High-Dielectric Constant Insulators and the AMLCD Process: Is Amorphous BST a Candidate?

1999 ◽  
Vol 558 ◽  
Author(s):  
P. Andy ◽  
D. Neumayer ◽  
P. Duncombe ◽  
C. Dimitrakopoulos ◽  
F. Libsch ◽  
...  

ABSTRACTAs the active matrix flat panel market continues to grow, manufacturers are constantly looking for ways of gaining an advantage in the marketplace typically through increased performance, expanded functionality and/or reduced cost. The continuing trend of larger panel sizes and higher resolution poses interesting challenges for manufacturers in the areas of image quality and brightness. In particular, it has been clearly shown that as pixel dimensions shrink, relative crosstalk coupling coefficients increase while the area available for pixel electrodes and storage capacitors (Cδ,t) decreases, so that charge compensation drive schemes must be employed to eliminate visual artifacts. One approach to minimizing crosstalk and flicker is to increase Cδ,t, however this requires increased pixel area, usually at the expense of brightness due to smaller aperture ratio. Depending on design and process flow, it may be possible to replace the typical Cδ,t, insulator, SiNx:H, with a material of higher dielectric constant thereby vastly improving electrical performance without sacrificing brightness.

2010 ◽  
Vol 2010 (1) ◽  
pp. 000072-000075 ◽  
Author(s):  
Jin-Hyun Hwang ◽  
John Andresakis ◽  
Bob Carter ◽  
Yuji Kageyama ◽  
Fujio Kuwako

New and novel organic-based composite materials for the use of embedded RF capacitors have been developed to address the important material issues by means of functional filler and resin chemistry. Combining different fillers with appropriate chemistries, the net composite can be made thermally stable while retaining the high dielectric constant and low loss. These composites attained dielectric constant of above 7 without compromising the quality factor in GHz frequency range. In addition, measurement of capacitance variation as a function of temperature (TCC) showed flatter TCC profile, resulting in TCC of ±30 ppm/°C over the temperature range −55°C to 125°C. It can be incorporated into organic chip package and, unlike ceramic-based LTCC they can utilize large area processing that is typical, and available in high volume manufacturing. This material is formulated for RF module designers to successfully implement embedded RF capacitors into their organic chip package designs and thus improve form factor, electrical performance and possibly reduce overall costs.


1997 ◽  
Vol 470 ◽  
Author(s):  
R. P. S. Thakur ◽  
S. J. DeBoer ◽  
R. Singh

ABSTRACTThe focus of ULSI electronics is shifting rapidly towards the development and integration of various low and high dielectric constant materials. Memory manufacturers are driving the quest for integration-friendly, high dielectric constant materials, while the logic makers are seeking materials with the lowest possible dielectric constant to use as interlayer dielectrics for their multilayer backend needs. Both of these categories of materials need the highest possible level of reliability, integrability, and manufacturability in the current and upcoming real world. Strong development emphasis in improving the structural aspects of these materials is needed more now than ever before both in university laboratories and industrial R&D. An intense focus on these materials demands immediate, improved, and innovative process solutions. One key process area is the thermal engineering and processing of these materials and hence is the focus of this paper.In this paper, we present recent results from both university and industry process development work. We compare and contrast the thermal process requirements of some enabling materials with dielectric constants ranging from 2 to more than 100. The examples in our study encompass materials such as Teflon™, PLZT, cell nitride, and tantalum pentoxide. The enhancements in the structural and electrical performance of these materials as a function of thermal cycles used either for deposition or annealing is demonstrated through various examples.


2020 ◽  
Vol 8 (32) ◽  
pp. 16661-16668
Author(s):  
Huayao Tu ◽  
Shouzhi Wang ◽  
Hehe Jiang ◽  
Zhenyan Liang ◽  
Dong Shi ◽  
...  

The carbon fiber/metal oxide/metal oxynitride layer sandwich structure is constructed in the electrode to form a mini-plate capacitor. High dielectric constant metal oxides act as dielectric to increase their capacitance.


2018 ◽  
Vol 6 (9) ◽  
pp. 2370-2378 ◽  
Author(s):  
Yang Liu ◽  
Cheng Zhang ◽  
Benyuan Huang ◽  
Xu Wang ◽  
Yulong Li ◽  
...  

A novel skin–core structured fluorinated MWCNT nanofiller was prepared to fabricate epoxy composite with broadband high dielectric constant and low dielectric loss.


Author(s):  
Gyuseung Han ◽  
In Won Yeu ◽  
Kun Hee Ye ◽  
Seung-Cheol Lee ◽  
Cheol Seong Hwang ◽  
...  

Through DFT calculations, a Be0.25Mg0.75O superlattice having long apical Be–O bond length is proposed to have a high bandgap (>7.3 eV) and high dielectric constant (∼18) at room temperature and above.


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