A Study on Hysteresis Effect of Barium Strontium Titanate Thin Films for Alternative Gate Dielectric Application
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AbstractHysteresis effect of barium strontium titanate (BST) thin films for gate dielectric application has been studied. It is found that the “counterclockwise” hysteresis has strong sweep voltage and operating temperature dependence. It can be reduced or eliminated by proper thermal annealing or by using a barrier layer. A charge trapping and detrapping mechanism has been proposed.
1999 ◽
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2008 ◽
Vol 403
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pp. 2678-2683
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2015 ◽
Vol 57
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pp. 1529-1534
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2007 ◽
Vol 93
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pp. 133-140
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2010 ◽
Vol 256
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pp. 6531-6535
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2006 ◽
Vol 86
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pp. 141-148
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