Magnetic Resonance of Oxygen-Related Defects in Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
J. Michel ◽  
J. R. Niklas ◽  
J.-M. Spaeth

ABSTRACTThe electron spin resonance (ESR) of a number of vacancy-oxygen complexes created in electron irradiated Si containing oxygen is briefly reviewed. In these centers the unpaired spin density is highly localised (50–70%) on two Si sites within the complex. The ESR spectra of several paramagnetic thermal donors (TD+) formed by annealing oxygen-rich Si at 450 °C for one to several hundred hours are reviewed as well as recent experiments under uniaxial stress from which for the ground state a 2 valley effective mass-like wavefunction was derived. Results of electron nuclear double resonance (ENDOR) experiments on the TD+ ESR line “NL8” are presented for the first time. They reveal that all TD's identified in IR-spectroscopy are superimposed in the NL8 ESR line and that upon growth of the TD the structure of the core and the symmetry of the TD's is not changed. The hyperfine interactions with up to 7 shells of Si nuclei of 5 TD+'s were determined. Their size and tensor orientations are consistent with the two-valley effective mass-like wavefunction. 4 TD's identified in ENDOR could be correlated with IR-bands from growth kinetics. Although the ENDOR experiments so far do not yet lead to a detailed TD model, the model possibilities are narrowed down considerably by these results. The core must consist of nuclei with very low magnetic abundancy. It is tentatively suggested, that the core contains an O2 molecule.

1987 ◽  
Vol 104 ◽  
Author(s):  
J.-M. Spaeth ◽  
A. Gorger ◽  
D. M. Hofmann ◽  
B. K. Meyer

ABSTRACTWith optically detected electron spin resonance (ODESR) and electron nuclear double resonance (ODENDOR) the following deep level defects in s.i. LEC-grown GaAs were investigated: EL2 defects in undoped GaAs and VGa2+ and VGa3+ defects in V-doped GaAs. This paper summarizes the major results: (i) the double donor defect EL2 in an (AsGa-Asi+) pair defect, which is distributed rather homogeneously across an as-grown wafer. After inverted thermal conversion treatment it is destroyed, and 3 new paramagnetic defects appear. EL2 is recovered after annealing at ca. 800 °C, while the 3 new defects disappear. (ii) A new ESR spectrum due to VGa2+ was measured. It is shown for the first time for a 3dn impurity in semiconductors that VGa3+(3d3)is in a low spin state (S = 1/2) in accordance with recent theoretical predictions. A deep level defect at Ev + (0.2–0.4) eV is discovered, which is probably the defect needed for explaining the s.i. properties of V-doped GaAs.


1987 ◽  
Vol 104 ◽  
Author(s):  
Jürgen Michel ◽  
J. R. Nikias ◽  
J.-M. Spaeth

ABSTRACTResults of new electron nuclear double resonance (ENDOR) experiments on the thermal donors (NL8) in silicon are presented. Hyperfine interactions (hf) with 17O were observed. Two types of oxygen were found, of each type there are at least two oxygen atoms. The size and tensor orientations of their hf interactions are consistent with the presence of four oxygen atoms with approx. <111>-symmetry in the core of the thermal donors.


1986 ◽  
Vol 69 ◽  
Author(s):  
Martin Stutzmann ◽  
David K. Biegelsen

AbstractThe hyperfine interaction between electronic and nuclear spins in hydrogenated amorphous silicon has been observed for the various paramagnetic defects in this material by electron spin resonance (ESR) and electron nuclear double resonance (ENDOR). The large hyperfine interaction between dangling bonds and 29Si as well as between donor electrons and 31p or 75 As nuclei can be resolved in ESR and provides direct information about the structure of the underlying electronic states. The smaller dipolar coupling of all paramagnetic states to more distant nuclei leads to an ENDOR response near the free nuclear resonance frequencies, which can be used to study the coupling of the electronic and nuclear spin system to the lattice phonons and to each other.


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