Controlled Growth of Amorphous Silicon Nanowires Via a Solid-Liquid-Solid (SLS) Mechanism

1999 ◽  
Vol 581 ◽  
Author(s):  
H. F. Yan ◽  
Y. J. Xing ◽  
Q. L. Hang ◽  
D. P. Yu ◽  
J. Xu ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Nanowires ◽  
Whisker Growth ◽  
Average Diameter ◽  
Si Substrate ◽  
Large Area ◽  
Vapor Liquid Solid ◽  
Silicon Source ◽  
20 Nm ◽  
Solid Liquid

ABSTRACTAmorphous silicon nanowires (a-SiNW's) with average diameter around 20 nm were synthesized at about 950° C under an Ar/H2 atmosphere on large area of a (11) Si substrate without supplying any gaseous or liquid Si sources. The Si substrate, deposited with a layer of Ni of about 40 nm thick, served itself as a silicon source for the growth of the a-SiNWs. Different from the well-known vapor-liquid-solid (VLS) for conventional whisker growth, it was found that growth of the a-SiNWs was controlled by a solid-liquid-solid mechanism, which is analogous to the VLS model.

Oriented Si nanowires grown via an SLS mechanism

1999 ◽  
Vol 581 ◽  
Author(s):  
Y. J. Xing ◽  
Z. H. Xi ◽  
Q. L. Hang ◽  
H. F. Yan ◽  
S. Q. Feng ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Silicon Nanowires ◽  
Large Scale ◽  
Whisker Growth ◽  
Ambient Pressure ◽  
Si Nanowires ◽  
Vapor Liquid Solid ◽  
Selected Area Electron Diffraction ◽  
Uniform Diameter ◽  
Solid Liquid

ABSTRACTHighly oriented silicon nanowires were grown on Si (111) substrate via a solid-liquid-solid (SLS) mechanism. Unlike the well known vapor-liquid-solid (VLS) mechanism of whisker growth, no gaseous or liquid Si source was supplied during growth. Ni was used as the liquid forming agent and mixture of H2 and Ar was introduced in the experiment. Oriented silicon nanowires grew at 950°C and the ambient pressure kept at about 200 Torr. The oriented silicon nanowires have a length around I il m and uniform diameter about 25nm. Selected area electron diffraction showed that silicon nanowires are completely amorphous. The approach used here is simple and controllable, and may be useful in large-scale synthesis of various nanowires.

scholarly journals Microspheres for the Growth of Silicon Nanowires via Vapor-Liquid-Solid Mechanism

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Arancha Gómez-Martínez ◽  
Francisco Márquez ◽  
Eduardo Elizalde ◽  
Carmen Morant
Keyword(s):  
Silicon Nanowires ◽  
Vapor Deposition ◽  
Gold Catalyst ◽  
Chemical Vapor ◽  
Carbon Microspheres ◽  
Vapor Liquid Solid ◽  
Thermal Chemical Vapor Deposition ◽  
Silicon Source ◽  
Vapor Liquid Solid Mechanism ◽  
Vapor Liquid

Silicon nanowires have been synthesized by a simple process using a suitable support containing silica and carbon microspheres. Nanowires were grown by thermal chemical vapor deposition via a vapor-liquid-solid mechanism with only the substrate as silicon source. The curved surface of the microsized spheres allows arranging the gold catalyst as nanoparticles with appropriate dimensions to catalyze the growth of nanowires. The resulting material is composed of the microspheres with the silicon nanowires attached on their surface.

Formation of Ordered Si Nanowires Arrays on Si Substrate

2013 ◽  
Vol 854 ◽  
pp. 83-88 ◽  
Author(s):  
A.A. Evtukh ◽  
Anatoly Druzhinin ◽  
I. Ostrovskii ◽  
A. Kizjak ◽  
A. Grigoriev ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Kinetic Coefficient ◽  
Average Diameter ◽  
Si Nanowires ◽  
Si Substrate ◽  
Cvd Method ◽  
Good Accordance ◽  
Vertically Aligned ◽  
Kinetics Of ◽  
Axial Growth

The paper deals with investigation of silicon nanowires formation by LP CVD method on Si substrate using gold films as a mask. The average diameter of Si nanowires grown by LP CVD was about 60 nm. It was shown that using of Si-Au droplets as the mask allows to obtain vertically aligned silicon nanowires with average diameter of about 60 nm. The kinetics of radial and axial growth was investigated, the growth rates and kinetic coefficient of growth were calculated, which showed a good accordance to experimental data.

