Role of Silver Doping in the Improvement of Electrical Properties of (Ba,Sr)TiO3 Thin Films

1999 ◽  
Vol 567 ◽  
Author(s):  
Anuranjan Srivastava ◽  
D. Kumar ◽  
Rajiv K. Singh ◽  
Harish Venkataraman ◽  
William R. Eisenstadt
Keyword(s):  
Electrical Properties ◽  
Oxygen Vacancies ◽  
Domain Walls ◽  
Silver Doping ◽  
Order Of Magnitude ◽  
Electrical And Dielectric Properties ◽  
Bst Films ◽  
Fabrication And Characterization

ABSTRACTIn this paper we report the fabrication and characterization of Ag/(Ba,Sr)TiO3 /LaNiO3/LaAlO3 capacitors. All the films, including the top (silver) and bottom (LaNiO3) electrodes, were deposited using a pulsed laser deposition technique. The electrical and dielectric properties of (Ba,Sr)TiO3 capacitors were found to improve significantly by means of silver doping. For example, the leakage current density of a Ag/Ag-doped-(Ba,Sr)TiO3 /LaNiO3/ capacitor was about an order of magnitude lower and dielectric constant was ∼40 % higher than that of a Ag/(Ba,Sr)TiO3 /LaNiO3/capacitor over a range of biases. The improvement in the electrical properties of (Ba,Sr)TiO3 films is believed to be caused by a double role of silver. The first one is associated with the reduced oxygen vacancies due to improved oxygenation of BST films in presence of silver and the second one is associated unpinning effect of domain walls again in presence of silver.

Fabrication and Characterization of Photocatalyst Coatings by Heat Treatment in Carbon Powder for TiC Coatings

2017 ◽  
Vol 263 ◽  
pp. 137-141
Author(s):  
Su Jun Guan ◽  
Liang Hao ◽  
Hiroyuki Yoshida ◽  
Hiroshi Asanuma ◽  
Fu Sheng Pan ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Photocatalytic Activity ◽  
Visible Light ◽  
Oxygen Vacancies ◽  
Treatment Temperature ◽  
Carbon Powder ◽  
Treatment Conditions ◽  
Fabrication And Characterization ◽  
Mechanical Coating

Photocatalyst coatings on alumina (Al2O3) balls had been successfully fabricated by mechanical coating technique, with titanium carbide (TiC) powder and subsequent heat treatment in carbon powder. The effect of heat treatment conditions in carbon powder on the formed compounds, surface morphology and photocatalytic activity of photocatalyst coatings was investigated. XRD results show that the formed compounds change with increasing the heat treatment temperature in carbon powder, and rutile TiO2 on the surface of TiC coatings at 1073 K and 1173 K. The generated oxygen vacancies confirmed by XPS measurement, are in favor of narrowing band gap to enhance the visible-light photocatalytic activity of photocatalyst coatings. The photocatalytic activity of photocatalyst coatings has been effectively enhanced, and the samples fabricated at 1073 K and 1173 K for 2 h show higher activity. The fabrication strategy provides us a facile preparation procedure of visible-light responsive photocatalyst coatings.

Fabrication and characterization of monomer treated sago starch film: Role of gamma irradiation

2014 ◽  
Vol 18 (2) ◽  
pp. 280-293
Author(s):  
Yasir Arafat ◽  
Pinku Poddar ◽  
Kamol Dey ◽  
Ruhul A. Khan ◽  
Mubarak A. Khan ◽  
...  
Keyword(s):  
Gamma Irradiation ◽  
Sago Starch ◽  
Fabrication And Characterization

Growth and Characterization of Poly-SiGe Prepared by Reactive Thermal CVD

2004 ◽  
Vol 808 ◽  
Author(s):  
Jianjun Zhang ◽  
Kousaku Shimizu ◽  
Jun-ichi Hanna
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Growth Rate ◽  
Crystal Growth ◽  
Electrical Properties ◽  
Flow Rate ◽  
Amorphous Film ◽  
Thermal Cvd

ABSTRACTWe have prepared poly-Si1-xGex thin films with different germanium contents (Ge=5%∼40%) by reactive thermal CVD. In this study, the Ge content was controlled by varying the source gases GeF4 flow rate at a fixed Si2H6 flow rate. The effects of GeF4 flow rate on growth rate, film crystallinity, and electrical properties were investigated. The films were always polycrystalline when GeF4 was introduced even in a small amount, while only amorphous film deposited without GeF4. With an increase in GeF4 flow rate, Ge content and conductivity of the films increased and its activation energy decreased. When GeF4 flow rate over a certain value, the growth rate decrease and finally no film could be deposited. These behaviors are discussed in relation with a role of GeF4 for the crystal growth at a low temperature.

