A Model for Calculating Substrate Curvature During Coalescence of PT Islands on an Amorphous Substrate

1999 ◽  
Vol 578 ◽  
Author(s):  
M. A. Phillips ◽  
V. Ramaswamy ◽  
B. M. Clemens ◽  
W. D. Nix
Keyword(s):  
Film Growth ◽  
Film Stress ◽  
Plan View ◽  
Amorphous Substrates ◽  
Areal Fraction ◽  
Island Coalescence ◽  
Sputter Deposited ◽  
Evolution Of Microstructure ◽  
Pt Films

AbstractPrevious work using in-situ curvature measurement has shown a correlation between stress and microstructure during the early stages of thin film growth. The model presented here can be used to predict the curvature change of the substrate during part of this growth process. Curvature, and thus film stress, is measured in-situ during growth of sputter-deposited Pt on amorphous substrates. The average film stress is observed to be slightly compressive initially, followed by a change towards a tensile maximum, after which the stress becomes compressive again. Plan view TEM micrographs of Pt films of thicknesses up to 35 Å show the evolution of microstructure from isolated islands to a coalesced film. This evidence suggests that the tensile regime is due to island coalescence. The model calculates the curvature induced in a substrate during the tensile excursion associated with island coalescence, where discontinuous islands are modeled as a series of cracks in an otherwise continuous film. Quantitative measurements of island size and areal fraction covered are extracted from the TEM micrographs and used to predict the curvature during coalescence. The predicted stresses are shown to compare favorably with the measured stresses.

Stress and microstructure evolution during initial growth of Pt on amorphous substrates

2000 ◽  
Vol 15 (11) ◽  
pp. 2540-2546 ◽  
Author(s):  
M. A. Phillips ◽  
V. Ramaswamy ◽  
B. M. Clemens ◽  
W. D. Nix
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Microstructural Characterization ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Film Stress ◽  
Ex Situ ◽  
Initial Growth ◽  
Plan View ◽  
Areal Fraction

An understanding of the relationship between stress and the corresponding microstructure at various stages of thin film growth might allow prediction and control of both microstructure and film stress during thin film deposition. In the present study, a combination of in situ curvature measurement and ex situ microstructural characterization was used to make correlations between stress and microstructure for the growth of Pt on SiO2. Plan view transmission electron micrographs of Pt films with average thicknesses ranging from 3 to 35 Å show the evolution of microstructure from isolated islands to a coalesced film, in agreement with models for stress behavior during the early stages of film growth. Quantitative measurements of grain size, island size, and areal fraction covered are extracted from these micrographs and, in conjunction with an island coalescence model, used to calculate the magnitude of the tensile stresses generated during coalescence. The predicted curvature is shown to compare favorably with the measured stresses.

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

scholarly journals Thin film stress and microstructure analysis by energy-dispersive diffraction

2014 ◽  
Vol 70 (a1) ◽  
pp. C724-C724
Author(s):  
Christoph Genzel
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stress ◽  
Film Growth ◽  
High Energy ◽  
Energy Dispersive ◽  
Film Stress ◽  
Ex Situ ◽  
Near Surface

The most important advantage of energy dispersive (ED) diffraction compared with angle dispersive methods is that the former provides complete diffraction patterns in fixed but arbitrarily selectable scattering directions. Furthermore, in experiments that are carried out in reflection geometry, the different photon energies E(hkl) of the diffraction lines in an ED diffraction pattern can be taken as an additional parameter to analyze depth gradients of structural properties in the materials near surface region. For data evaluation advantageous use can be made of whole pattern methods such as the Rietveld method, which allows for line profile analysis to study size and strain broadening [1] or for the refinement of models that describe the residual stress depth distribution [2]. Concerning polycrystalline thin films, the features of ED diffraction mentioned above can be applied to study residual stresses, texture and the microstructure either in ex-situ experiments or in-situ to monitor, for example, the chemical reaction pathway during film growth [3]. The main objective of this talk is to demonstrate that (contrary to a widespread opinion) high energy synchrotron radiation and thin film analysis may fit together. The corresponding experiments were performed on the materials science beamline EDDI at BESSY II which is one of the very few instruments worldwide that is especially dedicated to ED diffraction. On the basis of selected examples it will be shown that specially tailored experimental setups allow for residual stress depth profiling even in thin films and multilayer coatings as well as for fast in situ studies of film stress and microstructure evolution during film growth.

