Film Growth, by Seeded Supersonic Beams, of Thiophene-Based Oligomers with Controlled Optical, Structural and Morphological Properties

1999 ◽  
Vol 598 ◽  
Author(s):  
Tullio Toccoli ◽  
Maurizio Ferrari ◽  
Sabina Ronchin ◽  
Alessandro Podestà ◽  
Paolo Milani ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Molecular Beam ◽  
Film Growth ◽  
Morphological Properties ◽  
Published Data ◽  
Film Properties ◽  
High Quality ◽  
Supersonic Molecular Beam ◽  
Supersonic Beams ◽  
Novel Approach

ABSTRACTA novel approach for the deposition of high quality films of oligothiophenes has been developed. It is based on an original seeded supersonic molecular beam combined with a UHV deposition chamber. This method gives an unprecedented control on film properties. Several T4 films under different beams conditions have been prepared and characterized by optical absorption, photoluminescence and TMAFM. Morphology, structure and optical response are controlled by the beam's parameters. Highly ordered films, up to several hundreds of nm thick, show well resolved vibronic structures in low temperatures PL as only the best published data on films a few monolayers thick do.

Novel Approach for Fabrication of Single-Crystalline Insulator/Si/Insulator Nanostructures

2006 ◽  
Vol 928 ◽  
Author(s):  
Andreas Fissel ◽  
Dirk Kuehne ◽  
Eberhard Bugiel ◽  
H. Joerg Osten
Keyword(s):  
Low Temperatures ◽  
Negative Differential Resistance ◽  
Molecular Beam ◽  
Solid Phase ◽  
Differential Resistance ◽  
Solid Phase Epitaxy ◽  
Double Barrier ◽  
Single Crystalline ◽  
Novel Approach ◽  
Sharp Interfaces

ABSTRACTDouble-barrier insulator/Si/insulator nanostructures on Si(111) were prepared using molecular beam epitaxy. Ultrathin single-crystalline Si buried in a single-crystalline insulator matrix with sharp interfaces was obtained by a novel approach based on an epitaxial encapsulated solid-phase epitaxy. As an example, we demonstrate the growth of Si buried in Gd2O3 and the incorporation of epitaxial Si islands into single-crystalline Gd2O3. The I-V characteristic of the obtained nanostructures exhibited negative differential resistance at low temperatures, however, with a strong memory effect.

High quality AlGaAs layers grown by molecular beam epitaxy at low temperatures

1992 ◽  
Vol 3 (1) ◽  
pp. 11-15
Author(s):  
K. H. Chang ◽  
J. S. Wu ◽  
D. G. Liu ◽  
D. C. Liou ◽  
C. P. Lee
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam ◽  
High Quality

Stoichiometry Related Phenomena in Low Temperature Grown GaAs

1993 ◽  
Vol 325 ◽  
Author(s):  
M. Missous ◽  
S. O'Hagan
Keyword(s):  
Low Temperatures ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Time Data ◽  
High Quality ◽  
Mbe Growth ◽  
New Phenomena ◽  
First Time ◽  
Low Temperature Grown Gaas ◽  
Lt Gaas

AbstractThe growth of GaAs at low temperatures (LT-GaAs) at or below 250 °C, under standard Molecular Beam Epitaxy (MBE) growth conditions, usually results in a massive incorporation of excess As in the lattice which then totally dominates the electrical and optical characteristics of the as grown material. We report on new phenomena associated with the growth of GaAs at 250 °C and we show, for the first time, data on highly electrically active doped material. By careful control of the growth conditions, namely As4/Ga flux ratios, material in which total defect concentrations of less than 1017 cm-3, well below the huge 1020 cm-3 that is normally obtained in LT-GaAs, can be achieved thereby demonstrating that high quality GaAs can in effect be grown at extremely low temperatures.

