Dielectric Properties of Bi2Ti2O7 Thin Films With (111) Orientation

1999 ◽  
Vol 592 ◽  
Author(s):  
Zhuo Wang ◽  
J. Huang ◽  
S.W. Wang ◽  
X.X. Hong ◽  
Y. Hou ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Bismuth Titanate ◽  
X Ray Diffraction ◽  
Titanium Butoxide ◽  
X Ray ◽  
Ceramic Films ◽  
Current Voltage ◽  
Source Materials

ABSTRACTBismuth titanate thin films have been prepared on silicon by metalorganic decompositionMOD) technique with bismuth nitrate and titanium butoxide as source materials. The growth procedure of the Bi2Ti2O7 thin films is discussed in this paper. The surface morphology of the Bi2Ti2O7 film was investigated by using Electric Force Microscope (EFM), and the crystallization of the films was studied by x-ray diffraction (XRD). Bismuth titanate thin film prepared on (100) silicon substrate showed strong (111) orientation. Its dielectric properties and the current-voltage (I-V) characteristics were measured. The dielectric constant of the Bi2Ti2O7 thin films vs. frequency, in the temperature range of 100-800 °C, were studied. The dielectric constant and the dielectric loss for Bi2Ti2O7 are 118 and 0.07 respectively at 100KHz. For the Bi2Ti2O7 films with 0.4µm in thickness annealed at 580 °C for 40 minutes, their leakage current density is 4.06×10−7 A/cm2 at an applied voltage of 15V.The ferroelectric phase transition has been observed distinctly and the Curie temperature was determined for the Bi2Ti2O7 ceramic films. Capacitance vs. temperature was measured from 27-800 at 1KHz, 100KHz, 100KHz and 1MHz.

Sol-Gel derived Bi4-xNdxTi3O12 Thin Films and Their Characterization

2002 ◽  
Vol 737 ◽  
Author(s):  
R.E. Melgarejo ◽  
M.S. Tomar ◽  
A. Hidalgo ◽  
R.S. Katiyar
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Bismuth Titanate ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Complete Solid Solution ◽  
Sol Gel Process ◽  
Ferroelectric Memory ◽  
Initial Results

ABSTRACTNd substituted bismuth titanate Bi4-xNdxTi3O12 were synthesized by sol-gel process and thin films were deposited on Pt substrate (Pt/TiO2/SiO2/Si) by spin coating. Thin films, characterized by X-ray diffraction and Raman spectroscopy, shows complete solid solution up to the composition x < 1. Initial results indicate that the ferroelectric polarization increases with increasing Nd content in the film with 2Pr = 50μC/cm2 for x = 0.46, which may have application in non-volatile ferroelectric memory devices.

Phase Development and Dielectric Properties of 0.98BaTiO3-0.02Ba (Mg1/3Nb2/3) O3 Ceramic

2011 ◽  
Vol 700 ◽  
pp. 58-62
Author(s):  
Rachanusorn Roongtao ◽  
Supagorn Rugmai ◽  
Wanwilai C. Vittayakorn
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Loss Factor ◽  
X Ray Diffraction ◽  
Phase Purity ◽  
X Ray ◽  
Phase Development ◽  
Scanning Electron

The 0.98BaTiO3-0.02Ba (Mg1/3Nb2/3) O3ceramics has been synthesized through a conventional mixed-oxide by using BT nanopowder and BMN micropowder. The phase purity of the powders and the ceramics was examined using X-ray diffraction (XRD). The 0.98BT-0.02BMN powders were sintered to 92% of the theoretical density at a temperature of 1300 °C for 2 h. The microstructure of the sintered surface was investigated using scanning electron microscopy (SEM). The dielectric constant (εr) and loss factor (tanδ) of the sintered pellets at Curie temperture were 3000 and 0.015, respectively.

