Low Temperature Crystallization of PbTiO3 Thin Film by Excimer Laser Irradiation

1999 ◽  
Vol 596 ◽  
Author(s):  
T. Mihara ◽  
S Mochizuki ◽  
T. Ishida ◽  
Y Sato ◽  
J. Nishii
Keyword(s):  
Perovskite Structure ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Structure Morphology ◽  
Excimer Laser Irradiation ◽  
Low Temperature Crystallization ◽  
Temperature Crystallization

AbstractLowering the fabrication temperature for ferroelectric films is very important not only for silicon monolithic circuits but also for various substrates. Amorphous PbTiO3 thin films were prepared on glass substrates using ArF pulsed laser deposition (PLD). They were subsequently treated by a laser-induced phase transformation technique to achieve a perovskite structure. After irradiation by an ArF pulsed laser with an energy density 50mJ/cm2 in air, the films crystallized into the perovskite structure. It was possible to maintain the substrate at room temperature during the whole fabrication process. The structure, morphology and composition of the films were characterized by X-ray diffraction diffractometry (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX), respectively. The surface of film irradiated with a laser was often rather rough and peeled off everywhere. It was necessary to control the number of laser pulses to avoid damaging the films. The effects of chemical composition and fabrication temperature are also discussed.

Investigation of the Crystallization Mechanisms in Indium Molybdenum Oxide Films by Vacuum Annealing

2005 ◽  
Vol 20 (8) ◽  
pp. 2030-2037 ◽  
Author(s):  
Shi-Yao Sun ◽  
Jow-Lay Huang ◽  
Ding-Fwu Lii
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxygen Vacancies ◽  
Vacuum Annealing ◽  
Strain Relaxation ◽  
Compressive Strain ◽  
High Mobility ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Temperature Crystallization

The crystallization mechanisms for potentially high mobility molybdenum-indium-oxide (IMO) film were studied. The crystalline IMO films were deposited on unheated glass substrates via high-density plasma evaporation, and subsequent vacuum annealing was performed at 150, 200, and 250 °C for 30 min. The results of x-ray diffraction and x-ray photoelectron spectroscopy and electrical properties suggested that the room-temperature crystallization was induced from the highest compressive strain, caused by the charged clusters and oxygen vacancies. The highest mobility of 75.8 cm2/Vs obtained at 250 °C was due to the charged In–Mo+6–O clusters and strain relaxation with (222)/(440) orientation change.

Crystal Polymorphs and Multiple Crystallization Pathways of Highly Pressurized 1-Ethyl-3-Methylimidazolium Nitrate

2019 ◽  
Vol 72 (2) ◽  
pp. 87 ◽  
Author(s):  
Hiroshi Abe ◽  
Takahiro Takekiyo ◽  
Yukihiro Yoshimura ◽  
Nozomu Hamaya ◽  
Shinichiro Ozawa
Keyword(s):  
Differential Scanning Calorimetry ◽  
High Pressure ◽  
Room Temperature ◽  
Ambient Pressure ◽  
Optical Microscope ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Low Temperature Crystallization ◽  
Temperature Crystallization

Crystal polymorphs and multiple crystallization pathways of a room-temperature ionic liquid (RTIL) were observed only under high pressure (HP). The RTIL was 1-ethyl-3-methylimidazolium nitrate, [C2mim][NO3]. The HP-crystal polymorphs were related to conformations of the C2mim+ cation, and the HP-crystal pathways determined by the presence or absence of the planar′ (P′) conformation of the C2mim+ cation were switched at the bifurcation pressure (PB). Above PB, modulated crystal structures derived from the HP-inherent P′ conformer. Simultaneous X-ray diffraction and differential scanning calorimetry measurements, accompanied by optical microscope observations, confirmed the normal low-temperature crystallization of [C2mim][NO3] under ambient pressure.

scholarly journals The Spinning Voltage Influence on the Growth of ZnO-rGO Nanorods for Photocatalytic Degradation of Methyl Orange Dye

Catalysts ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 660 ◽  
Author(s):  
Pierre G. Ramos ◽  
Clemente Luyo ◽  
Luis A. Sánchez ◽  
Enrique D. Gomez ◽  
Juan M. Rodriguez
Keyword(s):  
Methyl Orange ◽  
Photoelectron Spectroscopy ◽  
Analytical Techniques ◽  
Electrospun Nanofibers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Reduced Graphene ◽  
Structure Morphology ◽  
Seed Layers

In this work, well-designed zinc oxide-reduced graphene oxide (ZnO-rGO) nanorods (NRs) were synthesized by a hydrothermal method using electrospun ZnO-rGO seed layers. The ZnO-rGO seed layers were fabricated on fluorine-doped tin oxide (FTO) glass substrates through calcined of electrospun nanofibers at 400 °C in the air for 1 h. The nanofibers were prepared by electrospinning different spinning voltages and a spinning solution containing zinc acetate, polyvinyl pyrrolidone, and 0.2 wt% rGO. From a detailed characterization using various analytical techniques, for instance, X-ray diffraction (XRD), field emission scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS), the dependence of the structure, morphology, and optical properties of the ZnO-rGO NRs was demonstrated. The photocatalytic activities of ZnO-rGO nanorods were evaluated through the degradation of dye methyl orange (MO). The results show that the change of spinning voltages and the coupling of rGO with ZnO improved photodecomposition efficiency as compared to pure ZnO. The highest photocatalytic efficiency was obtained for the ZnO-rGO NRs prepared with a spinning voltage of 40 kV.

