An Optical Gap Calibration Applied to the Case of Hydrogenated Amorphous Silicon

1999 ◽  
Vol 557 ◽  
Author(s):  
D. E. Sweenor ◽  
S. K. O'Leary ◽  
B. E. Foutz
Keyword(s):  
Optical Absorption ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Semiconductor ◽  
Empirical Measures ◽  
Optical Gap ◽  
Hydrogenated Amorphous ◽  
Absorption Tail ◽  
Empirical Means

AbstractThere are many different empirical means whereby the optical gap of an amorphous semiconductor may be defined. We analyze some hydrogenated amorphous silicon data with respect to a number of these empirical measures for the optical gap. By plotting these various gap measures as a function of the breadth of the optical absorption tail, we provide a means of relating these disparate measures of the optical gap. The applicability of this calibration to another set of hydrogenated amorphous silicon data is investigated.

Optical Absorption in Amorphous Silicon

1996 ◽  
Vol 420 ◽  
Author(s):  
S. K. O'Leary ◽  
S. Zukotynski ◽  
J. M. Perz ◽  
L. S. Sidhu
Keyword(s):  
Absorption Spectrum ◽  
Optical Absorption ◽  
Amorphous Silicon ◽  
Optical Absorption Spectrum ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous ◽  
Absorption Tail

AbstractThe role that disorder plays in shaping the form of the optical absorption spectrum of hydrogenated amorphous silicon is investigated. Disorder leads to a redistribution of states, which both reduces the ‘Tauc’ gap and broadens the absorption tail. The observed relationship between the ‘Tauc’ gap and the breadth of the absorption tail is thus explained.

Improved Light Soaking Stability of R.F. Sputter Deposited Amorphous Silicon

1991 ◽  
Vol 219 ◽  
Author(s):  
A. Wynveen ◽  
J. Fan ◽  
J. Kakalios ◽  
J. Shinar
Keyword(s):  
Amorphous Silicon ◽  
Hydrogen Content ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Dark Conductivity ◽  
Initial Defect ◽  
Optical Gap ◽  
Sputter Deposited ◽  
Staebler Wronski Effect ◽  
Hydrogenated Amorphous

ABSTRACTStudies of r.f. sputter deposited hydrogenated amorphous silicon (a-Si:H) find that the light induced decrease in the dark conductivity and photoconductivity (the Staebler-Wronski effect) is reduced when the r.f. power used during deposition is increased. The slower Staebler-Wronski effect is not due to an increase in the initial defect density in the high r.f. power samples, but may result from either the lower hydrogen content or the smaller optical gap found in these films.

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