Magnetooptic Waveguide Material Structures and Devices

1999 ◽  
Vol 597 ◽  
Author(s):  
Chen S. Tsai ◽  
Jun Su
Keyword(s):  
Tuning Range ◽  
High Efficiency ◽  
Frequency Tuning ◽  
Guided Wave ◽  
Bragg Diffraction ◽  
Gadolinium Gallium Garnet ◽  
Material Structure ◽  
Optical Scanners ◽  
Integrated Optic Devices ◽  
Iron Garnet

AbstractRecent advances in the techniques for preparation of Ce-doped yttrium iron garnet (YIG) films on gadolinium gallium garnet (GGG) and semiconductor substrates, hybrid material structures of YIG/GGG- gallium arsenide (GaAs) combination, and the resulting microwave and guided-wave magnetooptic (MO) devices are presented. For example, high-efficiency MO Bragg cell modulators using the YIG/GGG-alumina material structure have been realized using a non-uniform bias magnetic field as well as an electronic feedback. Such MO modulators are being used to construct integrated optic devices such as optical scanners, switches, and frequency shifters. Also, a wideband microwave bandstop filter with a carrier frequency tuning range as high as 2.5 to 23.0 GHz using the YIG/GGG-GaAs material structure has been realized. The same material structure can be employed to perform MO Bragg diffraction experiment at ultrahigh carrier frequencies.

RF MAGNETIZATION OF MAGNETOSTATIC FORWARD VOLUME WAVE IN A YIG-GGG LAYERED STRUCTURE WITH APPLICATION TO DESIGN OF HIGH-PERFORMANCE GUIDED-WAVE MAGNETOOPTIC BRAGG CELLS

1991 ◽  
Vol 02 (03) ◽  
pp. 185-208 ◽  
Author(s):  
Y. PU ◽  
C.S. TSAI
Keyword(s):  
Layered Structure ◽  
High Performance ◽  
Mode Conversion ◽  
Guided Wave ◽  
Bragg Diffraction ◽  
Gadolinium Gallium Garnet ◽  
Geometrical Parameters ◽  
Iron Garnet ◽  
First Time ◽  
Good Agreement

Explicit expressions for the RF magnetization of magnetostatic forward volume waves (MSFVW) generated by a microstrip line transducer in a Yttrium Iron Garnet-Gadolinium Gallium Garnet (YIG-GGG) layered structure sandwiched between two finite ground planes have been derived for the first time. The behavior of the RF magnetization as a function of various physical and geometrical parameters and its influence on the design of high-performance guided-wave magnetooptic (MO) Bragg Cells are studied in detail. The effects of DC bias magnetic field and geometrical parameters on the RF magnetization and thus the MO Bragg diffraction or mode-conversion efficiency and the bandwidth are presented in plots generated using a computer. A good agreement between computed and experimental results has been obtained.

Recent Advances in Magnetostatic Waves-Based Integrated Magnetooptic Bragg Cell Modulators in Yig-Ggg Waveguides

1998 ◽  
Vol 517 ◽  
Author(s):  
Chen S. Tsai
Keyword(s):  
Diffraction Efficiency ◽  
Guided Wave ◽  
Bragg Diffraction ◽  
Gadolinium Gallium Garnet ◽  
Magnetostatic Wave ◽  
Recent Advances ◽  
Integration Architecture ◽  
Magnetostatic Waves ◽  
Hybrid Waveguide ◽  
Iron Garnet

AbstractThe most recent advances in the integration architecture and diffraction efficiency of magnetostatic wave (MSW)-based guided-wave magnetooptic (MO) Bragg cell modulators in yttrium iron garnet-gadolinium gallium garnet (YIG-GGG) waveguides are reported. A curved ion-milled hybrid waveguide lens pair has been integrated with a MO Bragg cell modulator in a taper waveguide with dimensions of 6.0x16.0mm2 to facilitate the collimation and focusing functions. An enhancement in the Bragg diffraction efficiency by two-to six-fold has been accomplished using a non-uniform bias magnetic field. An oscillator-based MO Bragg cell modulator has also been constructed and has provided a Bragg diffraction efficiency which is higher by a factor of two to four than that of a conventional delayline-based modulator.

Spectral Domain Magneto-Optical Magnetometry

2012 ◽  
Vol 190 ◽  
pp. 373-376
Author(s):  
M. Mansurova ◽  
O.V. Kolokoltsev
Keyword(s):  
Yttrium Iron Garnet ◽  
Guided Wave ◽  
Gadolinium Gallium Garnet ◽  
Pulsed Magnetic Fields ◽  
Yttrium Iron ◽  
Wave Regime ◽  
Optical Magnetometry ◽  
Spin Excitations ◽  
Saturation Effects ◽  
Iron Garnet

In this work we present a new concept for measuring high intensity pulsed magnetic fields (h (t)) through the spectral analysis of spin excitations in a saturated yttrium-iron garnet (YIG) thin film grown on a gadolinium gallium garnet (GGG) substrate. The spectrum of spin excitations, generated in the sample by picosecond h (t), was determined with the help of a magnetooptical (MO) Faraday probe in the guided wave regime of lightwave propagation. This technique, compared to the standard MO cells, allows one to avoid saturation effects because the amplitude of h (t) is measured in the frequency domain, and allows us to realize the analysis in real time taking advantage of strong a MO signal.

