Synthesis of Passivated Metal Nanoparticles

1999 ◽  
Vol 581 ◽  
Author(s):  
Mark Green ◽  
Paul O'Brien
Keyword(s):  
Thin Films ◽  
Metal Nanoparticles ◽  
Data Storage ◽  
Potential Application ◽  
Lewis Base ◽  
Magnetic Data ◽  
Storage Devices ◽  
Nanoparticle Morphology ◽  
2D And 3D ◽  
Passivated Metal

ABSTRACTHere we report the synthesis of organically passivated nanoparticles of gold, chromium and nickel. The routes involve the reduction of a metal precursor in various Lewis base solvents, which appear to affect the final nanoparticle morphology. The preparation of highly monodispersed samples can lead to the potential for further manipulation of dots into ordered 2D and 3D arrays. These colloidal thin films and crystals have potential application in magnetic data storage devices.

Optimization of Co-Pt and Co-Cr-Pt-Ta thin films for use in magnetic data storage devices

1994 ◽  
Vol 68-69 ◽  
pp. 696-701 ◽  
Author(s):  
M.S. Miller ◽  
A.E. Schultz ◽  
Y.M. Chow ◽  
L.A. Heuer
Keyword(s):  
Thin Films ◽  
Data Storage ◽  
Magnetic Data Storage ◽  
Magnetic Data ◽  
Storage Devices

scholarly journals Nanostructured ZnFe2O4: An Exotic Energy Material

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1286
Author(s):  
Murtaza Bohra ◽  
Vidya Alman ◽  
Rémi Arras
Keyword(s):  
Data Storage ◽  
Smart Materials ◽  
Energy Demand ◽  
Ceramic Materials ◽  
Magnetic Data ◽  
Processing Route ◽  
Energy Storage Devices ◽  
Storage Devices ◽  
Reduced Toxicity ◽  
Cation Arrangement

More people, more cities; the energy demand increases in consequence and much of that will rely on next-generation smart materials. Zn-ferrites (ZnFe2O4) are nonconventional ceramic materials on account of their unique properties, such as chemical and thermal stability and the reduced toxicity of Zn over other metals. Furthermore, the remarkable cation inversion behavior in nanostructured ZnFe2O4 extensively cast-off in the high-density magnetic data storage, 5G mobile communication, energy storage devices like Li-ion batteries, supercapacitors, and water splitting for hydrogen production, among others. Here, we review how aforesaid properties can be easily tuned in various ZnFe2O4 nanostructures depending on the choice, amount, and oxidation state of metal ions, the specific features of cation arrangement in the crystal lattice and the processing route used for the fabrication.

scholarly journals Microstructural Study of CMR Films as a Function of Growth Temperature, As-Deposited and Annealed

1995 ◽  
Vol 401 ◽  
Author(s):  
M. E. Hawley ◽  
X. D. Wu ◽  
P. N. Arendt ◽  
C. D. Adams ◽  
M. F. Hundley ◽  
...  
Keyword(s):  
Data Storage ◽  
Growth Temperature ◽  
Magnetic Data ◽  
Storage Devices ◽  
Colossal Magnetoresistive ◽  
Step Flow ◽  
Transmission Electron ◽  
The Family ◽  
Complex Metal Oxides ◽  
Potential Applications

AbstractThe properties encompassed by the family of complex metal oxides span the spectrum from superconductors to insulating ferroelectrics. Included in this family are the new colossal magnetoresistive perovskites with potential applications in advanced high density magnetic data storage devices based on single or multilayer thin films units of these materials fabricated by vapor phase deposition (PVD) methods. The realization of this potential requires solving basic thin film materials problems requiring understanding and controlling the growth of these materials. Toward this end, we have grown La0.7Ca0.3MnO3 and La0.7Sr0.3MnO3 on LaAlO3 single crystal substrates by pulsed laser and RF sputter deposition at temperatures from 500° C to 900° C and annealed at over 900° C for about 10 hours. The evolution of the microstructure of these films was studied by scanning probe microscopies and transmission electron microscopy (TEM).The results of SPM characterization showed that at the lower end of the growth temperature range, the as-grown films were polygranular with grain size increasing with temperature. The 500° C as-grown films appeared to be amorphous while the 750° C film grains were layered with terrace steps often one unit cell high. In contrast, films grown at 900° C consisted of coalesced islands with some 3-D surface crystals. After annealing, all films had coalesced into very large extended layered islands. The change in microstructure was reflected in a decreased resistivity of coalesced films over their unannealed granular precursors. Previous reported work on the growth of La0.84 Sr0.16MnO3 and La0.8Sr0 2CoO3 grown demonstrated the sensitivity of the microstructure to substrate and deposition conditions. Films grown on an “accidental” vicinal surface grew by a step flow mechanism.

scholarly journals DATA STORAGE: REVIEW OF HEUSLER COMPOUNDS

SPIN ◽  
2012 ◽  
Vol 02 (04) ◽  
pp. 1230006 ◽  
Author(s):  
ZHAOQIANG BAI ◽  
LEI SHEN ◽  
GUCHANG HAN ◽  
YUAN PING FENG
Keyword(s):  
Data Storage ◽  
Giant Magnetoresistance ◽  
Functional Materials ◽  
Recent Decade ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Magnetic Data ◽  
Heusler Compounds ◽  
Storage Devices ◽  
The Family

