Surface Studies of Silicon with a High Resolution Transmission Electron Microscope

1985 ◽  
Vol 56 ◽  
Author(s):  
J.M. Gibson ◽  
M.L. McDonald ◽  
F.C. Unterwald ◽  
H.-J. Gossmann ◽  
J.C. Bean ◽  
...  
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Transmission Electron Microscope ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Bond Density ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Energy Surfaces

AbstractUsing a specially modified ultra-high vacuum, ultra-high resolution transmission electron microscope, in-situ cleaned Si surfaces have been examined with near atomic resolution. By annealing the edges of a <110> thin Si specimen in-situ, it is found that low energy surfaces form. A surprising observation is that the {113} surface is stable and reconstructed by dimerization to a very low dangling bond density. It is also found that a 7×7 surface peridoicity can be preserved at a buried Si < 111 > / amorphous Si interface.

The Growth and Characterisation of Ir Silicide Films on (111)Si

1990 ◽  
Vol 202 ◽  
Author(s):  
M.A. Lawn ◽  
R.G. Elliman ◽  
M.C. Ridgway ◽  
R. Leckey ◽  
J.D. Riley
Keyword(s):  
Electron Microscope ◽  
Epitaxial Growth ◽  
Transmission Electron Microscope ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Grain Structure ◽  
Si Substrates ◽  
Fine Grain ◽  
Transmission Electron

ABSTRACTA study of the growth of thin Ir silicide films on (111)Si substrates has been undertaken. Thin (2.0nm) ir films deposited onto Si substrates under ultra-high vacuum conditions have been observed to display remarkable film continuity and fine grain structure (lnm). In situ annealing at 1000°C resulted in the formation of large regions (>10µm) of epitaxial IrSi3 islands (∼1µm) with identical epitaxial orientations. By means of annealing an as-deposited (2.0nm) Ir film stepwise to 1000°C within a transmission electron microscope the evolution of Ir silicide phases and morphologies were observed. The epitaxial growth of the semiconducting IrSi1.75 phase is reported along with the formation of Ir silicide islands at temperatures between 700°C and 800°C.

In-Situ Transmission Electron Microscopy of the Etching of Silicon (111) Surfaces by Oxygen

1991 ◽  
Vol 238 ◽  
Author(s):  
J. M. Gibson ◽  
F. M. Ross
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
Oxide Layer ◽  
Transmission Electron Microscope ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Surface Steps ◽  
Transmission Electron

ABSTRACTSilicon (111) surfaces have been etched in-situ in a ultra-high vacuum transmission electron microscope. Surface steps are observed to flow during etching, so that Si atoms are removed only from steps. This is in contrast to the behavior during the formation of an oxide layer reported previously. The nucleation of steps and their interaction with surface impurities is described.

The High Resolution Scanning Transmission Electron Microscope

1974 ◽  
Vol 32 ◽  
pp. 316-317
Author(s):  
A. V. Crewe
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
High Vacuum ◽  
Scanning Transmission Electron Microscope ◽  
Ultra High Vacuum ◽  
Resolving Power ◽  
Imaging Characteristics ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
The Moment

The high resolution STEM is now a fact of life. I think that we have, in the last few years, demonstrated that this instrument is capable of the same resolving power as a CEM but is sufficiently different in its imaging characteristics to offer some real advantages.It seems possible to prove in a quite general way that only a field emission source can give adequate intensity for the highest resolution^ and at the moment this means operating at ultra high vacuum levels. Our experience, however, is that neither the source nor the vacuum are difficult to manage and indeed are simpler than many other systems and substantially trouble-free.

scholarly journals In situ electrical probing and bias-mediated manipulation of dielectric nanotubes in a high-resolution transmission electron microscope

2006 ◽  
Vol 88 (12) ◽  
pp. 123101 ◽  
Author(s):  
D. Golberg ◽  
M. Mitome ◽  
K. Kurashima ◽  
C. Y. Zhi ◽  
C. C. Tang ◽  
...  
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Transmission Electron Microscope ◽  
Transmission Electron

In Situ Observation of Quantized Growth of Titanium Silicide in Ultra High Vacuum Transmission Electron Microscope (UHV-TEM)

2006 ◽  
Vol 51 ◽  
pp. 14-19
Author(s):  
Cheng Lun Hsin ◽  
Wen Wei Wu ◽  
Hung Chang Hsu ◽  
Lih Juann Chen
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
High Vacuum ◽  
Titanium Silicide ◽  
Ultra High Vacuum ◽  
Dislocation Network ◽  
In Situ Observation ◽  
Stress Effect ◽  
Transmission Electron ◽  
Initial Stage

Dynamic study of the growth of TiSi2 nanorods on Si bicrystal was conducted in an ultrahigh vacuum transmission electron microscope. The growth of the nanorods was affected by the underlying dislocation grids significantly. The dislocation grids confined the shape of the nanoclusters and nanorods. Compared to the time of the nanorod remaining at the same length, the elongating time is relatively short. The dislocation network confined the nanorod to match the dislocation interspacing and the step-wise growth of the nanorod was found. The growth mechanism is attributed to the compliant effect. The observation was constructive to the basic understanding of the stress effect on the initial stage of the reaction of metals on Si.

Sign in / Sign up

Export Citation Format

Share Document