Analysis of the Crystallization Kinetics and Microstructure of Polycrystalline Sige Films by Optical Techniques

1999 ◽  
Vol 588 ◽  
Author(s):  
J. Olivares ◽  
P. Martín ◽  
A. Rodríguez ◽  
J. Sangrador ◽  
O. Martínez ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Crystallization Kinetics ◽  
Solid Phase ◽  
Grain Morphology ◽  
Optical Techniques ◽  
X Ray ◽  
Transmission Electron ◽  
Uv Reflectance ◽  
The One ◽  
Means Of Transmission

AbstractIn this work, two optical techniques, Raman spectroscopy and ultraviolet reflectance, have been used to characterize the solid phase crystallization kinetics and the microstructure of SiGe films deposited by LPCVD on oxidized Si wafers. The results have been compared to those obtained by X-ray diffractometry. The Ge fraction of the films (x) was in the 0−0.38 interval. The samples were crystallized at temperatures ranging from 525 to 600 °C. The crystallization kinetics follows Avrami's model. Two different behaviours have been observed depending on the Ge fraction of the films and the crystallization temperature: a) Either the three experimental techniques yield similar results, or b) the crystallization process, as monitored by UV reflectance and Raman spectroscopy, exhibits a greater incubation time than the one obtained if X-ray diffractometry is used. The results are discussed in terms of the identification of the nucleation sites, taking into account the probe depth of the different techniques and the preferred orientations of the grains. These techniques have also been used to characterize the presence of defects, the overall crystallinity and the surface roughness of the fully crystallized films. The results are correlated to the grain morphology and grain size, obtained by means of transmission electron microscopy.

Crystallization Behavior of the Amorphous Si1-xGex Films Deposited on SiO2 by Molecular Beam Epitaxy(MBE)

1994 ◽  
Vol 345 ◽  
Author(s):  
Chang-Won Hwang ◽  
Myung-Kwan Ryu ◽  
Ki-Bum Kim ◽  
Seung-Chang Lee ◽  
Chang-Soo Kim
Keyword(s):  
Crystallization Behavior ◽  
Solid Phase ◽  
Grain Morphology ◽  
Alloy Film ◽  
Solid Phase Crystallization ◽  
Tem Analysis ◽  
Thermal Budget ◽  
X Ray ◽  
Transmission Electron ◽  
Amorphous Si

AbstractWe have investigated solid phase crystallization behavior of the MBE grown amorphous Si1-xGex (x=0 to 0.53) layers using x-ray diffractometry and transmission electron microscopy (TEM). It is found that the thermal budget of the solid phase crystallization of the film is significantly reduced as the Ge concentration in the film is increased. In addition, we find that the amorphous Si film crystallizes with a strong (111) texture while the Si1-xGex alloy film crystallizes with a (311) texture suggesting that the solid-phase crystallization mechanism is changed by the incorporation of Ge. TEM analysis of the crystallized film shows that the grain morphology of the pure Si is an elliptical or a dendrite shape with a high density of microtwins in the grains while that of the Si0.47 Ge0.53 alloy is more or less equiaxed shape with a much low density of crystalline defects in them.

Structural changes in titanium dioxide nanocrystals during plastic deformation

2005 ◽  
Vol 38 (5) ◽  
pp. 749-756 ◽  
Author(s):  
Ulrich Gesenhues
Keyword(s):  
Structural Changes ◽  
Crystal Size ◽  
Lower Layer ◽  
High Energy ◽  
Primary Crystal ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Hall Method ◽  
Means Of Transmission

The polygonization of 200 nm rutile crystals during dry ball-milling at 10gwas monitored in detail by means of transmission electron microscopy (TEM) and X-ray diffraction (XRD). The TEM results showed how to modify the Williamson–Hall method for a successful evaluation of crystal size and microstrain from XRD profiles. Macrostrain development was determined from the minute shift of the most intense reflection. In addition, changes in pycnometrical density were monitored. Accordingly, the primary crystal is disintegrated during milling into a mosaic of 12–35 nm pieces where the grain boundaries induce up to 1.2% microstrain in a lower layer of 6 nm thickness. Macrostrain in the interior of the crystals rises to 0.03%. The pycnometrical density, reflecting the packing density of atoms in the grain boundary, decreases steadily by 1.1%. The results bear relevance to our understanding of plastic flow and the mechanism of phase transitions of metal oxides during high-energy milling.

Conversion of platelets into dislocation loops and voidite formation in type IaB diamonds

1995 ◽  
Vol 449 (1936) ◽  
pp. 295-313 ◽  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Local Mode ◽  
Diamond Structure ◽  
Dislocation Loops ◽  
X Ray ◽  
Regular Type ◽  
Transmission Electron ◽  
Stable Conditions ◽  
The One

Type la natural diamonds have been heated in the temperature range of 2400-2700°C under stabilizing pressures. The specimens studied are mainly regular type IaB diamonds. Transmission electron microscopy studies of treated speci­mens show that platelets are converted to interstitial ½ a 0 <011> dislocation loops; voidites are also formed. When all the platelets have been converted, the ex­perimental features associated with them also disappear, i. e. the X-ray extra reflections (spikes), the B' local-mode absorption and the lattice absorption in the one-phonon region termed the D spectrum. It is discovered that when diamonds are heated under graphite-stable rather than diamond-stable conditions, the rate of conversion is considerably enhanced; for instance, at 2650°C there is an increase in the rate of about three orders of magnitude. This enhancement is considered to be due to the instability of the diamond structure itself and a reason for this enhancement is suggested.

scholarly journals The Transport System of Nacre Components through the Surface Membrane of Gastropods