In the recent decade, the family of Heusler compounds has attracted tremendous scientific and technological interest in the field of spintronics. This is essentially due to their exceptional magnetic properties, which qualify them as promising functional materials in various data-storage devices, such as giant-magnetoresistance spin valves, magnetic tunnel junctions, and spin-transfer torque devices. In this article, we provide a comprehensive review on the applications of the Heusler family in magnetic data storage. In addition to their important roles in the performance improvement of these devices, we also try to point out the challenges as well as possible solutions, of the current Heusler-based devices. We hope that this review would spark further investigation efforts into efficient incorporation of this eminent family of materials into data storage applications by fully arousing their intrinsic potential.

Applying NiTi Shape-Memory Thin Films to Thermomechanical Data Storage Technology

2004 ◽  
Vol 855 ◽  
Author(s):  
Wendy C. Crone ◽  
Gordon A. Shaw
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Shape Memory ◽  
Data Storage ◽  
Martensite Phase ◽  
Magnetic Data ◽  
Thermomechanical Cycling ◽  
Storage Technology ◽  
Storage Media ◽  
Theoretical Predictions

ABSTRACTAs the data storage density in cutting edge microelectronic devices continues to increase, the superparamagnetic effect poses a problem for magnetic data storage media. One strategy for overcoming this obstacle is the use of thermomechanical data storage technology. In this approach, data is written by a nanoscale mechanical probe as an indentation on a surface, read by a transducer built into the probe, and then erased by the application of heat. An example of such a device is the IBM millipede, which uses a polymer thin film as the data storage medium. It is also possible, however, to use other kinds of media for thermomechanical data storage, and in the following work, we explore the possibility of using thin film Ni-Ti shape memory alloy (SMA). Previous work has shown that nanometer-scale indentations made in martensite phase Ni-Ti SMA thin films recover substantially upon heating. Issues such as repeated thermomechanical cycling of indentations, indent proximity, and film thickness impact the practicability of this technique. While there are still problems to be solved, the experimental evidence and theoretical predictions show SMA thin films are an appropriate medium for thermomechanical data storage.

Spatial control of organic nanocrystal nucleation in sol–gel thin films for 3-D optical data storage devices or chemical multi-sensors

2005 ◽  
Vol 283 (3-4) ◽  
pp. 444-449 ◽  
Author(s):  
Estelle Botzung-Appert ◽  
Julien Zaccaro ◽  
Cécile Gourgon ◽  
Yves Usson ◽  
Patrice L. Baldeck ◽  
...  
Keyword(s):  
Thin Films ◽  
Data Storage ◽  
Sol Gel ◽  
Optical Data Storage ◽  
Optical Data ◽  
Spatial Control ◽  
Storage Devices

scholarly journals PREPARATION OF MESOSCOPIC STRUCTURE POLY METHYL METHACRYLATE THIN FILMS FOR AFM DATA STORAGE DEVICES.

2019 ◽  
Vol 2 (1) ◽  
pp. 1-3
Author(s):  
Chandar Shekar B ◽  
Sathisha S ◽  
Sulana Sundari ◽  
Sunnitha S ◽  
Sharmila C
Keyword(s):  
Thin Films ◽  
Methyl Methacrylate ◽  
Data Storage ◽  
Dip Coating ◽  
Magnetic Data ◽  
Promising Alternative ◽  
Poly Methyl Methacrylate ◽  
Mesoscopic Structure ◽  
Coating Method ◽  
Dip Coating Method

Poly methyl methacrylate (PMMA) thin films were prepared by dip coating method. Benzene was used as a solvent to prepare PMMA thin films for the time periods ranging from 1 min. to 1 h. The thickness of the films deposited was measured by using an electronic thickness measuring instrument (Tesatronic-TTD-20). Fourier Transform Infrared spectrum was used to identify the above said films. X-ray diffraction spectra indicated the predominantly amorphous nature of the films. Surface morphology of the coated films studied by using scanning electron microscope (SEM) indicated the absence of any pits, cracks and pin holes in the surface. Both as grown and annealed films showed smooth and amorphous structures. The closer SEM inspection revealed the presence of self assembled mesoscopic cells. The mesoscopic structure PMMA thin films could be used as an AFM-based data storage which is promising alternative to conventional magnetic data storage because it offers great potential for considerable storage density improvements.

A high bandwidth piezoelectric suspension for high track density magnetic data storage devices

1998 ◽  
Vol 34 (4) ◽  
pp. 1907-1909 ◽  
Author(s):  
Wei Guo ◽  
Zhihong Wang ◽  
Xi Yao ◽  
T. Huang ◽  
Chao Bi
Keyword(s):  
Data Storage ◽  
Magnetic Data Storage ◽  
Track Density ◽  
Magnetic Data ◽  
Storage Devices ◽  
High Bandwidth ◽  
High Track
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