Study of Carbon Nanotubes Under High Pressure

1999 ◽  
Vol 593 ◽  
Author(s):  
J. Tang ◽  
L.C. Qin ◽  
A. Matsushita ◽  
T. Kikegawa ◽  
M. Yudasaka ◽  
...  

ABSTRACTThe elastic behavior and structural changes of single-walled carbon nanotubes under hydrostatic pressure produced by a gasketed diamond anvil cell has been studied using in situ synchrotron x-ray diffraction. The compaction of the raft-like bundles of single-walled carbon nanotube showed a linear behavior up to 1.5 GPa pressure and the volume compressibility deduced from the experimental data is 0.024 GPa−1. The elastic deformation is attributed to the combination of a reduction in the inter-tubular distance and the polygonization of the otherwise circular nanotube sections.

2019 ◽  
Vol 21 (7) ◽  
pp. 4063-4071 ◽  
Author(s):  
Ana Santidrián ◽  
José M. González-Domínguez ◽  
Valentin Diez-Cabanes ◽  
Javier Hernández-Ferrer ◽  
Wolfgang K. Maser ◽  
...  

The effect of doping on the electronic properties in bulk single-walled carbon nanotube (SWCNT) samples is studied for the first time using a new in situ Raman spectroelectrochemical method, and further verified by DFT calculations and photoresponse.


RSC Advances ◽  
2019 ◽  
Vol 9 (48) ◽  
pp. 28135-28145
Author(s):  
Ahmed I. A. Abd El-Mageed ◽  
Takuji Ogawa

For the first time, using scanning probe microscopy, the supramolecular structures of terbium porphyrin double-decker complexes were observed on single-walled carbon nanotubes surfaces, where the molecules formed a well-ordered self-assembled array.


2011 ◽  
Vol 2011 ◽  
pp. 1-4 ◽  
Author(s):  
Guiru Gu ◽  
Yunfeng Ling ◽  
Runyu Liu ◽  
Puminun Vasinajindakaw ◽  
Xuejun Lu ◽  
...  

We report an all-printed thin-film transistor (TFT) on a polyimide substrate with linear transconductance response. The TFT is based on our purified single-walled carbon nanotube (SWCNT) solution that is primarily consists of semiconducting carbon nanotubes (CNTs) with low metal impurities. The all-printed TFT exhibits a high ON/OFF ratio of around 103and bias-independent transconductance over a certain gate bias range. Such bias-independent transconductance property is different from that of conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) due to the special band structure and the one-dimensional (1D) quantum confined density of state (DOS) of CNTs. The bias-independent transconductance promises modulation linearity for analog electronics.


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