Preparation and Properties of CCTO-BCTO Ceramics with Ultrahigh Dielectric Constant

2013 ◽  
Vol 760-762 ◽  
pp. 705-708
Author(s):  
La Chen ◽  
Wei Li ◽  
Zhao Xian Xiong ◽  
Chun Xiao Song ◽  
Hong Qiu
Keyword(s):  
Electron Microscopy ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
X Ray Diffraction ◽  
Optimum Amount ◽  
Conventional Solid State Reaction ◽  
X Ray ◽  
Impedance Characteristics ◽  
Lcr Meter ◽  
Scanning Electron

Ceramics of (1-x)CaCu3Ti4O12-xBi2/3Cu3Ti4O12, i.e., CCTO-BCTO, with x=0, 0.01, 0.1 and 0.25, respectively, were prepared via the conventional solid-state reaction. The phase structure of the ceramics was identified by X-ray diffraction. The microstructure of the sample was observed with scanning electron microscopy. Dielectric properties and impedance spectroscopy were measured using a LCR Meter, in which 0.9CCTO-0.1BCTO displayed highest dielectric constant (584108) and lowest dielectric loss (0.42) at 1kHz among the four kinds of specimens. Based on series of experimental results, an optimum amount of x was able to improve the dielectric properties of CCTO-BCTO, through adjusting the impedance characteristics of the grain and grain boundary.

Sol-Gel Synthesis and Characterization of Nanocrystalline Bi4Ti3O12 Powders

2014 ◽  
Vol 997 ◽  
pp. 359-362 ◽  
Author(s):  
Chun Hong Ma ◽  
Xue Lin ◽  
Liang Wang ◽  
Yong Sheng Yan
Keyword(s):  
Phase Inversion ◽  
Bismuth Titanate ◽  
Sol Gel ◽  
Tetrabutyl Titanate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Sol Gel Synthesis ◽  
Source Materials

Nanocrystalline bismuth titanate (Bi4Ti3O12; BTO) powders were successfully prepared by the sol-gel method, using bismuth nitrate (Bi(NO3)3·5H2O) and tetrabutyl titanate (Ti(OC4H9)4) as source materials, acetic anhydride and ethanediol as solvents. The thermal decomposition and phase inversion process of the gel precursors were studied by using differential thermal analysis (DTA). The crystal structures and microstructures of BTO powders were investigated by using x-ray diffraction (XRD), and transmission electron microscope (TEM). The crystallization of amorphous bismuth titanate has been discussed. The effect of sintering temperature on the structure and morphology of BTO was investigated. At 644 oC and above, BTO powder undergoes a phase transformation from tetragonal to orthorhombic. At 900 oC, the purified orthorhombic BTO nanocrystals were obtained.

Correlation between the dielectric constant and X-ray diffraction pattern of Si-O-C thin films with hydrogen bonds

2004 ◽  
Vol 468 (1-2) ◽  
pp. 316-321 ◽  
Author(s):  
Teresa Oh ◽  
Kyoung Suk Oh ◽  
Kwang-Man Lee ◽  
Chi Kyu Choi
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Hydrogen Bonds ◽  
Diffraction Pattern ◽  
X Ray Diffraction ◽  
X Ray

Ferroelectric Thin Films of Bismuth Titanate Prepared by Mocvd

1991 ◽  
Vol 243 ◽  
Author(s):  
H. Wang ◽  
L. W. Fu ◽  
S. X. Shang ◽  
S. Q. Yu ◽  
X. L. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Bismuth Titanate ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Dispersion Analysis ◽  
Ferroelectric Thin Films ◽  
Tetrabutyl Titanate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Mocvd Technique

AbstractThe ferroelectric thin films of bismuth titanate (Bi4Ti3O12) have been prepared by metalorganic chemical vapor deposition ( MOCVD) technique at atmosphere. The triphenyl bismuth (Bi(CaH5 ) 3)and tetrabutyl titanate (C16H36O4Ti) were used as precursors. Dense Bi4Ti3 O12 films with smooth shinning surface have been grown on Si( 100) substrates at 550°C whithout postannealing. The as- grown films were characterized by X-ray diffraction analysis (XRD), scanning electron microscopy (SEM) and energy dispersion analysis ( EDAX). The films showed well-ordered crystallinity with an (001)preffered orientation. The influence of growth parameters on deposition rate, composition and morphology of as-grown films was also discussed.

scholarly journals Study of structural and dielectric properties of Nickel-doped BaTiO3 material

2019 ◽  
Vol 8 (3) ◽  
pp. 228-233
Author(s):  
Hafes Ed-Dnoub ◽  
Ouafae El Ghadraoui ◽  
Mohammed Zouhairi ◽  
Ahmed Harrach ◽  
Tajeddine Lamcharfi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Electron Microscope ◽  
Transition Temperature ◽  
Dielectric Properties ◽  
Scanning Electron Microscope ◽  
Frequency Range ◽  
X Ray Diffraction ◽  
X Ray ◽  
Perovskite Type ◽  
Scanning Electron

