Low Temperature Si Dot Thin-Film-Transistor Memory

1999 ◽  
Vol 571 ◽  
Author(s):  
K. Nomoto ◽  
D. P. Gosain ◽  
T. Noguchi ◽  
S. Usui ◽  
Y. Mori
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Laser Annealing ◽  
Quartz Substrate ◽  
Thin Film Transistor ◽  
Floating Gate ◽  
Oxide Formation ◽  
Excimer Laser Annealing ◽  
Threshold Voltage Shift ◽  
Si Thin Film

ABSTRACTWe report a novel poly-Si-thin-film-transistor based memory with Si-nano-crystals (Si dots) floating gate fabricated on a quartz substrate at a temperature below 400°C. Novel techniques of Si-dot and tunnel-oxide formation using excimer laser annealing were performed. A preliminary device shows a threshold voltage shift larger than 1 V with 20 V, 10 ms write/erase (W/E) operation and a retention time of 103 s at room temperature. The device operates 104 W/E cycles without significant degradation.

Enlargement of Poly-Si Film Grain Size by Excimer Laser Annealing and Its Application to High-Performance Poly-Si Thin Film Transistor

1991 ◽  
Vol 30 (Part 1, No. 12B) ◽  
pp. 3700-3703 ◽  
Author(s):  
Hiroyuki Kuriyama ◽  
Seiichi Kiyama ◽  
Shigeru Noguchi ◽  
Takashi Kuwahara ◽  
Satoshi Ishida ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Excimer Laser ◽  
High Performance ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Excimer Laser Annealing ◽  
Si Thin Film

Large Area Electronics for Flat Panel Imagers Progress and Challenges

2002 ◽  
Vol 715 ◽  
Author(s):  
J.P. Lu ◽  
K. Van Schuylenbergh ◽  
J. Ho ◽  
Y. Wang ◽  
J. B. Boyce ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Large Area ◽  
Flat Panel ◽  
Excimer Laser Annealing ◽  
And Performance ◽  
Flat Panel Imagers ◽  
Large Area Electronics

AbstractThe technology of large area electronics has made significant progress in recent years because of the fast maturing excimer laser annealing process. The new thin film transistors based on laser processed poly silicon provide unprecedented performance over the traditional thin film transistors using amorphous silicon. They open up the possibility of building flat panel displays and imagers with higher integration and performance. In this paper, we will review the progress of poly-Si thin film transistor technology with emphasis on imager applications. We also discuss the challenges of future improvement of flat panel imagers based on this technology.

Flat Panel Imagers Based on Excimer Laser Annealed, poly-Si Thin Film Transistor Technology

2001 ◽  
Vol 685 ◽  
Author(s):  
J.P. Lu ◽  
K. Van Schuylenbergh ◽  
R. T. Fulks ◽  
J. Ho ◽  
Y. Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
High Performance ◽  
Laser Annealing ◽  
Noise Performance ◽  
Large Area ◽  
Flat Panel ◽  
Excimer Laser Annealing ◽  
Flat Panel Imagers ◽  
Si Thin Film

AbstractPulsed Excimer-Laser Annealing (ELA) has become an important technology to produce high performance, poly-Si Thin Film Transistors (TFTs) for large area electronics. The much-improved performance of these poly-Si TFTs over the conventional hydrogenated amorphous Si TFTs enables the possibility of building next generation flat panel imagers with higher-level integration and better noise performance. Both the on-glass integration of peripheral driver electronics to reduce the cost of interconnection and the integration of a pixel level amplifier to improve the noise performance of large area imagers have been demonstrated and are discussed in this paper.

A Novel Excimer Laser Crystallization Method of Poly-Si Thin Film by Grid Line Electron Beam Irradiation

1999 ◽  
Vol 557 ◽  
Author(s):  
C-M Park ◽  
M-C Lee ◽  
J-H Jeon ◽  
M-K Han
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Ion Beam ◽  
Growth Effect ◽  
Beam Irradiation ◽  
Laser Crystallization ◽  
Excimer Laser Annealing ◽  
Transmission Electron ◽  
Si Thin Film

AbstractExcimer laser annealing technique is proposed to increase the grain size and controlling the microstructure of polycrystalline silicon (poly-Si) thin film. Our method is based on the lateral grain growth during laser annealing. Our specific grid ion beam irradiation method was designed to maximize the lateral growth effect and arrange the location of grain boundaries. We observed well-arranged poly-Si grains up to micrometer order by transmission electron microscopy (TEM).

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