Role of Na-doping-induced oxygen vacancies in the variation of electrical properties of NiO ceramics

2017 ◽  
Vol 43 (15) ◽  
pp. 11898-11901 ◽  
Author(s):  
Seojin Yang ◽  
Jiwoong Kim ◽  
Sehwan Song ◽  
Dooyong Lee ◽  
Tae-Seong Ju ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Oxygen Vacancies ◽  
Na Doping

scholarly journals Preparation, Characterization, and Evaluation of Humidity-Dependent Electrical Properties of Undoped and Niobium Oxide-Doped TiO2 : WO3 Mixed Powders

2017 ◽  
Vol 2017 ◽  
pp. 1-9 ◽  
Author(s):  
Pedro M. Faia ◽  
Juliano Libardi ◽  
Itamar Barbosa ◽  
Evando S. Araújo ◽  
Helinando P. de Oliveira
Keyword(s):  
Electrical Properties ◽  
Electrical Characterization ◽  
Ternary Systems ◽  
Ceramic Materials ◽  
Bet Surface Area ◽  
X Ray Diffraction ◽  
Order Of Magnitude ◽  
Diffraction Patterns ◽  
Pellet Form

The study of selective metal oxide-based binary/ternary systems has received increasing interest in recent years due to the possibility of producing efficient new ceramic materials for relative humidity (RH) detection, given the superior properties of the mixed compounds in comparison with pristine ones. The aim of this work was focused on preparation and characterization of non-doped and Nb2O5-doped TiO2 : WO3 pair (in the pellet form) and evaluation of corresponding humidity-dependent electrical properties. The microstructure of the samples was analyzed from scanning electron microscopy, X-ray diffraction patterns, Raman spectra, BET surface area analysis, and porosimetry. The electrical characterization was obtained from impedance spectroscopy (100 Hz to 40 MHz) in the 10–100% RH range. The results showed that adequate doping levels of Nb2O5 introduce important advantages due to the atomic substitution of Ti by Nb atoms in highly doped structures with different levels of porosity and grain sizes. These aspects introduced a key role in the excursion (one order of magnitude) in the bulk resistance and grain boundary resistance, which characterizes these composite ceramics as a promising platform for RH identification.

scholarly journals Electrochemical and microstructural characterization of platinum supported on glassy carbon

2007 ◽  
Vol 61 (3) ◽  
pp. 135-141
Author(s):  
Sanja Terzic ◽  
Vladislava Jovanovic ◽  
Dusan Tripkovic ◽  
Andrzej Kowal ◽  
Jerzy Stoch
Keyword(s):  
Methanol Oxidation ◽  
Glassy Carbon ◽  
Microstructural Characterization ◽  
Electrochemical Treatment ◽  
Organic Residues ◽  
Remarkable Effect ◽  
Platinum Particles ◽  
Order Of Magnitude

The effect of the electrochemical oxidation of glassy carbon on the deposition of platinum particles and the electrocatalytic activity of platinum supported on oxidized glassy carbon were studied for methanol oxidation in H2SO4 solution. Platinum was potentiostatically deposited from H2SO4 + 6mM H2PtCl6 solution. Glassy carbon was anodically polarized in 1 M NaOH at 1.41 V (SCE) for 35 and 95 s and in 0.5 M H2SO4 at 2V (SCE) for 35; 95 s and 2.25 V for 35 and 95 s. Electrochemical treatment of the GC support leads to a better distribution of platinum on the substrate and has remarkable effect on the activity. The activity of the Pt/GCox electrode for methanol oxidation is larger than that of polycrystalline Pt and by more than one order of magnitude larger than that of a Pt/GC electrode. This increase in activity indicates the pronounced role of the organic residues of the GC support on the properties of Pt particles deposited on glassy carbon.

Fabrication and characterization of high frequency SAW device with IDT/ZnO/AlN/Si configuration: role of AlN buffer

2004 ◽  
Vol 447-448 ◽  
pp. 605-609 ◽  
Author(s):  
Jun-Phil Jung ◽  
Jin-Bock Lee ◽  
Jung-Sun Kim ◽  
Jin-Seok Park
Keyword(s):  
High Frequency ◽  
Fabrication And Characterization ◽  
Aln Buffer

Design, Fabrication, and Characterization of Piezoresistive MEMS Shear Stress Sensors

2005 ◽  
Author(s):  
A. Alvin Barlian ◽  
Sung-Jin Park ◽  
Vikram Mukundan ◽  
Beth L. Pruitt
Keyword(s):  
Shear Stress ◽  
Force Sensor ◽  
Lateral Force ◽  
Stress Sensors ◽  
Silicon Cantilever ◽  
Shear Stress Sensors ◽  
Out Of Plane ◽  
Order Of Magnitude ◽  
Fabrication And Characterization

This paper presents the design, fabrication, and characterization of unique piezoresistive microfabricated shear stress sensors for direct measurements of shear stress underwater. The uniqueness of this design is in its transduction scheme which uses sidewall-implanted piezoresistors to measure lateral force (and shear stress), along with traditional top-implanted piezoresistors to detect normal forces. Aside from the oblique-implant technique, the fabrication process also includes hydrogen anneal step to smooth scalloped silicon sidewalls due to Deep Reactive Ion Etch process, which was shown to reduce 1/f noise level by almost an order of magnitude for the sidewall-implanted piezoresistors. Lateral sensitivity characterization of the sensors was done using a microfabricated silicon cantilever force sensor, while out-of-plane characterization was done using Laser Doppler Vibrometry technique. In-plane sensitivity and out-of-plane crosstalk were characterized, as well as hysteresis and repeatability of the measurements. The sensors are designed to be used underwater for various applications.

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