Frequency Dependence of the Coercive Voltage of Ferroelectric Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
R. Waser ◽  
O. Lohse ◽  
M. Grossmann ◽  
U. Boettger ◽  
D. Bolten ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Frequency Dependence ◽  
Recent Progress ◽  
Theoretical Models ◽  
Ferroelectric Thin Films ◽  
Dynamic Hysteresis ◽  
Measuring Techniques ◽  
Pulse Characterization ◽  
Fast Pulse

AbstractRecent progress in the measuring techniques based on a combination of a quasistatic P-V analysis, conventional dynamic hysteresis measurements, and fast pulse characterization allows to determine the coercive voltage as a function of the frequency over a range of more than seven orders of magnitude. In this review, we explain the experimental techniques and present the results for the thin film systems of SrBi2Ta2O9 (SBT) and Pb(ZrTi)O3 (PZT). Theoretical models of the correlation between the ferroelectric relaxation and the coercive voltage are discussed in the light of the new data.

Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Polarization Reversal ◽  
Ambient Gas ◽  
Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

CRITICAL BEHAVIOUR OF FERROELECTRIC THIN FILMS

2002 ◽  
Vol 16 (03) ◽  
pp. 473-480 ◽  
Author(s):  
JULIA M. WESSELINOWA ◽  
STEFFEN TRIMPER
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Scaling Laws ◽  
Transverse Field ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Thin Films ◽  
Number Of Layers ◽  
Ising Systems ◽  
2D And 3D ◽  
Good Agreement

Based on an Ising model in a transverse field (TIM) and using a Green's function formalism the critical exponents of the polarization β and of the longitudinal susceptibility γ are calculated for a ferroelectric thin film consisting of N layers. The exponents depends on the number of layers in a significant manner. Whereas for N=3 layers the exponents are β=0.131 and γ=1.739 there is a change over to β=0.315 and γ=1.239 in case of N=30. The datas are in a good agreement with predictions for 2D and 3D Ising systems. Using scaling laws other exponents like α, δ, η and ν are obtained, too.

RF Magnetron Sputtered Ba0.96Ca0.04Ti0.84Zr0.16O3 Thin Films for High Frequency Applications

2004 ◽  
Vol 833 ◽  
Author(s):  
Ali Mahmud ◽  
T. S. Kalkur ◽  
N. Cramer
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Substrate Temperature ◽  
High Frequency ◽  
Satellite Communications ◽  
Ferroelectric Thin Films ◽  
Paraelectric State ◽  
Deposited Films

ABSTRACTPerovskite ferroelectric thin films in the paraelectric state exhibit outstanding dielectric properties, even at high frequencies (>1 GHz). The tunable dielectric constant of ferroelectric thin films can be used to design frequency and phase agile components. High dielectric constant thin film ferroelectric materials in the paraelectric state have received enormous attention due to their feasibility in applications such as decoupling capacitors and tunable microwave capacitors; the latter application has been fueled by the recent explosion in wireless and satellite communications. This paper reportsBa0.96Ca 0.04Ti0.84Zr0.16O3 (BCTZ) thin films that were deposited on Pt electrodes using radio frequency magnetron sputtering at a low (450 °C) substrate temperature. Sputtered thin film BCTZ at low substrate temperature is compatible with conventional integrated circuit technology. The structural characterization of the deposited films was performed by x-ray diffraction. The electrical characterization of the films was achieved by capacitance-voltage, current-voltage, and S-parameter (via vector network analyzer) measurements. In addition, the effect of post annealing on the deposited films was investigated. A detailed understanding of both their processing and material properties is discussed for successful implementation in high frequency applications.

Ferroelectric Thin Films and Thin Film Devices

1993 ◽  
pp. 185-211
Author(s):  
J. F. Scott ◽  
C. A. Araujo ◽  
L. D. McMillan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Thin Films ◽  
Thin Film Devices

DYNAMIC PROPERTIES OF DIELECTRIC SUSCEPTIBILITY IN FERROELECTRIC THIN FILMS

2016 ◽  
Vol 23 (03) ◽  
pp. 1650010 ◽  
Author(s):  
LIAN CUI ◽  
HAIYING CUI ◽  
CHUNMEI WU ◽  
GUIHUA YANG ◽  
ZELONG HE ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Applied Field ◽  
Landau Theory ◽  
Dynamic Properties ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Thin Films ◽  
Dielectric Susceptibility ◽  
Surface Transition ◽  
Frequency Temperature

In this paper, frequency, temperature, film thickness, surface effects, and various parameters dependence of dielectric susceptibility is investigated theoretically for ferroelectric thin films by the modified Landau theory under an AC applied field. The dielectric susceptibility versus AC applied field shows butterfly-shaped behavior, and depends strongly on the frequency and amplitude of the field and temperature. Our study shows that the existence of the surface transition layer can depress the dielectric susceptibility of a ferroelectric thin film. These results are well consistent with the phenomena reported in experiments.

Frequency dependence of the coercive field and the internal bias field in ferroelectric thin films

2009 ◽  
Vol 51 (7) ◽  
pp. 1348-1350 ◽  
Author(s):  
A. S. Sidorkin ◽  
L. P. Nesterenko ◽  
S. V. Ryabtsev ◽  
A. A. Sidorkin
Keyword(s):  
Thin Films ◽  
Frequency Dependence ◽  
Coercive Field ◽  
Bias Field ◽  
Ferroelectric Thin Films ◽  
Internal Bias ◽  
Internal Bias Field

Nanometer Scale Domain Measurement of Ferroelectric Thin Films Using Scanning Nonlinear Dielectric Microscopy

2000 ◽  
Vol 655 ◽  
Author(s):  
Hiroyuki Odagawa ◽  
Kaori Matsuura ◽  
Yasuo Cho
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
High Resolution ◽  
Ferroelectric Domain ◽  
Ferroelectric Thin Films ◽  
Experimental Result ◽  
Nanometer Scale ◽  
Nonlinear Dielectric ◽  
Pzt Thin Film ◽  
Very High

AbstractA very high-resolution scanning nonlinear dielectric microscope with nanometer resolution was developed for the observation of ferroelectric polarization. We demonstrate that the resolution of the microscope is of a sub-nanometer order by measurement of domains in PZT and SBT thin films. The experimental result shows that nano-sized 180° c-c ferroelectric domain with the width of 1.5 nm for PZT thin film are observed. The result also shows that the resolution of the microscope is less than 0.5 nm for the PZT thin film.

Sign in / Sign up

Export Citation Format

Share Document