CRYSTAL GROWTH OF OXIDE THIN FILMS USING MASS-SEPARATED LOW-ENERGY O+ ION BEAMS

1994 ◽  
Vol 08 (01n02) ◽  
pp. 183-205 ◽  
Author(s):  
RYUSUKE KITA
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Oxygen Plasma ◽  
Molecular Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Oxide Thin Films ◽  
High Quality ◽  
Mbe Growth ◽  
A New Technique

A new technique developed for growing high-quality oxide thin films by molecular beam epitaxy (MBE) is described. The technique uses low-energy and high density O + ion beams mass-separated from an oxygen plasma, as an oxidation source. Since O + ion beams have great oxidation ability and kinetic energy, the technique enables us to grow oxide films by MBE not only under ultrahigh vacuum comparable to the environment where semiconductors are prepared, but also at low temperatures. The application of the technique to the MBE growth of CuO, BaO, SrO and Sr–Cu–O thin films is also described.

Deposition of Thin SiO2 Films on Polymers as a Hard – Coating using a Microwave – ECR Plasma

1996 ◽  
Vol 430 ◽  
Author(s):  
K. Sano ◽  
H. Tamamaki ◽  
M. Nomura ◽  
S. Wickramanayaka ◽  
Y. Nakanishi ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Substrate Temperature ◽  
Low Temperatures ◽  
Film Growth ◽  
Polymer Surfaces ◽  
Hard Coating ◽  
Coating Films ◽  
High Quality ◽  
Ecr Plasma

AbstractSiO2 thin films were deposited on automobile plastics at low temperatures using a microwave activated ECR plasma. Oxygen was used as the plasma gas while tetraethoxysilane (TEOS) was used as the source gas which was introduced into the downstream. In the present investigation high quality SiO2 films were deposited on polycarbonate (PC) and polypropylene (PP) substrates with and without a mesh and the characteristics of hard coating films were studied. The film growth rate increases with the decrease of substrate temperature when a mesh is inserted into the plasma. The irregularities of polymer surfaces could be planarized by the deposition of 1.0 μm thick SiO2 film. The dynamic hardness of PC and PP are increased by the deposition of SiO2 film, however, films deposited on PP is seen to be cracked while that of on PC is crack-free.

Observation of Edge Filamentary Structure Motion during Supersonic Molecular-Beam Injection Using a Fast Camera in Heliotron J

2013 ◽  
Vol 8 (0) ◽  
pp. 1402066-1402066 ◽  
Author(s):  
Linge ZANG ◽  
Nobuhiro NISHINO ◽  
Tohru MIZUUCHI ◽  
Shinsuke OHSHIMA ◽  
Masaki TAKEUCHI ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Filamentary Structure ◽  
Supersonic Molecular Beam ◽  
Beam Injection

Green synthesis, characterization of silver sulfide nanoparticles and antibacterial activity evaluation

2019 ◽  
Author(s):  
Chem Int
Keyword(s):  
Antibacterial Activity ◽  
Large Scale ◽  
Research Work ◽  
Silver Sulfide ◽  
Morphological Properties ◽  
Effective Diameter ◽  
Novel Approach ◽  
Transmission Electron ◽  
Green Route ◽  
Silver Sulfide Nanoparticles

This research work presents a facile and green route for synthesis silver sulfide (Ag2SNPs) nanoparticles from silver nitrate (AgNO3) and sodium sulfide nonahydrate (Na2S.9H2O) in the presence of rosemary leaves aqueous extract at ambient temperature (27 oC). Structural and morphological properties of Ag2SNPs nanoparticles were analyzed by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The surface Plasmon resonance for Ag2SNPs was obtained around 355 nm. Ag2SNPs was spherical in shape with an effective diameter size of 14 nm. Our novel approach represents a promising and effective method to large scale synthesis of eco-friendly antibacterial activity silver sulfide nanoparticles.

scholarly journals Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 788
Author(s):  
Jian-Huan Wang ◽  
Ting Wang ◽  
Jian-Jun Zhang
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Core Shell ◽  
High Quality ◽  
Quantum Devices ◽  
Wafer Scale ◽  
Transmission Electron ◽  
Controllable Growth

Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.

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