In this work, the effect of nickel (Ni) insertion on the structural and dielectric properties of BaTiO3 material was investigated. A series of powders of composition Ba1-xNixTiO3 (x = 0, 0.05, 0.1, 0.15 and 0.20) were synthesized by solid method. The analysis by X-Ray Diffraction (XRD) shows that the obtained compounds crystallize in a phase of perovskite type. All the peaks are indexed in a phase of quadratic symmetry. Characterization by the Scanning Electron Microscope (SEM) indicates a heterogeneous microstructure of the grains. The study by spectroscopy of impedance in the frequency range [500Hz-1MHz] highlighted the effect of the nickel insertion on the transition temperature and the dielectric constant value.

TRANSPORT PROPERTIES OF THERMALLY EVAPORATED In2Se3 THIN FILMS

2009 ◽  
Vol 16 (05) ◽  
pp. 723-729 ◽  
Author(s):  
D. NITHYAPRAKASH ◽  
B. PUNITHAVENI ◽  
J. CHANDRASEKARAN
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Ac Conductivity ◽  
Thermal Evaporation ◽  
Frequency Range ◽  
X Ray Diffraction ◽  
Cbh Model ◽  
X Ray ◽  
Correlated Barrier Hopping ◽  
Tan Δ

Thin films of In2Se3 were prepared by thermal evaporation. X-ray diffraction indicated that the as-grown films were amorphous in nature and became polycrystalline γ-In2Se3 films after annealing. The ac conductivity and dielectric properties of In2Se3 films have been investigated in the frequency range 100 Hz–100 kHz. The ac conductivity σ ac is found to be proportional to ωn where n < 1. The temperature dependence of both ac conductivity and the parameter n is reasonably well interpreted by the correlated barrier hopping (CBH) model. The values of dielectric constant ε and loss tangent tan δ were found to increase with frequency and temperature. The ac conductivity of the films was found to be hopping mechanism. In I–V characteristic for different field and temperature were studied and it has been found that the conduction process is Poole–Frenkel type.

scholarly journals Domain and lattice contributions to dielectric and piezoelectric properties of Pb(Zrx, Ti1−x)O3 thin films as a function of composition

1999 ◽  
Vol 14 (11) ◽  
pp. 4307-4318 ◽  
Author(s):  
S. Hiboux ◽  
P. Muralt ◽  
T. Maeder
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Domain Wall ◽  
Diffraction Analysis ◽  
Piezoelectric Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited ◽  
Dielectric And Piezoelectric Properties

In situ reactively sputter deposited, 300-nm-thick Pb(Zrx, Ti1−x)O3 thin films were investigated as a function of composition, texture, and different electrodes (Pt,RuO2).X-ray diffraction analysis, ferroelectric, dielectric, and piezoelectric measurements were carried out. While for dielectric properties bulklike contributions from lattice as well as from domains are observed, domain wall contributions to piezoelectric properties are very much reduced in the morphotropic phase boundary (MPB) region. Permittivity and d33 do not peak at the same composition; the MPB region is broadened up and generally shifted to the tetragonal side.

Three-Step Deposition Method for Improvement of the Dielectric Properties of BST Thin Films

2012 ◽  
Vol 1397 ◽  
Author(s):  
H. Liu ◽  
V. Avrutin ◽  
C. Zhu ◽  
J.H. Leach ◽  
E. Rowe ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Step Method ◽  
Bst Thin Films ◽  
Different Temperatures ◽  
Different Strains ◽  
High Dielectric

ABSTRACTEpitaixal Ba0.5Sr0.5TiO3 (BST) thin films were grown on SrTiO3 (STO) and DyScO3 substrates by radio-frequency magnetron sputtering system using three-step method which involves a relatively low-temperature (573-773 K) growth of a BST interlayer sandwiched between two BST layers deposited at a high substrate temperature of 1068 K. X-ray diffraction measurement showed different strains on the films with interlayers grown at different temperatures. Post-growth thermal treatment reduced film strain to a great extent (the film strain of a tri-layer film with a 773 K grown interlayer is only -0.001). Comparing with the control films grown at high temperature, three-step technique improved the dielectric properties, especially increased dielectric constant by 60% for BST/STO and 31% for BST/DyScO3, respectively. High dielectric constant of 1631.4 and its tuning of 36.7% were achieved on the BST/STO with an interlayer grown on 773 K.

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