Oxygen-Related Defects in Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
J. Lennart Lindström ◽  
Bengt G. Svensson
Keyword(s):  
Oxygen Atom ◽  
Electron Irradiation ◽  
Thermal Treatments ◽  
Interstitial Oxygen ◽  
Unirradiated Sample ◽  
Temperature Range ◽  
Oxygen Precipitation ◽  
Oxygen Defects

ABSTRACTIn this review we focus on oxygen-related defects created by electron irradiation (vacancy-oxygen defects) and subsequent thermal treatments. The annealing of the vacancy-oxygen pair (VO-center) at 300–350 °C is discussed as well as results from the formation and annealing of the successors to VO, the VO2 and VO3-centers. It -s found that VO2 is formed by diffusion of a vacancy-oxygen pair to an interstitial oxygen atom. It is suggested that VO3 is formed by the diffusion of interstitial oxygen to a VO2-center (in the temperature range 450–485 °C). At continued annealing at these temperatures VO3 is transferred to a new defect VO4 by attaching one more oxygen. Simultaneously thermal donors are developing in a normal way i.e. as in an unirradiated sample. It is therefore concluded that VO2 is not an important core for thermal donors but a possible nucleus for oxygen precipitation.

Effect of Annealing Temperature on Oxygen Precipitation in Fast Neutron Irradiated CZ-Si

2013 ◽  
Vol 320 ◽  
pp. 403-406
Author(s):  
Qiao Yun Ma ◽  
Zhan Kai Li
Keyword(s):  
Fast Neutron ◽  
Annealing Temperature ◽  
Optical Microscope ◽  
Effect Of Temperature ◽  
Interstitial Oxygen ◽  
Temperature Range ◽  
Oxygen Precipitation ◽  
Lower Temperature Range ◽  
Lower Temperature ◽  
Induced Defects

The effect of annealing temperature on oxygen precipitation was investigated in various dose fast neutron irradiated Czochralski silicon (CZ-Si). Fourier Transform Infrared Absorption Spectrometer (FTIR) was used to measure the concentration of interstitial oxygen ([Oi]). Bulk microdefects (BMDs) were observed by optical microscope. The behavior of oxygen precipitation depends on the annealing temperature and the concentration of irradiation-induced defects. The mount of oxygen precipitates of irradiated samples is more than that in non-irradiation samples and increases with increasing the irradiation dose. Because of the effect of temperature on critical radius rcand the oxygen diffusivity, oxygen precipitation increase with the increase of temperature at the studied lower temperature range, while decrease with the increase of temperature at the studied higher temperature range. High density dislocation and stacking faults generate in irradiated sample.

Identification of An Interstitial Carbon – Interstitial oxygen Complex in Silicon

1987 ◽  
Vol 104 ◽  
Author(s):  
J. M. Trombetta ◽  
G. D. Watkins
Keyword(s):  
Carbon Atom ◽  
Oxygen Atom ◽  
Lattice Relaxation ◽  
Luminescence Spectra ◽  
Interstitial Oxygen ◽  
Epr Spectrum ◽  
Interstitial Carbon ◽  
Oxygen Complex ◽  
Interaction Tensor ◽  
Carbon Interstitial

ABSTRACTThe Si-G15 EPR spectrum and the 0.79eV “C-line” luminescence spectra in silicon are shown to arise from an interstitial carbon - interstitial oxygen complex. The g-tensor and 13C hyperfine interaction tensor indicate the structure in the vicinity of the carbon atom while stress alignment studies reveal the configuration near the oxygen atom. The pairing of the two impurities leads to a lattice relaxation which serves to stabilize the complex against dissociation.

Kinetic Model of Thermal Donor Evolution

1997 ◽  
Vol 469 ◽  
Author(s):  
K. F. Kelton ◽  
R. Falster
Keyword(s):  
Interstitial Oxygen ◽  
Oxygen Loss ◽  
Free Oxygen ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Cluster Evolution ◽  
Oxygen Precipitation ◽  
High Diffusion Rate ◽  
Normal Diffusion ◽  
Small Clusters

ABSTRACTKinetic aspects of thermal donor (TD) formation in Czochralski silicon are shown to be consistent with the evolution of small oxygen clusters, as described within the classical theory of nucleation. Predictions for TD generation and interstitial oxygen loss are presented. Favorable agreement with experimental data requires that the rate constants describing cluster evolution be increased over those expected for a oliffusion-limited flux based on a normal diffusion coefficient for oxygen in silicon. This may signal an anomalously high diffusion rate for temperatures less than 500°C, as has been suggested by others. However, it may instead signal an enhanced concentration of free oxygen near clusters smaller than the critical size for nucleation. This is expected when the interfacial attachment rates become comparable with the rates at which oxygen atoms arrive in the vicinity of the sub-critical clusters. The link between thermal donor generation and oxygen precipitation processes demonstrated here provides a consistent framework for better understanding and controlling oxygen precipitation in silicon. Further, the kinetic TD generation and oxygen loss data provide a new window into the dynamical processes for small clusters, which underlie all nucleation phenomena.