Microstructure of YBa2Cu3O7-δ/Ag Bilayers Grown In Situ on Step-Edge SrTiO3 Substrates

1995 ◽  
Vol 401 ◽  
Author(s):  
Z. H. Gong ◽  
J. K. Grepstad ◽  
S. Andersen ◽  
A. Bardal
Keyword(s):  
Film Growth ◽  
Ybco Film ◽  
Amorphous Material ◽  
Interfacial Microstructure ◽  
High Density ◽  
Step Edge ◽  
Transmission Electron ◽  
Lattice Images ◽  
Sputter Deposited

AbstractThe microstructure of YBa2Cu3O7-δ(YBCO)/Ag bilayers sputter deposited in situ on step-edge SrTiO3 (STO) substrates, was carefully examined by transmission electron microscopy (TEM). Considerable variation in the YBCO film growth morphology is found near steps, including film protrusions beyond the step edges and film growth on slopes. Lattice images recorded near steps unveil a high density of crystalline defects in the film. An increased density of defects is also found near the substrate interface for film grown on etched STO surface. However, these defects are confined to the interface region and do not propagate beyond the scale of the STO surface roughness. Comparison of TEM lattice images of YBCO(100)/Ag and YBCO(001)/Ag junctions from the same specimen unveils a distinct difference in the interfacial microstructure of those two junctions. Whereas the former exhibits a sharp crystalline interface, the latter typically features a thin ( ∼ 20 Å ) interfacial layer of amorphous material. The YBCO film morphology and the high density of defects in the step edge region uncovered in this study suggest that manufacture of reproducible and uniform YBCO/Ag (Au)/YBCO (SNS) Josephson junctions using the step-edge technique, will prove a difficult task.

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

In situ observations of electromigration induced void behavior

1995 ◽  
Vol 53 ◽  
pp. 244-245
Author(s):  
T. Marieb ◽  
J. C. Bravman ◽  
P. Flinn ◽  
D. Gardner ◽  
M. Madden
Keyword(s):  
Electron Microscopy ◽  
Void Nucleation ◽  
Plan View ◽  
Transmission Electron ◽  
Nucleation Sites ◽  
Microelectronics Industry ◽  
In Situ Observations ◽  
Backscatter Electron Detector ◽  
Voltage Scanning

Electromigration and stress voiding have been active areas of research in the microelectronics industry for many years. While accelerated testing of these phenomena has been performed for the last 25 years[1-2], only recently has the introduction of high voltage scanning electron microscopy (HVSEM) made possible in situ testing of realistic, passivated, full thickness samples at high resolution.With a combination of in situ HVSEM and post-testing transmission electron microscopy (TEM) , electromigration void nucleation sites in both normal polycrystalline and near-bamboo pure Al were investigated. The effect of the microstructure of the lines on the void motion was also studied.The HVSEM used was a slightly modified JEOL 1200 EX II scanning TEM with a backscatter electron detector placed above the sample[3]. To observe electromigration in situ the sample was heated and the line had current supplied to it to accelerate the voiding process. After testing lines were prepared for TEM by employing the plan-view wedge technique [6].

