Modeling of Cathodoluminescence and Photoluminescence Properties of Pulsed Laser-Deposited Europium-Activated Yttrium Oxide thin Film Phosphors

1999 ◽  
Vol 560 ◽  
Author(s):  
K.G. Cho ◽  
D. Kumar ◽  
Z. Chen ◽  
P. H. Holloway ◽  
R. K. Singh
Keyword(s):  
Thin Film ◽  
Yttrium Oxide ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Oxide Thin Film ◽  
Photoluminescence Properties ◽  
Sapphire Substrates ◽  
Phosphor Film ◽  
Film Roughness ◽  
Substrate Surfaces

ABSTRACTEuropium-activated yttrium oxide (Eu:Y2O3) thin films were deposited on (100) silicon and (0001) sapphire substrates using 248 nm KrF pulsed laser. To investigate the effect of the Eu:Y2O3 film roughness on cathodoluminescence (CL) and photoluminescence (PL) properties, the substrate surfaces with various roughnesses were used. The roughness was found to play an important role in determining CL and PL brightness of the Eu:Y2O3 films. The improvement in brightness by increasing the film roughness is due to increase in total portion of light that escapes from the surface of the phosphor film. A model has been proposed which supports strongly this explanation. Our results show that depositions with slower growth rate and lower laser energy are more important parameters than increasing the roughness to improve CL brightness of the Eu:Y2O3 thin film phosphors.

Modeling of Cathodoluminescence and Photoluminescence Properties of Pulsed Laser-Deposited Europium-Activated Yttrium Oxide Thin Film Phosphors

1999 ◽  
Vol 558 ◽  
Author(s):  
K.G. Cho ◽  
D. Kumar ◽  
Z. Chen ◽  
P. H. Holloway ◽  
R. K. Singh
Keyword(s):  
Thin Film ◽  
Yttrium Oxide ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Oxide Thin Film ◽  
Photoluminescence Properties ◽  
Sapphire Substrates ◽  
Phosphor Film ◽  
Film Roughness ◽  
Substrate Surfaces

ABSTRACTEuropium-activated yttrium oxide (Eu:Y2O3) thin films were deposited on (100) silicon and (0001) sapphire substrates using 248 nm KrF pulsed laser. To investigate the effect of the Eu:Y2O3 film roughness on cathodoluminescence (CL) and photoluminescence (PL) properties, the substrate surfaces with various roughnesses were used. The roughness was found to play an important role in determining CL and PL brightness of the Eu:Y2O3 films. The improvement in brightness by increasing the film roughness is due to increase in total portion of light that escapes from the surface of the phosphor film. A model has been proposed which supports strongly this explanation. Our results show that depositions with slower growth rate and lower laser energy are more important parameters than increasing the roughness to improve CL brightness of the Eu:Y2O3 thin film phosphors.

Transparent and highly luminescent Eu-oxide thin film phosphors on sapphire substrates

2013 ◽  
Vol 9 (S1) ◽  
pp. 59-63 ◽  
Author(s):  
Ki-Woong Chae ◽  
Ta-Ryeong Park ◽  
Chae Il Cheon ◽  
Nam In Cho ◽  
Jeong Seog Kim
Keyword(s):  
Thin Film ◽  
Oxide Thin Film ◽  
Sapphire Substrates

scholarly journals Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition

2010 ◽  
Vol 2010 ◽  
pp. 1-27 ◽  
Author(s):  
Michael Lorenz ◽  
Holger Hochmuth ◽  
Christoph Grüner ◽  
Helena Hilmer ◽  
Alexander Lajn ◽  
...  
Keyword(s):  
Thin Film ◽  
Dislocation Density ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Chemical Vapor ◽  
Laser Deposition ◽  
Oxide Thin Film ◽  
Organic Chemical ◽  
Large Area ◽  
Low Dislocation Density

Advanced Pulsed Laser Deposition (PLD) processes allow the growth of oxide thin film heterostructures on large area substrates up to 4-inch diameter, with flexible and controlled doping, low dislocation density, and abrupt interfaces. These PLD processes are discussed and their capabilities demonstrated using selected results of structural, electrical, and optical characterization of superconducting (YBa2Cu3O7−δ), semiconducting (ZnO-based), and ferroelectric (BaTiO3-based) and dielectric (wide-gap oxide) thin films and multilayers. Regarding the homogeneity on large area of structure and electrical properties, flexibility of doping, and state-of-the-art electronic and optical performance, the comparably simple PLD processes are now advantageous or at least fully competitive to Metal Organic Chemical Vapor Deposition or Molecular Beam Epitaxy. In particular, the high flexibility connected with high film quality makes PLD a more and more widespread growth technique in oxide research.