Low-temperature crystallization and structure determination of N-(trifluoromethyl)formamide, N-(2,2,2-trifluoroethyl)formamide and 2,2,2-trifluoroethyl isocyanide

1999 ◽  
Vol 55 (1) ◽  
pp. 70-77 ◽  
Author(s):  
G. J. Perpétuo ◽  
J. Buschmann ◽  
P. Luger ◽  
D. Lentz ◽  
D. Dreissig
Keyword(s):  
Crystal Structure ◽  
Low Temperatures ◽  
Crystal Packing ◽  
Crystal Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
Low Temperature Crystallization ◽  
Temperature Crystallization

Crystals of N-(trifluoromethyl)formamide, C2H2F3NO, (I), N-(2,2,2-trifluoroethyl)formamide, C3H4F3NO, (II), and 2,2,2-trifluoroethyl isocyanide, C3H2F3N, (III), were grown in situ on an X-ray diffractometer and analysed by single-crystal X-ray diffraction methods at low temperatures. Crystal data: (I) orthorhombic, P212121, a = 4.547 (2) Å, b = 5.947 (3) Å, c = 14.731 (9) Å, V = 398.3 (4) Å3, Z = 4, M r = 113.05, T = 143 K, D x = 1.885 Mg m−3; (II) monoclinic, P21/n, a = 4.807 (1) Å, b = 16.707 (3) Å, c = 6.708 (1) Å, β = 109.90 (1)°, V = 506.6 (2) Å3, Z = 4, M r = 127.07, T = 141 K, D x = 1.666 Mg m−3; (III) orthorhombic, P212121, a = 5.668 (2) Å, b = 9.266 (3) Å, c = 8.626 (2) Å, V = 453.0 (2) Å3, Z = 4, M r = 109.06, T = 163 K, D x = 1.599 Mg m−3. The results showed that in the crystal both formamides (I) and (II) are exclusively present in the form of the Z isomer, although measurements of solutions of (I) have shown that the E isomer prevails [Lentz et al. (1987). Angew. Chem. 99, 951–953]. In addition ab initio calculations for (I) predicted the E isomer to be the more stable one. In compound (III) the isocyanide group is staggered with respect to the trifluoroethyl group. In the crystal packing of (I) and (II) intermolecular N—H\cdotsO hydrogen bonds generate infinite chains. In (I), these chains are linked to form sheets by C—H\cdotsO contacts. In the crystal structure of (III) each isocyanide dipole is surrounded by four electronegative F atoms with intermolecular C\cdotsF contacts between 3.4 and 3.5 Å.

Interface Temperatures and Temperature Gradients in Silicon During Pulsed Laser Irradiation

1988 ◽  
Vol 100 ◽  
Author(s):  
B. C. Larson ◽  
J. Z. Tischler ◽  
D. M. Mills
Keyword(s):  
Heat Flow ◽  
Laser Irradiation ◽  
Thermal Strain ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
Temperature Gradients ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Gradients ◽  
Pulsed Laser Irradiation

ABSTRACTNanosecond-resolution x-ray diffraction has been used to measure the interface and lattice temperatures of silicon during rapid, pulsed-laser induced melting and regrowth in silicon. Measurements have been carried out on <100> and <111> oriented silicon using the (100) and (111) reflections to measure the thermal strain during 30 ns, 1.1 J/cm2 KrF laser pulses. The results indicate overheating to be low (< 2 K/m/s) for both orientations with undercooling rates of 5.6 K/m/s and 11.4 K/m/s for the <100> and <111> orientations, respectively. Observations of higher than expected temperature gradients below the liquidsolid interface have been discussed in terms of restricted heat flow under high gradients.

SUPERCONDUCTING Bi-Sr-Ca-Cu-O THIN FILMS PREPARED BY THE PULSED-LASER EVAPORATION

1988 ◽  
Vol 02 (08) ◽  
pp. 999-1003
Author(s):  
F.M. ZHANG ◽  
Y.C. ZHANG ◽  
S.J. GU ◽  
Y.L. ZHOU ◽  
Z.H. CHEN ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Nd:Yag Laser ◽  
Pulse Width ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
Laser Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zero Resistance

We report here the preparation of the superconducting Bi-Sr-Ca-Cu-O thin films on SrTiO 3(100) substrates by a Nd:YAG laser, which provides laser pulses with wavelength of 1.06µm and pulse width of 200ns. After the heat treatment at 850°C for half an hour in oxygen flow, the samples exhibit superconductivity with the zero resistance at 66.8K and the onset temperature around 84K. X-ray diffraction analyses show that the samples have the preferred orientation with the c-axis perpendicular to the substrate.