Microstructural characterization of YBaCuO Films on LaAlO3 substrates

1989 ◽  
Vol 47 ◽  
pp. 180-181
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
N. Lewis ◽  
L. G. Turner
Keyword(s):  
Dielectric Constant ◽  
Single Crystal ◽  
Film Growth ◽  
Microstructural Characterization ◽  
Lattice Parameter ◽  
Film Plane ◽  
Substrate Material ◽  
High Loss ◽  
Amorphous Substrates ◽  
High Dielectric

There have been a large number of recent studies of the growth of Y-Ba-Cu-O thin films, and these studies have employed a variety of substrates and growth techniques. To date, the highest values of Tc and Jc have been found for films grown by sputtering or coevaporation on single-crystal SrTiO3 substrates, which produces a uniaxially-aligned film with the YBa2Cu3Ox c-axis normal to the film plane. Multilayer growth of films on the same substrate produces a triaxially-aligned film (regions of the film have their c-axis parallel to each of the three substrate <100> directions) with lower values of Jc. Growth of films on a variety of other polycrystalline or amorphous substrates produces randomly-oriented polycrystalline films with low Jc. Although single-crystal SrTiO3 thus produces the best results, this substrate material has a number of undesireable characteristics relative to electronic applications, including very high dielectric constant and a high loss tangent at microwave frequencies. Recently, Simon et al. have shown that LaAlO3 could be used as a substrate for YBaCuO film growth. This substrate is essentially a cubic perovskite with a lattice parameter of 0.3792nm (it has a slight rhombohedral distortion at room temperature) and this material exhibits much lower dielectric constant and microwave loss tangents than SrTiO3. It is also interesting from a film growth standpoint since it has a slightly smaller lattice parameter than YBa2Cu3Ox (a=0.382nm, b=c/3=0.389nm), while SrTiO3 is slightly larger (a=0.3905nm).

Modifications of a JEOL 2000EX TEM for insSitu surface studies

1993 ◽  
Vol 51 ◽  
pp. 640-641
Author(s):  
Michael T. Marshall ◽  
Xianghong Tong ◽  
J. Murray Gibson
Keyword(s):  
Electron Diffraction ◽  
Surface Science ◽  
Film Growth ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Transmission Electron ◽  
Fundamental Insight

We have modified a JEOL 2000EX Transmission Electron Microscope (TEM) to allow in-situ ultra-high vacuum (UHV) surface science experiments as well as transmission electron diffraction and imaging. Our goal is to support research in the areas of in-situ film growth, oxidation, and etching on semiconducter surfaces and, hence, gain fundamental insight of the structural components involved with these processes. The large volume chamber needed for such experiments limits the resolution to about 30 Å, primarily due to electron optics. Figure 1 shows the standard JEOL 2000EX TEM. The UHV chamber in figure 2 replaces the specimen area of the TEM, as shown in figure 3. The chamber is outfitted with Low Energy Electron Diffraction (LEED), Auger Electron Spectroscopy (AES), Residual Gas Analyzer (RGA), gas dosing, and evaporation sources. Reflection Electron Microscopy (REM) is also possible. This instrument is referred to as SHEBA (Surface High-energy Electron Beam Apparatus).The UHV chamber measures 800 mm in diameter and 400 mm in height. JEOL provided adapter flanges for the column.

A New Method of Wafer Level Plan View TEM Sample Preparation by DualBeam

2008 ◽  
Author(s):  
Hyoung H. Kang ◽  
Michael A. Gribelyuk ◽  
Oliver D. Patterson ◽  
Steven B. Herschbein ◽  
Corey Senowitz
Keyword(s):  
Sample Preparation ◽  
Ex Situ ◽  
Wafer Level ◽  
Cross Sectional ◽  
Plan View ◽  
Manufacturing Line ◽  
Transmission Electron ◽  
Thin Lamella ◽  
Preparation Techniques

Abstract Cross-sectional style transmission electron microscopy (TEM) sample preparation techniques by DualBeam (SEM/FIB) systems are widely used in both laboratory and manufacturing lines with either in-situ or ex-situ lift out methods. By contrast, however, the plan view TEM sample has only been prepared in the laboratory environment, and only after breaking the wafer. This paper introduces a novel methodology for in-line, plan view TEM sample preparation at the 300mm wafer level that does not require breaking the wafer. It also presents the benefit of the technique on electrically short defects. The methodology of thin lamella TEM sample preparation for plan view work in two different tool configurations is also presented. The detailed procedure of thin lamella sample preparation is also described. In-line, full wafer plan view (S)TEM provides a quick turn around solution for defect analysis in the manufacturing line.

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