeding recently demonstrated efficiency values.


2011 ◽  
Vol 347-353 ◽  
pp. 1314-1317
Author(s):  
Zhi You Zhong ◽  
C.Y. Yang ◽  
J.H. Gu

Based on the analysis of the equivalent circuit model of organic photovoltaic (OPV) cells, the explicit expression of current, short-circuit current and open-circuit voltage was obtained by means of W-function, and the effects of internal resistances and diode quality factor on the output characteristics of OPV cells were studied. The results demonstrate that the series resistance can effect short-circuit current but not open-circuit voltage, and the shunt resistance and diode quality factor can influence open-circuit voltage but short-circuit current unchanged. The decrease in series resistance and the increase in shunt resistance and diode quality factor can enhance the fill factor and energy conversion efficiency of OPV cells. This conclusion is essential in preparing OPV cells and improving device performance.


2013 ◽  
Vol 133 (1) ◽  
pp. 37-44
Author(s):  
Suresh Chand Verma ◽  
Yoshiki Nakachi ◽  
Yoshihiko Wazawa ◽  
Yoko Kosaka ◽  
Takenori Kobayashi ◽  
...  

2017 ◽  
pp. 34-41
Author(s):  
Andrei V. MAIOROV ◽  
◽  
Kirill A. OSINTSEV ◽  
Andrei V. SHUNTOV ◽  
◽  
...  

2020 ◽  
Vol 16 (4) ◽  
pp. 556-567
Author(s):  
Asma Khalil ◽  
Zubair Ahmad ◽  
Farid Touati ◽  
Mohamed Masmoudi

Background: The photo-absorption and light trapping through the different layers of the organic solar cell structures are a growing concern now-a-days as it affects dramatically the overall efficiency of the cells. In fact, selecting the right material combination is a key factor in increasing the efficiency in the layers. In addition to good absorption properties, insertion of nanostructures has been proved in recent researches to affect significantly the light trapping inside the organic solar cell. All these factors are determined to expand the absorption spectrum and tailor it to a wider spectrum. Objective: The purpose of this investigation is to explore the consequence of the incorporation of the Ag nanostructures, with different sizes and structures, on the photo absorption of the organic BHJ thin films. Methods: Through a three-dimensional Maxwell solver software, Lumerical FDTD, a simulation and comparison of the optical absorption of the three famous organic materials blends poly(3- hexylthiophene): phenyl C71 butyric acid methyl ester (P3HT:PCBM), poly[N-9″-heptadecanyl-2,7- carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole)]: phenyl C71 butyric acid methyl ester (PCDTBT:PCBM) and poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b′]dithiophene)-alt- 4,7-(2,1,3-benzothiadiazole)]: phenyl C71 butyric acid methyl ester (PCDPDTBT:PCBM) has been conducted. Furthermore, FDTD simulation study of the incorporation of nanoparticles structures with different sizes, in different locations and concentrations through a bulk heterojunction organic solar cell structure has also been performed. Results: It has been demonstrated that embedding nanostructures in different locations of the cell, specifically in the active layer and the hole transporting layer had a considerable effect of widening the absorption spectrum and increasing the short circuit current. The effect of incorporation the nanostructures in the active layer has been proved to be greater than in the HTL. Furthermore, the comparison results showed that, PCDTBT:PCBM is no more advantageous over P3HT:PCBM and PCPDTBT:PCBM, and P3HT:PCBM took the lead and showed better performance in terms of absorption spectrum and short circuit current value. Conclusion: This work revealed the significant effect of size, location and concentration of the Ag nanostructures while incorporated in the organic solar cell. In fact, embedding nanostructures in the solar cell widen the absorption spectrum and increases the short circuit current, this result has been proven to be significant only when the nanostructures are inserted in the active layer following specific dimensions and structures.


2020 ◽  
Vol 89 (3) ◽  
pp. 30201 ◽  
Author(s):  
Xi Guan ◽  
Shiyu Wang ◽  
Wenxing Liu ◽  
Dashan Qin ◽  
Dayan Ban

Organic solar cells based on planar copper phthalocyanine (CuPc)/C60 heterojunction have been characterized, in which a 2 nm-thick layer of bathocuproine (BCP) is inserted into the CuPc layer. The thin layer of BCP allows hole current to tunnel it through but blocks the exciton diffusion, thereby altering the steady-state exciton profile in the CuPc zone (zone 1) sandwiched between BCP and C60. The short-circuit current density (JSC) of device is limited by the hole-exciton scattering effect at the BCP/CuPc (zone 1) interface. Based on the variation of JSC with the width of zone 1, the exciton diffusion length of CuPc is deduced to be 12.5–15 nm. The current research provides an easy and helpful method to determine the exciton diffusion lengths of organic electron donors.


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