Low Threshold Field Emission From Nanocluster Carbon Films

1999 ◽  
Vol 593 ◽  
Author(s):  
W.I. Milne ◽  
B.S. Satyanarayana ◽  
J. Robertson
Keyword(s):  
Field Emission ◽  
Deposition Process ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Threshold Field ◽  
Bonding Ratio ◽  
Low Threshold ◽  
Current Densities ◽  
Vacuum Arc Deposition ◽  
Arc Deposition

ABSTRACTCarbon films with variable sp3/sp2 bonding ratio can be deposited on a variety of substrates at room temperature, using the cathodic vacuum arc deposition process. The variation in their surface morphology as a function of He and N2partial pressure during growth have been investigated and it has been shown that the morphology of the films can be varied from the mirror like smooth tetrahedrally bonded carbon (ta-C) films through nanocluster to fibrous type carbon. This paper reviews the work carried out on Field Emission from these various carbon films. Threshold fields as low as 1 V/μm for emission current densities of 1 μA/cm2 and emission site densities of up to 104 -105/cm2 have been obtained.

Field Emission from Tetrahedrally Bonded Amorphous Carbon

1997 ◽  
Vol 471 ◽  
Author(s):  
W. I. Milne ◽  
J. Robertson ◽  
B. S. Satyanarayanan ◽  
A. Hart
Keyword(s):  
Field Emission ◽  
Amorphous Carbon ◽  
Applied Field ◽  
Vacuum Arc ◽  
Threshold Field ◽  
Nitrogen Doped ◽  
Bonding Ratio ◽  
Current Densities ◽  
Filtered Cathodic Vacuum Arc ◽  
Tetrahedrally Bonded

ABSTRACTA series of tetrahedrally bonded carbon (ta-C) films have been produced using a Filtered Cathodic Vacuum Arc System. The threshold field and current densities achievable have been investigated as a function of sp3/sp2 bonding ratio and nitrogen content. Typical undoped ta-C films have a threshold field of 15–20V/μm and optimally nitrogen doped films exhibit threshold fields as low as ∼ 5 V/μm. Current densities of typically 10-4 A/cm2 at an applied field of 20V/micron were also obtained.

Deposition of superhard amorphous carbon films by pulsed vacuum arc deposition

1998 ◽  
Vol 98 (1-3) ◽  
pp. 1097-1101 ◽  
Author(s):  
B. Schultrich ◽  
H.-J. Scheibe ◽  
D. Drescher ◽  
H. Ziegele
Keyword(s):  
Amorphous Carbon ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Amorphous Carbon Films ◽  
Vacuum Arc Deposition ◽  
Arc Deposition

FIELD EMISSION FROM CARBON FILMS GROWN BY THE CATHODIC ARC PROCESS

2000 ◽  
Vol 14 (02n03) ◽  
pp. 301-307 ◽  
Author(s):  
W. I. MILNE ◽  
J. ROBERTSON ◽  
B. S. SATYANARAYANA ◽  
A. HART
Keyword(s):  
Field Emission ◽  
Room Temperature ◽  
Deposition Process ◽  
Carbon Films ◽  
Deposition Parameters ◽  
Bonding Ratio ◽  
Cluster Beams ◽  
Cathodic Arc ◽  
Tetrahedrally Bonded

By using the catholic vacuum are deposition process, carbon films with variable sp 3/ sp 2 bonding ratio can be deposited on a variety of substrates at room temperature. The morphology of the films can be varied from the mirror like smooth tetrahedrally bonded carbon (ta-C) films through nanocluster to fibrous type carbon by altering the deposition parameters. This paper reviews the work carried out on Field Emission from such carbon films and compares the results with those on nanocluster films prepared using supersonic cluster beams. Threshold fields as low as 1 V /μ m with emission site densities of up to 104-105/ cm 2 have been obtained.

scholarly journals On the properties of TiN films prepared by vacuum arc deposition process.

Shinku ◽  
1987 ◽  
Vol 30 (10) ◽  
pp. 786-792 ◽  
Author(s):  
Koji OKAMOTO ◽  
Eiji KAMIJO
Keyword(s):  
Deposition Process ◽  
Vacuum Arc ◽  
Tin Films ◽  
Vacuum Arc Deposition ◽  
Arc Deposition
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