Properties of Ion Beam Synthesized Iron Disilicide Dots

MRS Proceedings ◽

10.1557/proc-571-287 ◽

1999 ◽

Vol 571 ◽

Author(s):

M. Galli ◽

F. Marabelli ◽

A. Pagetti ◽

M.G. Grimaldi ◽

S. Coffay ◽

...

Keyword(s):

Electronic Structure ◽

Ion Implantation ◽

Ion Beam ◽

Iron Silicide ◽

Luminescent Properties ◽

Optical Characterization ◽

Theoretical Modelling ◽

Physical Parameters ◽

Iron Disilicide ◽

Lattice Damage

ABSTRACTSemiconducting iron silicide dots with dimensions ranging between 5 and 100 nm can be obtained by ion implantation on Si wafers and exhibit interesting photo- and electro- luminescent properties.In our study we use structural and optical characterization as well as theoretical modelling in order to: i) discriminate among intrinsic effects of FeSi2 dots and effects due to lattice damage and Si matrix; ii) identify the range of physical parameters (size, phase, electronic structure) corresponding to the luminescent dots.

Download Full-text

Characterization of the Composition, Electronic Structure and Hardness of Carbon Films Obtained by Ion Implantation, Laser Ablation, and Dual Ion Beam Sputtering

Diamond and Diamond-like Films and Coatings - NATO ASI Series ◽

10.1007/978-1-4684-5967-8_27 ◽

1991 ◽

pp. 439-445

Author(s):

M. Allouard ◽

J. C. Pivin

Keyword(s):

Electronic Structure ◽

Laser Ablation ◽

Ion Implantation ◽

Ion Beam ◽

Carbon Films ◽

Ion Beam Sputtering ◽

Beam Sputtering ◽

Dual Ion Beam Sputtering

Download Full-text

Physical Parameters and Chemical Composition of Components of the Am-Type Binary System RR Lyncis

International Astronomical Union Colloquium ◽

10.1017/s0252921100020509 ◽

1993 ◽

Vol 138 ◽

pp. 192-196

Author(s):

L.S. Lyubimkov ◽

T.M. Rachkovskaya

Keyword(s):

Chemical Composition ◽

Binary System ◽

Binary Stars ◽

Spectroscopic Binaries ◽

Theoretical Modelling ◽

Physical Parameters ◽

Accurate Data ◽

Element Abundances ◽

Widespread Phenomenon ◽

Chemical Anomalies

Duplicity is a very widespread phenomenon among Am-stars. For instance, Abt (1961) investigating 25 such stars found out that 22 of them are spectroscopic binaries. However this important phenomenon is ignored usually in chemical composition investigations of Am-stars. Consequently some “mean” element abundances are determined, which can noticeably differ from real abundances in atmospheres of components. Moreover false chemical anomalies can appear, as shown by the theoretical modelling of spectra of binary stars (Lyubimkov, 1989, 1992). Meanwhile accurate data on chemical composition of Am-stars must be considered as observational test for any hypothesis suggested for explanation of these objects.

Download Full-text

Selection of RIB targets using ion implantation at the Holifield Radioactive Ion Beam Facility

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ◽

10.1016/s0168-9002(96)00631-6 ◽

1996 ◽

Vol 382 (1-2) ◽

pp. 225-231 ◽

Cited By ~ 7

Author(s):

G.D Alton ◽

J Dellwo

Keyword(s):

Ion Implantation ◽

Ion Beam ◽

Radioactive Ion Beam ◽

Selection Of

Download Full-text

A mass-separating focused-ion-beam system for maskless ion implantation

Vacuum ◽

10.1016/0042-207x(83)90764-9 ◽

1983 ◽

Vol 33 (7) ◽

pp. 423

Keyword(s):

Ion Implantation ◽

Focused Ion Beam ◽

Ion Beam ◽

Beam System

Download Full-text

Raman Spectra of Ion Implanted Graphite

MRS Proceedings ◽

10.1557/proc-7-425 ◽

1981 ◽

Vol 7 ◽

Cited By ~ 2

Author(s):

B.S. Elman ◽

H. Mazurek ◽

M.S. Dresselhaus ◽

G. Dresselhaus

Keyword(s):

Raman Spectroscopy ◽

Ion Implantation ◽

Raman Spectra ◽

Annealing Temperature ◽

Annealing Process ◽

Lattice Order ◽

Annealing Temperatures ◽

High Fluences ◽

Lattice Damage ◽

The Way

ABSTRACTRaman spectroscopy is used in a variety of ways to monitor different aspects of the lattice damage caused by ion implantation into graphite. Particular attention is given to the use of Raman spectroscopy to monitor the restoration of lattice order by the annealing process, which depends critically on the annealing temperature and on the extent of the original lattice damage. At low fluences the highly disordered region is localized in the implanted region and relatively low annealing temperatures are required, compared with the implantation at high fluences where the highly disordered region extends all the way to the surface. At high fluences, annealing temperatures comparable to those required for the graphitization of carbons are necessary to fully restore lattice order.