2016 ◽  
Vol 672 ◽  
pp. 103-112 ◽  
Author(s):  
Elena Macías-Sánchez ◽  
Antonio G. Checa ◽  
Marc G. Willinger
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Calcium Carbonate ◽  
Lamellar Structure ◽  
Surface Membrane ◽  
Organic Matrix ◽  
X Ray ◽  
Transmission Electron ◽  
Means Of Transmission ◽  
Electron Energy Loss

The surface membrane is a lamellar structure exclusive of gastropods that is formed during the shell secretion. It protects the surface of the growing nacre and it is located between the mantle epithelium and the mineralization compartment. At the mantle side of the surface membrane numerous vesicles provide material, and at the nacre side, the interlamellar membranes detach from the whole structure. Components of nacre (glycoproteins, polysaccharides and calcium carbonate) cross the structure to reach the mineralization compartment, but the mechanism by which this occurs is still unknown. In this paper we have investigated the ultrastructure of the surface membrane and the associated vesicle layer by means of Transmission Electron Microscopy. Electron Energy Loss Spectroscopy and Energy-dispersive X-ray Spectroscopy were used for elemental analysis. The analyses revealed the concentration of calcium in the studied structures: vesicles, surface membrane, and interlamellar membranes. We discuss the possible linkage of calcium to the organic matrix.

Study on integration of aluminum-doped zinc oxide (AZO) thin films with graphene oxide (GO)

2018 ◽  
Vol 32 (19) ◽  
pp. 1840044
Author(s):  
Aditya Dalal ◽  
Animesh Mandal ◽  
Shubhada Adhi ◽  
Kiran Adhi
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Graphene Oxide ◽  
X Ray Diffraction ◽  
Visible Spectroscopy ◽  
X Ray ◽  
Transmission Electron ◽  
Vis Spectroscopy ◽  
Aluminum Doped Zinc Oxide ◽  
Uv Visible

Aluminum (0.5 at.%)-doped ZnO (AZO) thin films were deposited by pulsed laser deposition technique (PLD) in oxygen ambient of 10[Formula: see text] Torr. The deposited thin films were characterized by x-ray diffraction (XRD), photoluminescence (PL), Raman spectroscopy and uv–visible spectroscopy (UV–vis). Next, graphene oxide (GO) was synthesized by Hummers method and was characterized by XRD, UV–vis spectroscopy, Raman spectroscopy and transmission electron microscopy (TEM). Thereafter, GO solution was drop-casted on AZO thin films. These films were then characterized by Raman Spectroscopy, UV–vis spectroscopy and PL. Attempt is being made to comprehend the modifications in properties brought about by integration.

The structural changes of polycrystalline film C60/C70: Ni caused by Ni diffusion

1996 ◽  
Vol 11 (12) ◽  
pp. 3146-3151 ◽  
Author(s):  
E. Czerwosz ◽  
P. Byszewski ◽  
R. Diduszko ◽  
H. Wronka ◽  
P. Dluźewski ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Structural Changes ◽  
Thermal Conditions ◽  
Vacuum Deposition ◽  
X Ray Diffraction ◽  
Polycrystalline Structure ◽  
X Ray ◽  
Transmission Electron

C60/C70: Ni films with 1.5 wt. % Ni concentration obtained by vacuum deposition under different thermal conditions have been investigated. The structural changes of the layers were investigated by transmission electron microscopy, electron and x-ray diffraction, and Raman spectroscopy. The polycrystalline structure was detected for the layers grown at approximately 450 K on the substrate. At elevated temperature and maintained temperature gradient on the substrate during the process, the changes of the layer's structure and the formation of Ni microcrystals were observed. The Ni microcrystals (5–10 nm in the diameter) and the elongated shapes dimensioned 10 × 150 nm were perceived.

Sol-gel processing of nanocrystalline haematite thin films

1997 ◽  
Vol 12 (6) ◽  
pp. 1441-1444 ◽  
Author(s):  
L. Armelao ◽  
A. Armigliato ◽  
R. Bozio ◽  
P. Colombo
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Single Particles ◽  
X Ray ◽  
Transmission Electron ◽  
Gel Processing

The microstructure of Fe2O3 sol-gel thin films, obtained from Fe(OCH2CH3)3, was investigated by x-ray diffraction (XRD), transmission electron microscopy (TEM), and Raman spectroscopy. Samples were nanocrystalline from 400 °C to 1000 °C, and the crystallized phase was haematite. In the coatings, the α–Fe2O3 clusters were dispersed as single particles in a network of amorphous ferric oxide.

Evolution of Epitaxial SixGei1-x Alloys on Si(100) During Thermal Annealing a-Ge/Au Bilayers Deposited on Si Substrate

1992 ◽  
Vol 280 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen
Keyword(s):  
Single Crystal ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Growth Dynamics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTSolid phase epitaxial (SPE) growth of SixGei1-x alloys on Si (100) was achieved by thermal annealing a-Ge/Au bilayers deposited on single crystal Si substrate in the temperature range of 280°C to 310°C. Growth dynamics was investigated using X-ray diffraction, Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy. Upon annealing, Ge atoms migrate along the grain boundaries of polycrystalline Au and the epitaxial growth initiates at localized triple points between two Au grains and Si substrate, simultaneously incorporating a small amount of Si dissolved in Au. The Au is gradually displaced into the top Ge layer. Individual single crystal SixGei1-x islands then grow laterally as well as vertically. Finally, the islands coalesce to form a uniform layer of epitaxial SixGe1-x alloy on the Si substrate. The amount of Si incorporated in the final epitaxial film was found to be dependent upon the annealing temperature.

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