Polycrystalline Silicon Layers for Shallow Junction Formation: Phosphorus Diffusion from In Situ Spike-Doped Chemical Vapor Deposited Amorphous Silicon

1994 ◽  
Vol 343 ◽  
Author(s):  
D. Krüger ◽  
J. Schlote ◽  
W. Röpke ◽  
R. Kurps ◽  
Ch. Quick
Keyword(s):  
Amorphous Silicon ◽  
Structural Changes ◽  
Silicon Layer ◽  
Chemical Vapor ◽  
Heat Treatments ◽  
Si Substrate ◽  
Diffusion Limited ◽  
Pile Up ◽  
20 Nm

ABSTRACTShallow and lateral homogeneous delineated n+p-junctions were formed utilizing solid source diffusion from a deposited amorphous silicon layer with an in situ imbedded ultrathin phosphorus-rich zone. SIMS, AES, and TEM investigations were carried out to analyze the dopant behavior in correlation to morphological and structural changes during subsequent heat treatments. After heat treatments up to 950°C the layer remained flat, surface roughness was found to be less than 3 nm. Dopant pile up at the Si-layer/Si-substrate interface was observed and interpreted on the basis of segregation phenomena. From the time dependence the P segregation-pile-up was found to be diffusion limited except for a small starting period. The dopant concentration in the Si-substrate drops down over more than 2 orders of magnitude in a thickness range less than 20 nm.

Growth of amorphous silicon nanowires via a solid–liquid–solid mechanism

2000 ◽  
Vol 323 (3-4) ◽  
pp. 224-228 ◽  
Author(s):  
H.F Yan ◽  
Y.J Xing ◽  
Q.L Hang ◽  
D.P Yu ◽  
Y.P Wang ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Nanowires ◽  
Solid Liquid

Computer simulation study about the dependence of amorphous silicon photonic waveguides efficiency on the material quality

2020 ◽  
Vol 90 (3) ◽  
pp. 30502
Author(s):  
Alessandro Fantoni ◽  
João Costa ◽  
Paulo Lourenço ◽  
Manuela Vieira
Keyword(s):  
Amorphous Silicon ◽  
High Throughput Screening ◽  
Simulation Analysis ◽  
Low Cost ◽  
Deposition Process ◽  
Large Area ◽  
Sidewall Roughness ◽  
Sensing Applications ◽  
Fabrication Defects ◽  
The Impact

Amorphous silicon PECVD photonic integrated devices are promising candidates for low cost sensing applications. This manuscript reports a simulation analysis about the impact on the overall efficiency caused by the lithography imperfections in the deposition process. The tolerance to the fabrication defects of a photonic sensor based on surface plasmonic resonance is analysed. The simulations are performed with FDTD and BPM algorithms. The device is a plasmonic interferometer composed by an a-Si:H waveguide covered by a thin gold layer. The sensing analysis is performed by equally splitting the input light into two arms, allowing the sensor to be calibrated by its reference arm. Two different 1 × 2 power splitter configurations are presented: a directional coupler and a multimode interference splitter. The waveguide sidewall roughness is considered as the major negative effect caused by deposition imperfections. The simulation results show that plasmonic effects can be excited in the interferometric waveguide structure, allowing a sensing device with enough sensitivity to support the functioning of a bio sensor for high throughput screening. In addition, the good tolerance to the waveguide wall roughness, points out the PECVD deposition technique as reliable method for the overall sensor system to be produced in a low-cost system. The large area deposition of photonics structures, allowed by the PECVD method, can be explored to design a multiplexed system for analysis of multiple biomarkers to further increase the tolerance to fabrication defects.

Antifungal Effectiveness of Nanosilver Colloid against Rose Powdery Mildew in Greenhouses

2008 ◽  
Vol 135 ◽  
pp. 15-18 ◽  
Author(s):  
Hae Sic Kim ◽  
Hyun Suk Kang ◽  
Gyo Jin Chu ◽  
Hong Sik Byun
Keyword(s):  
Electron Microscopy ◽  
Powdery Mildew ◽  
Colloidal Solution ◽  
Physical Method ◽  
Average Diameter ◽  
Optical Microscope ◽  
Size Analysis ◽  
Large Area ◽  
Transmission Electron ◽  
Antifungal Effects

The antifungal effectiveness against rose powdery mildew using antimicrobial nanosilver colloidal solution was investigated. Double-capsulized nanosilver was prepared by chemical reaction of silver ion with aid of physical method, reducing agent and stabilizers. The average diameter of nanosilver was about 1.5 nm. They were highly stable and very well dispersive in aqueous solution. The Transmission electron microscopy and UV-vis spectrometer were used for measurements of size analysis and their stability, respectively. The nanosilver colloidal solution of concentration of 5000 ppm was diluted in 10 ppm of 500 kg and sprayed at large area of 3306 m2polluted by rose powdery mildew. The white rose powdery mildew fade out above 95 % after 2 days and was not recurred for a week. The antifungal effects were observed by an optical microscope and photographs.

Sign in / Sign up

Export Citation Format

Share Document