Download Full-text

Polymorphism and the influence of crystal structure on the luminescence of the opto-electronic material 4,4′-bis(9-carbazolyl)biphenyl

CrystEngComm ◽

10.1039/c4ce01056f ◽

2014 ◽

Vol 16 (33) ◽

pp. 7621-7625 ◽

Cited By ~ 10

Author(s):

Cody J. Gleason ◽

Jordan M. Cox ◽

Ian M. Walton ◽

Jason B. Benedict

Keyword(s):

Crystal Structure ◽

Electronic Structure ◽

Electronic Material ◽

Single Crystal ◽

Charge Transport ◽

Luminescent Properties ◽

Electronic Structure Calculations ◽

Electronic Charge ◽

Single Crystal Structures ◽

Structure Calculations

Single crystal structures, luminescent properties and electronic structure calculations of three polymorphs of the opto-electronic charge transport material 4,4′-bis(9-carbazolyl)biphenyl.

Download Full-text

Stress relaxation and optical characterization of TiO2 and SiO2 films grown by dual ion beam deposition

Thin Solid Films ◽

10.1016/j.tsf.2008.06.032 ◽

2008 ◽

Vol 516 (23) ◽

pp. 8604-8608 ◽

Cited By ~ 24

Author(s):

C. Bundesmann ◽

I.-M. Eichentopf ◽

S. Mändl ◽

H. Neumann

Keyword(s):

Stress Relaxation ◽

Ion Beam ◽

Optical Characterization ◽

Sio2 Films ◽

Ion Beam Deposition ◽

Beam Deposition

Download Full-text

Lithographically Defined Epitaxy via Focused Ion Beam Induced Lattice Damage

Microscopy and Microanalysis ◽

10.1017/s1431927610057491 ◽

2010 ◽

Vol 16 (S2) ◽

pp. 236-237

Author(s):

BD Myers ◽

B Stevens ◽

S Barnett ◽

VP Dravid

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Lattice Damage

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Download Full-text

Analytical Study of ZnO-based HEMT for Power Switching

10.21203/rs.3.rs-1140403/v1 ◽

2021 ◽

Author(s):

Pawan Kumar ◽

Sumit Chaudhary ◽

Md Arif Khan ◽

Sanjay Kumar ◽

Shaibal Mukherjee

Keyword(s):

Ion Beam ◽

Drain Current ◽

Cost Effective ◽

High Electron Mobility Transistor ◽

Switching Frequency ◽

Physical Parameters ◽

High Electron ◽

Ion Beam Sputtering ◽

Power Switching ◽

Group Iii

Abstract We investigate the power switching mechanism to evaluate the power loss ( P D ) and efficiency ( η ) in MgZnO/ZnO (MZO)-based power high electron mobility transistor (HEMT), and physical parameters responsible for P D in molecular beam epitaxy (MBE) and dual ion beam sputtering (DIBS) grown MZO HEMT and compare the performance with the group III-nitride HEMTs. This work extensively probes all physical parameters such as two-dimensional electron gas (2DEG) density, mobility, switching frequency, and device dimension to study their impact on power switching in MZO HEMT. Results suggest that the MBE and DIBS grown MZO HEMT with the gate width ( W G ) of ∼ 205 and ∼ 280 mm at drain current coefficient (k) of 11 and 15, respectively, will achieve 99.96 and 99.95% of η and 9.03 and 12.53 W of P D , respectively. Moreover, W G value for DIBS-grown MZO HEMT is observed to further reduce in the range of 112-168 mm by using a Y 2 O 3 spacer layer leading to the maximum η in the range of 99.98-99.97% and the minimum P D in the range of 5-7 W. This work is significant for the development of cost-effective HEMTs for power switching applications.

Download Full-text