Electronic States of Self-Assembled Quantum Dots: Symmetries in a Quantum Lens

1999 ◽  
Vol 579 ◽  
Author(s):  
Arezky H. Rodríguez ◽  
C. Trallero-Giner ◽  
J. Marín-Antuña ◽  
S. E. Ulloa

ABSTRACTElectronic states in self-assembled quantum dots with a lens geometry are studied. A conformal analytical map is used to transform the quantum dot boundary into a dot with semi-spherical shape. The Hamiltonian for a carrier confined in the quantum lens is also mapped into an equivalent operator and its eigenvalues and eigenfunctions for the corresponding Dirichlet problem, of confinement by infinite walls, are analyzed. A modified Rayleigh-Schrddinger perturbation theory is developed to obtain analytical expressions for the energy levels and wavefunctions depending on the height b and radius a of the circular cross section of the spherical cap lens. Numerical calculations are shown for typical cases. The effects of decreasing rotational symmetry on the energy states and eigenfunctions of the quantum dot with lens-shape are presented: The degeneracy due to the z-component of the angular momentum m is broken for b ∦ a. Energy states and wavefunctions with m = 0 present the most pronounced influence on the b ∦ a case. Analytical expressions presented here can be used to estimate the sizes of actual self-assembled quantum dots.

2020 ◽  
Vol 8 (44) ◽  
pp. 23395-23403
Author(s):  
Wen Liu ◽  
Jujun Yuan ◽  
Youchen Hao ◽  
Hirbod Maleki Kheimeh Sari ◽  
Jingjing Wang ◽  
...  

A quantum dot-assisted self-assembled MoSe2–MoO3 heterogeneous structure is investigated for sodium/potassium storage for the first time. The quantum dot-assisted self-assembled MoSe2–MoO3 anode possesses a better electrochemical performance.


2019 ◽  
Vol 206 ◽  
pp. 639-644 ◽  
Author(s):  
Rafaela Moos ◽  
Igor Konieczniak ◽  
Graciely Elias dos Santos ◽  
Ângelo Luiz Gobbi ◽  
Ayrton André Bernussi ◽  
...  

2007 ◽  
Vol 244 (1) ◽  
pp. 53-58 ◽  
Author(s):  
C. Kristukat ◽  
A. R. Goñi ◽  
K. Pötschke ◽  
D. Bimberg ◽  
C. Thomsen

2006 ◽  
Vol 26 (5-7) ◽  
pp. 760-765 ◽  
Author(s):  
S.W. Lin ◽  
A.M. Song ◽  
M. Missous ◽  
I.D Hawkins ◽  
B. Hamilton ◽  
...  

2001 ◽  
Vol 227-228 ◽  
pp. 1132-1139 ◽  
Author(s):  
Zhan-Guo Wang ◽  
Yong-Hai Chen ◽  
Feng-Qi Liu ◽  
Bop Xu

2019 ◽  
Vol 65 (3) ◽  
pp. 231
Author(s):  
G. Linares García ◽  
And L. Meza-Montes

A theoeritical study on the effect of a magnetic field or impurities on the carries states of self-assembled quantum dots is presented. The magnetic field is applied along the growth direction of the dots, and for comparison two systems are considered, InAs embeded in GaAs, and GaN in AlN. The electronic states and energy are calculated in the framework of the k.p theory in 8 bands including the strain and piezoelectric effects. Zeeman splitting and anticrossings are observed in InAs/GaAs, while the field introduces small changes in the nitrides. It is also included a study about hidrogen-like impurities, which may be negative or positive. It is noted that depending on the type of impurity, the confinement energy of carriers is changed, and the distribution of the probability density of the carriers is affected  too.


2006 ◽  
Vol 916 ◽  
Author(s):  
Hsing-Yeh Wang ◽  
C.H. Chen ◽  
H. Niu ◽  
S.C. Wu ◽  
C.P. Lee

AbstractThe strain status of the buried InAs self-assembled quantum dot was comprehended by measurement first time. Results show the in-plane strain is compressive and lattice in the growth direction is lager than the lattice of GaAs. The strain of the sample annealed at 650 degree relaxes in the growth direction. The growth and the lateral direction become relaxed in the sample annealed at 750 degree.


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