scholarly journals Crystallization Double-Layer Magneto-Active Films for Magnetophotonics

2021 ◽  
Vol 2091 (1) ◽  
pp. 012049
Author(s):  
T V Mikhailova ◽  
Yu E Vysokikh ◽  
A N Shaposhnikov ◽  
V N Berzhansky ◽  
S Yu Krasnoborodko ◽  
...  
Keyword(s):  
Double Layer ◽  
Crystallization Process ◽  
High Efficiency ◽  
Optical Devices ◽  
Gadolinium Gallium Garnet ◽  
Fused Quartz ◽  
Optical Nanostructures ◽  
Iron Garnet ◽  
Quartz Substrates ◽  
Semiconductor Process

Abstract Magneto-optics, magnetophotonics and magnetoplasmonics stay at the edge of scientific interests last years due to their unique features to manage the light and electromagnet field. Bi-substituted iron garnet (Bi:IG) is one of most promising magneto-optical material for these applications in order to its high efficiency in visible and infrared spectra. The possibility to integrate Bi:IG films to silicon semiconductor process leads to creation nanoscale hight performance magneto-optical devices. Bi:IG structures of different composition might be deposited by vacuum deposition on different substrates. The investigation of crystallization process of Bi:IG double-layer films at a different process parameter on gadolinium gallium garnet and fused quartz substrates allowing to determine dependences and suggestions for integration Bi:IG to semiconductor process or multicomponent optical nanostructures.

scholarly journals An Ultra-Low-Power K-Band 22.2 GHz-to-26.9 GHz Current-Reuse VCO Using Dynamic Back-Gate-Biasing Technique

Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 889
Author(s):  
Xiaoying Deng ◽  
Peiqi Tan
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Tuning Range ◽  
Frequency Tuning ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Back Gate ◽  
Ultra Low Power ◽  
Current Reuse ◽  
K Band

An ultra-low-power K-band LC-VCO (voltage-controlled oscillator) with a wide tuning range is proposed in this paper. Based on the current-reuse topology, a dynamic back-gate-biasing technique is utilized to reduce power consumption and increase tuning range. With this technique, small dimension cross-coupled pairs are allowed, reducing parasitic capacitors and power consumption. Implemented in SMIC 55 nm 1P7M CMOS process, the proposed VCO achieves a frequency tuning range of 19.1% from 22.2 GHz to 26.9 GHz, consuming only 1.9 mW–2.1 mW from 1.2 V supply and occupying a core area of 0.043 mm2. The phase noise ranges from −107.1 dBC/HZ to −101.9 dBc/Hz at 1 MHz offset over the whole tuning range, while the total harmonic distortion (THD) and output power achieve −40.6 dB and −2.9 dBm, respectively.

Implementation of tunable resonators in planar groove gap waveguide technology

2021 ◽  
pp. 1-7
Author(s):  
Titus Oyedokun ◽  
Riana H. Geschke ◽  
Tinus Stander
Keyword(s):  
Printed Circuit Board ◽  
Tuning Range ◽  
Frequency Tuning ◽  
Resonant Cavity ◽  
Circuit Board ◽  
Resonant Cavities ◽  
Tunable Resonators ◽  
Simulation Strategy ◽  
Dc Bias ◽  
Continuous Frequency

Abstract We present a tunable planar groove gap waveguide (PGGWG) resonant cavity at Ka-band. The cavity demonstrates varactor loading and biasing without bridging wires or annular rings, as commonly is required in conventional substrate-integrated waveguide (SIW) resonant cavities. A detailed co-simulation strategy is also presented, with indicative parametric tuning data. Measured results indicate a 4.48% continuous frequency tuning range of 32.52–33.98 GHz and a Qu tuning range of 63–85, corresponding to the DC bias voltages of 0–16 V. Discrepancies between simulated and measured results are analyzed, and traced to process variation in the multi-layer printed circuit board stack, as well as unaccounted varactor parasitics and surface roughness.

scholarly journals Crystallization of Bi-substituted iron garnet bi-layers

2021 ◽  
Vol 2086 (1) ◽  
pp. 012044
Author(s):  
T V Mikhailova ◽  
Yu E Vysokikh ◽  
A N Shaposhnikov ◽  
V N Berzhansky ◽  
S Yu Krasnoborodko ◽  
...  
Keyword(s):  
High Performance ◽  
Crystallization Process ◽  
Process Parameter ◽  
Gadolinium Gallium Garnet ◽  
Semiconductor Technology ◽  
Sputtering Deposition ◽  
Fused Quartz ◽  
Iron Garnet ◽  
Substrate Types

Abstract Magneto-optical (MO) structures are widely used for different application in the fields of magnetoplasmonics, magneto-optics, photonics e.t.c. Bi-substituted iron garnet (Bi:IG) is high-performance MO material. Integration of Bi:IG films to silicon semiconductor technology gives new opportunities to create nanoscale hight performance MO devices. Vacuum sputtering deposition allows to fabricate Bi:IG structures on different substrate types. Authors investigate crystallization process of Bi:IG bi-layers in a different process parameter (different layers composition and its thickness, temperature and time of annealing) using gadolinium gallium garnet GGG and fused quartz SiO2 substrates to determine dependences which impact on crystallization.

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