Epitaxy of Arsenic-Pressure-Controlled MBE-Grown GaAs Layers
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AbstractSurface morphologies of the molecular beam epitaxy (MBE)-grown GaAs layers using the background-arsenic-pressure-control method were investigated. The growth parameters, such as substrate temperature, growth rate, epilayer thickness, As/Ga ratio, doping concentration, substrate type, etc., are related to the observed oval defect density. Protrusions and Ga-droplets caused oval defects during growth. The origin of the oval defects in our system is found to be the gallium oxide, not Ga "spitting" from the effusion cell.
Influence of growth parameters and conditions on the oval defect density in GaAs layers grown by MBE
1989 ◽
Vol 96
(3)
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pp. 533-540
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2020 ◽
Vol 18
(7)
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pp. 1715-1727
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2012 ◽
Vol 565
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pp. 76-81
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2011 ◽
Vol 103
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pp. 399-403
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