Growth, structuring and characterisation of all-oxide thin film devices prepared by pulsed laser deposition

1996 ◽  
pp. 744-751
Author(s):  
J.F.M. Cillessen ◽  
R.M. Wolf ◽  
J.B. Giesbers ◽  
P.W.M. Blom ◽  
K.-O. Grosse-Holz ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Film ◽  
Thin Film Devices

scholarly journals Femtosecond pulsed laser deposited Er3+-doped zinc-sodium tellurite glass on Si: Thin-film structural and photoluminescence properties

AIP Advances ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 085324 ◽  
Author(s):  
Thomas Mann ◽  
Billy Richards ◽  
Eric Kumi-Barimah ◽  
Robert Mathieson ◽  
Matthew Murray ◽  
...  
Keyword(s):  
Thin Film ◽  
Tellurite Glass ◽  
Pulsed Laser ◽  
Photoluminescence Properties ◽  
Sodium Tellurite ◽  
Si Thin Film ◽  
Femtosecond Pulsed Laser

TEM Study of the Effect of the Sapphire Substrate Surface Orientation on the Microstructure of Tin Dioxide Films

2001 ◽  
Vol 7 (S2) ◽  
pp. 1220-1221
Author(s):  
J. E. Dominguez ◽  
L. Fu ◽  
X. Q. Pan
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
High Performance ◽  
Tin Dioxide ◽  
Substrate Surface ◽  
Sensor Arrays ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Oxide Thin Film ◽  
Thin Film Sensors

Tin dioxide (SnO2) has been extensively studied and used as gas sensors to detect toxic gases such as CO, NOxand flammable gases like H2.[l] Recently, considerable researches have focused on thin film sensors due to their high performance as well as their integration compatibility with semiconductor technology for making microsensors and sensor arrays. [2] The performance of thin film sensors is remarkably influenced by the way they were fabricated.[3] Among various deposition techniques, pulsed laser deposition (PLD) has shown great prominence in the deposition of a wide variety of oxide thin film materials such as high Tc superconductors, semiconductors and dielectrics. in this work we present our experimental results on tin dioxide films deposited using pulsed laser ablation on sapphire (α -Al2O3) substrates with different surface orientations.Tin oxide films with a thickness of 100 nm were deposited on the (1012) and (0001) sapphire by pulsed laser ablation of ceramic SnO2 targets.

A valence-selective X-ray fluorescence holography study of an yttrium oxide thin film

2017 ◽  
Vol 50 (6) ◽  
pp. 1583-1589 ◽  
Author(s):  
J. R. Stellhorn ◽  
S. Hosokawa ◽  
N. Happo ◽  
H. Tajiri ◽  
T. Matsushita ◽  
...  
Keyword(s):  
Thin Film ◽  
Absorption Edge ◽  
Structural Information ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Film ◽  
Film Sample ◽  
Epitaxial Thin Film ◽  
X Ray ◽  
Valence States

The first direct valence-selective structure determination by X-ray fluorescence holography is reported. The method is applied to investigate an epitaxial thin film of the rare earth monoxide YO, which has recently been synthesized by pulsed laser deposition. The surface of the sample is easily oxidized to Y2O3. In order to separate the structural information connected with the two different valence states of Y, the X-ray fluorescence holography measurements were performed close to the YKabsorption edge. Using the shift of the absorption edge for the different valence states, very different relative contributions of YO and Y2O3are obtained. Thus, it is possible to distinguish the crystal structures of YO and Y2O3in the thin-film sample.

Microstructure of epitaxial oxide thin film heterostructures on silicon by pulsed laser deposition

1994 ◽  
Vol 64 (25) ◽  
pp. 3407-3409 ◽  
Author(s):  
Subodh G. Ghonge ◽  
Edward Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Film ◽  
Epitaxial Oxide
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