Measurement Technique, Oxide Thickness and Area Dependence of Soft-Breakdown

1999 ◽  
Vol 592 ◽  
Author(s):  
T. Nigam ◽  
R. Degraeve ◽  
G. Groeseneken ◽  
M. Heyns ◽  
H.E. Maes
Keyword(s):  
Temperature Dependence ◽  
Measurement Technique ◽  
Quantum Tunneling ◽  
Physical Mechanism ◽  
Oxide Thickness ◽  
Tunneling Model ◽  
Conducting Path ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Soft Breakdown

ABSTRACTFor sub-5 nm oxides there are two different stages for breakdown; soft breakdown (SBD) and hard breakdown (HBD). It has been shown that both SBD and HBD exhibit the same statistics. Therefore, the physical mechanism governing them is the same. The major difference between them is the energy transferred from the capacitor to the localized conducting path. In this paper, a simple equivalent circuit is proposed to explain the effect of the measurement technique, oxide thickness, and test structure area on the detection of soft breakdown. Also an inelastic quantum tunneling model is proposed to discuss the current-voltage characteristics after SBD. The model is also successful in explaining the temperature dependence of SBD IV characteristics.

Comparison of Current-Voltage Characteristics of Bulk Polyaniline and Nano Dimensional Polyaniline Particles in Nanoporous Dielectric Matrix of MIL-101

2013 ◽  
Vol 711 ◽  
pp. 8-13
Author(s):  
A.I. Romanenko ◽  
K.M. Limaev ◽  
D.N. Dybtsev ◽  
V.P. Fedin ◽  
S.B. Aliev ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Temperature Dependence ◽  
Model Fit ◽  
Tunneling Model ◽  
Dielectric Matrix ◽  
Current Voltage ◽  
Current Voltage Characteristics

We investigated current-voltage (I-V) characteristics of bulk polyaniline and aniline polymerized inside nanopores of chromium terephthalate dielectric matrix MIL-101. The temperature dependence of electrical conductivity σ (T) of these materials are described by the fluctuation-induced tunneling model (FIT), which means that the main contribution to a net conductivity is caused by contacts between particles of the polyaniline. The comparison of I-V for these two types of materials shown that I-V characteristics of bulk polyaniline are described by the quasi-1D VRH model while for aniline polymerized inside nanopores of chromium terephthalate dielectric matrix MIL-101 by extended FIT model.

Model for the current–voltage characteristics of ultrathin gate oxides after soft breakdown

1998 ◽  
Vol 84 (8) ◽  
pp. 4351-4355 ◽  
Author(s):  
M. Houssa ◽  
T. Nigam ◽  
P. W. Mertens ◽  
M. M. Heyns
Keyword(s):  
Gate Oxides ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Soft Breakdown

On the Physical Mechanism of the Interaction of the Microwave Radiation with the Semiconductor Diodes

2014 ◽  
Vol 1016 ◽  
pp. 521-525 ◽  
Author(s):  
V.V. Shurenkov
Keyword(s):  
Microwave Radiation ◽  
Main Part ◽  
Physical Mechanism ◽  
Semiconductor Devices ◽  
Microwave Devices ◽  
Electronic Systems ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Power Microwave ◽  
Forbidden Gap

The electronic systems of aerospace techniques include power microwave devices and analog and digital semiconductor devices. The radiation of power microwave devices may effect on the semiconductor devices. So it’s necessary to know the electromagnetic effects of this radiation on the semiconductor devices. The electromagetic effects of the microwave radiation exposure on the semiconductor diodes, the main part of any semiconductor devices, are considered. The changes of current – voltage characteristics of the diodes are explained, outgoing from the model of the recombination of carriers through deep energy level recombination center in forbidden gap induced by microwave radiation field.

Temperature dependence of the current‐voltage characteristics of silicon MIS solar cells

1979 ◽  
Vol 35 (5) ◽  
pp. 416-418 ◽  
Author(s):  
J. Shewchun ◽  
R. Singh ◽  
D. Burk ◽  
F. Scholz
Keyword(s):  
Solar Cells ◽  
Temperature Dependence ◽  
Current Voltage ◽  
Current Voltage Characteristics

Temperature dependence of current-voltage characteristics in μc-Si:H and pm-Si:H PIN structures

2012 ◽  
Vol 1426 ◽  
pp. 365-370
Author(s):  
Francisco Temoltzi Avila ◽  
Andrey Kosarev ◽  
Ismael Cosme ◽  
Mario Moreno ◽  
P. Roca y Cabarrocas
Keyword(s):  
Temperature Dependence ◽  
Temperature Change ◽  
Ideality Factor ◽  
Dark Current ◽  
Series Resistance ◽  
Equivalent Circuit Model ◽  
Saturation Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

