Crystallization of Al-Gd-La-Ni Metallic Glasses

1999 ◽  
Vol 580 ◽  
Author(s):  
T.K. Croat ◽  
A.K. Gangopadhyay ◽  
K.F. Kelton
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Metallic Glasses ◽  
Low Temperatures ◽  
Alloy Composition ◽  
Composition Range ◽  
Scanning Calorimetry ◽  
Crystallization Sequence ◽  
Transmission Electron ◽  
Kinetics Of

AbstractThe crystallization kinetics of Al-Gd-La-Ni metallic glasses to nanostructured phases are analyzed using differential scanning calorimetry and transmission electron microscopy. In a narrow alloy composition range near Al88Gd6La2Ni4, TEM reveals an amorphous phase separation that occurs upon annealing at low temperatures prior to crystallization. Al-enriched regions, typically 40 nm in diameter, bounded by rare-earth rich regions, are visible. Upon crystallization, α-Al forms preferentially at the interface between these phase separated regions. The relevance of this crystallization sequence to previous work in Al-RE-TM glasses and to the evolution of nanoscale microstructures common in the crystallization of other metallic glasses are discussed.

Early-Stage Precipitation Phenomena and Composition-Dependent Hardening in Al-Mg-Si-(Cu) Alloys

2014 ◽  
Vol 794-796 ◽  
pp. 933-938 ◽  
Author(s):  
Vahid Fallah ◽  
Andreas Korinek ◽  
Babak Raeisinia ◽  
Mark Gallerneault ◽  
Shahrzad Esmaeili
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Early Stage ◽  
Scanning Calorimetry ◽  
Critical Knowledge ◽  
Transmission Electron ◽  
Final Microstructure ◽  
Precipitation Phenomena ◽  
Kinetics Of ◽  
Fcc Structure

Al-Mg-Si-(Cu), i.e. AA6xxx, alloys are widely used light alloys which can be effectively strengthened through precipitation hardening. The final microstructure, and thus properties, of these alloys after common artificial aging treatments are largely determined by the composition-dependent nano-scale clustering and precipitation that occur during the earliest stage of aging. Therefore, multi-length scale analysis of the earliest-stage of precipitation can provide critical knowledge in understanding the basis for the microstructural evolution during aging and attaining the desired microstructures and properties. Here, we investigate the effect of alloy composition on the evolution of early-stage clusters and precipitates during aging at 180°C using high resolution transmission electron microscopy. The results map a sequential evolution of clusters with an FCC structure but different morphology/orientation characteristics. GP-zones with structures other than FCC, also form in the early stages of aging. The composition-dependent kinetics of β” phase precipitation and hardening behavior are discussed in light of the results from differential scanning calorimetry experiments, microhardness measurements, and conventional transmission electron microscopy.

Structural Properties of Amorphous Silicon Produced by Electron Irradiation

1999 ◽  
Vol 557 ◽  
Author(s):  
J. Yamasaki ◽  
S. Takeda
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Distribution Function ◽  
Structural Properties ◽  
Electron Irradiation ◽  
Low Temperatures ◽  
Crystalline Silicon ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Means Of Transmission

AbstractThe structural properties of the amorphous Si (a-Si), which was created from crystalline silicon by 2 MeV electron irradiation at low temperatures about 25 K, are examined in detail by means of transmission electron microscopy and transmission electron diffraction. The peak positions in the radial distribution function (RDF) of the a-Si correspond well to those of a-Si fabricated by other techniques. The electron-irradiation-induced a-Si returns to crystalline Si after annealing at 550°C.

Growth kinetics of CoSi2 and Ge islands observed with in situ transmission electron microscopy

Micron ◽  
1999 ◽  
Vol 30 (1) ◽  
pp. 21-32 ◽  
Author(s):  
F.M. Ross ◽  
P.A. Bennett ◽  
R.M. Tromp ◽  
J. Tersoff ◽  
M. Reuter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Growth Kinetics ◽  
Transmission Electron ◽  
Kinetics Of

In-Situ Transmission Electron Microscopy and Computer Simulation Study of the Kinetics of Oxygen Loss in Yba2Cu3OZ

1989 ◽  
Vol 169 ◽  
Author(s):  
C. P. Burmester ◽  
L. T. Wille ◽  
R. Gronsky ◽  
B. T. Ahn ◽  
V. Y. Lee ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Computer Simulation Study ◽  
Oxygen Loss ◽  
Domain Structures ◽  
Transmission Electron ◽  
Kinetics Of ◽  
Image Simulations

AbstractHigh resolution transmission electron microscopy during in‐situ quenching of YBa2Cu3Oz is used to study the kinetics of microdomain formation during oxygen loss in this system. Image simulations based on atomic models of oxygen‐vacancy order in the basal plane of this material generated by Monte Carlo calculations are used to interpret high resolution micrographs of the structures obtained by quenching. The observed domain structures agree well with those obtained from the simualtions.

Effects of Dopants on the Nucleation and Growth of NiSi2 on Silicon

1987 ◽  
Vol 94 ◽  
Author(s):  
S. W. Lu ◽  
C. W. Nieh ◽  
J. J. Chu ◽  
L. J. Chen
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Low Temperatures ◽  
Nucleation And Growth ◽  
The Other ◽  
Size Factor ◽  
Atomic Size ◽  
Nickel Thin Films ◽  
Transmission Electron

ABSTRACTThe influences of implantation impurities, including BF2, B, F, As and P on the formation of epitaxial NiSi2 in nickel thin films on ion-implanted silicon have been investigated by transmission electron microscopy.The presence of BF2, B, and F atoms was observed to promote the epitaxial growth of NiSi2 at low temperatures. Little or no effect on the formation of NiSi2 was found in samples implanted with As or P ions.The results indicated that the influences of the implantation impurities are not likely to be electronic in origin. Good correlation, on the other hand, was found between the atomic size factor and resulting stress and NiSi2 epitaxy at low temperatures.

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