Preparation of SiO2 Encapsulated ZnO Nanopowders by Sol-Gel Method

2011 ◽  
Vol 412 ◽  
pp. 13-16
Author(s):  
Yan Xiang Wang ◽  
Jian Sun ◽  
Xiao Yan Li
Keyword(s):  
Liquid Phase ◽  
Sol Gel ◽  
Average Diameter ◽  
Molar Ratio ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zno Nanocrystals ◽  
Zno Particles ◽  
Low Temperature Crystallization ◽  
Temperature Crystallization

The shell-core structures of SiO2/ZnO nanopowders were obtained by simple two-step technique based on low-temperature crystallization from liquid phase. The influence of molar ratio of SiO2/ZnO in the reaction mixture on the morphology of obtained SiO2/ZnO nanopowders was studied. Crystalline structure of SiO2/ZnO nanocrystals obtained was proofed by the X-ray diffraction data. The average diameter of SiO2/ZnO nanocrystals was about 80~100nm according to FSEM and TEM data. It is shown that SiO2 components on the surface prevent the thermal interfusion of ZnO particles. Morphology and diameter of raw ZnO, SiO2/ZnO nanopowders prepared with molar ratio of SiO2/ZnO 0.1, 0.2, and 0.5 were almost same. When molar ratio of SiO2/ZnO was 0.5, ZnO core was coated with SiO2, and the thickness of shell was about 10nm. At the same time, SiO2 nanocrystals also formed the islands structure.

INDIUM SELENIDE THIN FILMS BY LASER IRRADIATION OF In/Se LAYERED STRUCTURE

2013 ◽  
Vol 20 (06) ◽  
pp. 1350058 ◽  
Author(s):  
R. E. ORNELAS-ACOSTA ◽  
S. SHAJI ◽  
D. AVELLANEDA ◽  
G. A. CASTILLO ◽  
T. K. DAS ROY ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Laser Irradiation ◽  
Layered Structure ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Structure Morphology ◽  
532 Nm

In this work, we report the formation of In 6 Se 7 thin films by laser irradiation of In / Se layered structure. Indium layer was deposited on glass substrates by thermal evaporation on which selenium thin film was grown by chemical bath deposition from an aqueous solution containing 10 ml of sodium selenosulphate (0.1 M), 1.0 ml acetic acid (25%) and 70 ml distilled water during 5 min. The In / Se coated glass substrates were irradiated using a 532 nm continuous laser for 3–5 min. Structure, morphology, optical and electrical properties of the irradiated thin films were analyzed using various techniques. X-ray diffraction analysis showed that the irradiated thin films were In 6 Se 7 of monoclinic structure. X-ray photoelectron spectroscopic study on the laser irradiated samples provided uniform relative composition of In and Se in the thin films formed after laser irradiation. The morphology, optical and electrical properties of the irradiated samples were investigated. The optical band gap of the In 6 Se 7 thin films was 2.2 eV and also, the thin films were photoconductive.

Overheating and Undercooling in Silicon During Pulsed-Laser Irradiation

1984 ◽  
Vol 35 ◽  
Author(s):  
B. C. Larson ◽  
J. Z. Tischler ◽  
D. M. Mills
Keyword(s):  
Pulsed Laser ◽  
Laser Pulses ◽  
High Energy ◽  
X Ray Diffraction ◽  
Laser Melting ◽  
Time Resolved ◽  
Synchrotron Source ◽  
X Ray ◽  
Krf Excimer Laser ◽  
Pulsed Laser Irradiation

ABSTRACTWe have used time-resolved x-ray diffraction measurements of thermal expansion induced strain to measure overheating and undercooling in <100> and <111> oriented silicon during pulsed laser melting and regrowth. 249 nm (KrF) excimer laser pulses of 1.2 J/cm2 energy density and 25 ns FWHM were synchronized with x-ray pulses from the Cornell High Energy Synchrotron Source (CHESS) to carry out Bragg profile measurements with ±2 ns time resolution. Combined overheating and undercooling values of 120 ± 30 K and 45 ± 20 K were found for the <111> and <100> orientations, respectively, and these values have been used to obtain information on the limiting regrowth velocities for silicon.

scholarly journals Laser energy effect on the properties of ZnS thin films prepared by PLD technique

2019 ◽  
Vol 11 (21) ◽  
pp. 84-90
Author(s):  
Esraa K. Hamed
Keyword(s):  
Thin Films ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
Energy Effect ◽  
X Ray ◽  
Glass Substrates ◽  
Atomic Force

Zinc sulfide (ZnS) thin films were deposited on glass substrates using pulsed laser deposition technique. The laser used is the Q-switched Nd: YAG laser with 1064nm wavelength and 1Hz pulse repetition rate and varying laser energy 700mJ-1000mJ with 25 pulse. The substrate temperature was kept constant at 100°C. The structural, morphological and optical properties of ZnS thin films were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscope (AFM) and UV-VIS spectrophotometer.

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