ABSTRACTThe dark current-voltage characteristics of PIN structures are studied and analyzed for PV samples as for integral device without taking account the performance of the different elements typically used in equivalent circuit model such as diode n-factor, shunt and series resistances. The contribution of all these elements is very important in the development of devices because they determine the performance characteristics. In this work we have studied and compared the temperature dependence of current-voltage characteristics in μc-Si:H and pm-Si:H p-i-n structures having approximately the same efficiencies with emphasis on their different electronic characteristics such as shunt (Rsh) and series (Rs) resistance, ideality factor (n), and the saturation current (Is), which give us some ideas on role of these elements. In the pm-Si:H cell it was observed that the Rs increases with the increase of the temperature in contrast to the μc-Si:H structures, where the series resistance reduces with temperature change from T = 300 up to 480K. In both the pm-Si:H and μc-Si:H samples Rshreduces with temperature change from 300 up to 480 K. The ideality factor in the pm-Si:H structure shows an increase, and in μc-Si:H a reduction, when temperature increases. Saturation current in both cases increases with temperature as it was expected. From the saturation current it was obtained the build-in potential. Analysis behavior of both saturation current and n-factor with temperature shows that build-in potential increases with temperature in the pm-Si:H, but reduces in μc-Si:H structure.

ELECTRONIC STRUCTURE AND CONDUCTIVITY OF HYDROCARBON FILMS OBTAINED IN PLASMA DISCHARGES OF TOKAMAK T-10

1970 ◽  
Vol 61 (11) ◽  
Author(s):  
Galina A. Sokolina ◽  
Igor I. Arkhipov ◽  
Nikolay Yu. Svechnikov ◽  
Sergey A. Grashin
Keyword(s):  
Activation Energy ◽  
Electronic Structure ◽  
Temperature Dependence ◽  
Direct Current ◽  
Plasma Discharges ◽  
X Ray ◽  
Hydrocarbon Films ◽  
Direct Current Conductivity ◽  
Current Voltage ◽  
Current Voltage Characteristics

Amorphous hydrocarbon films on silicon substrates obtained in the chamber of tokamak T-10 with space-bounded deuterium plasma by carbon diaphragms were studied. Using the methods of spectrophotometry, ellipsometry, X-ray photoemission spectroscopy and X-ray excited Auger electron spectroscopy, it was established that the refraction and absorption coefficients of films, as well as the parameters of the electronic structure such as the magnitude of the band gap, the fraction of sp2-hybridized carbon and the chemical composition of impurities depend on the characteristics of the discharge in the tokamak. It is shown that the deposited films refer to high-resistance dielectrics, and they can be classified by optical properties as hard or soft amorphous hydrocarbon films, depending on the type of the plasma discharge (pulse working discharge or long-term low-energy cleaning discharge). Wherein, the conductivity of hard films is less than that of soft films, which corresponds to a smaller fraction of sp2-states of carbon in these films and to a higher value of the band gap. The current-voltage characteristics and the temperature dependence of the direct current conductivity of hard and soft films were measured. It was shown that in the temperature range of 293–550 K, the conductivity is determined by the hopping conductivity mechanism over localized states near the Fermi level and the boundaries of the allowed bands. The hopping conductivity mechanism is also indicated by the power law obtained at room temperature at alternating current with a value of a power exponent close to 0.8. The measurement of the current-voltage characteristics and the temperature dependence of the conductivity of hard and soft films showed a significant difference in the activation energy of conductivity and the conductivity at an elevated temperature. The established dependences of the direct current conductivity and the activation energy value of the films on the discharge parameters can be used as diagnostic benchmarks of different types of plasma discharges in a tokamak. Data on the electrical conductivity of the films are analyzed within the framework of the concept of the electronic structure of amorphous non-crystalline materials.  

Influence of Domain Structure on Magnetoresistance in Perovskite Manganite Grain Boundary Junctions

2001 ◽  
Vol 674 ◽  
Author(s):  
Robert Gunnarsson ◽  
Anatoli Kadigrobov ◽  
Zdravko Ivanov
Keyword(s):  
Grain Boundary ◽  
Temperature Dependence ◽  
Focused Ion Beam ◽  
Domain Walls ◽  
Ion Beam ◽  
Perovskite Manganite ◽  
Current Voltage ◽  
Single Grain ◽  
Current Voltage Characteristics ◽  
The Impact

ABSTRACTWe have been able to deduce a temperature dependence of the built-in potential in La2/3Sr1/3MnO3 grain boundary junctions. This has been performed by trimming a single grain boundary down to 1μm width with a focused ion-beam. We can thereby see the impact of single domain walls on the magnetoresistance and the current-voltage characteristics. We have also demonstrated the effect of averaging as we increased the number of junctions.

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