EXAFS evidence of interstitial oxygen defects in Nd2CuO4+δ

1995 ◽  
Vol 246 (3-4) ◽  
pp. 345-350 ◽  
Author(s):  
P. Ghigna ◽  
G. Spinolo ◽  
A. Filipponi ◽  
A.V. Chadwick ◽  
P. Hanmer
Keyword(s):  
Interstitial Oxygen ◽  
Oxygen Defects

Effect of Annealing Temperature on the Properties of Silicon Crystal

2011 ◽  
Vol 415-417 ◽  
pp. 1323-1326 ◽  
Author(s):  
Qiu Yan Hao ◽  
Xin Jian Xie ◽  
Bing Zhang Wang ◽  
Cai Chi Liu
Keyword(s):  
Annealing Temperature ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Silicon Crystal ◽  
Minority Carrier Lifetime ◽  
Interstitial Oxygen ◽  
Oxygen Precipitation ◽  
Oxygen Donor ◽  
Infrared Spectrometer ◽  
Effect Of Oxygen

In order to investigate the performance of silicon single crystal depended on the annealing temperature, the minority carrier lifetime, the resistivity and oxygen concentration after different temperature annealing in Ar ambient were examined. And the effect of oxygen and related defects formed during annealed on the minority carrier lifetime were analyzed by microwave photoconductivity method, Fourier transform infrared spectrometer and four-probe measurement. The results indicate that after 450°C annealing for 30h, the resistivity and minority carrier lifetime of silicon increase significantly, while the concentration of interstitial oxygen decreases. After the annealing at 650°C, oxygen donor can be removed and the resistivity and the minority carrier lifetime decrease. During the high-temperature (above 650°C) annealing, the oxygen precipitation can decrease the minority carrier lifetime silicon.

The Effect of D-Defect in Silicon Single Crystal on Oxygen Precipitation

1992 ◽  
Vol 262 ◽  
Author(s):  
I. Fusegawa ◽  
N. Fujimaki ◽  
H. Yamagishi
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystals ◽  
Thermal Process ◽  
Flow Patterns ◽  
Optical Microscope ◽  
Silicon Single Crystal ◽  
Thermal Treatments ◽  
Oxygen Precipitation ◽  
Predominant Factor

ABSTRACTWe investigated the effect of D-defect in CZ silicon single crystals on the oxygen precipitation by two-step thermal treatments consisting of the first annealing in nitrogen ambient at 1073K and the second annealing in dry oxygen ambient at 1273K. The density of D-defect was measured by counting ‘flow patterns’ using an optical microscope after preferential etching in Secco's solution for 30 minutes. It was found that the amount of oxygen precipitation along the growth axis was not affected by D-defect. The predominant factor of the oxygen precipitation after the two-step thermal process is the nuclei of oxygen precipitation generated around 723K during CZ crystal growth.

A Hvem Study of the Electron Irradiated Defects in Nitrogen Doped FZ-Si Single Crystal

1989 ◽  
Vol 163 ◽  
Author(s):  
Gao Yuzun ◽  
T. Takeyama
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Electron Irradiation ◽  
Defect Density ◽  
Migration Energy ◽  
Nitrogen Doped ◽  
Temperature Range ◽  
Transmission Electron ◽  
Excellent Property ◽  
P Type

AbstractHigh voltage transmission electron microscope (JEM-1000) has been used to investigate the electron irradiated defects in in p-type FZ-Si and nitrogen doped p-type FZ-Si. It was found that when the irradiated conditions were the saie ,the irradiated defects were easier to be produced in the FZ-Si than in nitrogen doped FZ-Si in the temperature range 573-773 K. The defect density was higher in the foraer. The migration energy of the vacancies in the temperature range 573-773 K was 0.34 and 0.58 eV for FZ-Si and nitrogen doped FZ-Si respectively. It seems to indicate that there was some interaction between vacancies and nitrogen atoms in the nitrogen doped FZ-Si. The results proved that the nitrogen doped FZ-Si has excellent property against electron irradiation.

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