ESR Measurements of a-Si:H and a-Si0.5Ge0.5:H Films Under Solid-Phasecrystallization

1999 ◽  
Vol 557 ◽  
Author(s):  
I. H. Yun ◽  
O. H. Roh ◽  
J.-K. Lee
Keyword(s):  
Spin Density ◽  
Annealing Time ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Dangling Bond ◽  
Dangling Bonds ◽  
X Ray Diffraction ◽  
X Ray ◽  
G Value ◽  
In The Beginning

AbstractWe have investigated the solid-phase crystallization of a-Si1-xGex:H (x=0 and 0.5) films by using electron spin resonance and x-ray diffraction. The films were deposited on Coming 1737 glass in a plasma-enhanced chemical vapor deposition system using SiH4 and GeH4 gases. The films were then annealed to be crystallized at 600°C. It was observed that, for the a-Si:H film, both the spin density and the g-value first increased with annealing time, and then rapidly decreased as the film was crystallized. For the a-Si0.5Ge0.5:H film, the Ge dangling bond spin density increased from 3 × 1018 cm-3 to 2 × 1019 cm3 for the first stage of annealing and then decreased to 3 × 1017 cm-3 after being crystallized; the Si dangling bond spin density just increased to about 2 × 1017 cm-3 and remained nearly constant for further annealing. It is thought that exodiffusion of hydrogen resulted in the increase of spin density in the beginning, and then some portions of amorphous components were converted into the crystalline phase by further annealing. And the keen correlation between the dependence of x-ray peak intensity and the dependence of Ge dangling bond spin density on the annealing time suggests that the Ge dangling bonds rather than Si dangling bonds play an important role in the crystallization of the Si0.5Ge0.5 film.

Wide angle X-ray diffraction study of the solid-phase chlorinated poly(ethylene)

Polymer ◽  
2004 ◽  
Vol 45 (18) ◽  
pp. 6341-6348 ◽  
Author(s):  
S. Stoeva ◽  
A. Popov ◽  
R. Rodriguez
Keyword(s):  
Diffraction Study ◽  
Solid Phase ◽  
Wide Angle ◽  
X Ray Diffraction ◽  
X Ray ◽  
Poly Ethylene

PREPARATION OF ANTIMONY-PLATINUM SURFACE ALLOY ELECTRODE BY ATOM DIFFUSION IN THE SOLID PHASE

2006 ◽  
Vol 20 (25n27) ◽  
pp. 3999-4004
Author(s):  
HIROSHI MATSUI ◽  
KAZUFUMI WATANABE
Keyword(s):  
Diffraction Pattern ◽  
Low Temperatures ◽  
Solid Phase ◽  
Electrochemical Measurement ◽  
X Ray Diffraction ◽  
Platinum Surface ◽  
X Ray ◽  
Atom Diffusion ◽  
Heat Treated ◽  
Titanium Substrates

Antimony-platinum bilayers were prepared on titanium substrates by the two-step electrodeposition in the usual baths, and then surface alloys were formed by the atom diffusion in the solid phase. The simple antimony layer was little influenced by the substrate in both the measurements of X-ray diffraction and the i - E characteristic in a sulfuric acid solution. Regarding the bilayers, the catalytic activity in hydrogen evolution reaction was very sensitive to the presence of platinum, while the hydrogen adsorbability was quite insensitive. An interaction between antimony and platinum was confirmed by the appearance of a new dissolution wave in the electrochemical measurement and the occurrence of a new diffraction in the X-ray diffraction pattern after the heat-treatment of about 400°C. Although the new diffraction disagreed with any of the reported alloys, clear diffraction pattern of PtSb 2 alloy was observed, when the bilayers were heat-treated at about 600°C for one hour. Considering the penetration depth of X-ray, the alloying of antimony and platinum seems to occur also at low temperatures at least at the top surface.

OMCVD of thin films from metal diketonates and triphenylbismuth

1990 ◽  
Vol 5 (6) ◽  
pp. 1169-1175 ◽  
Author(s):  
A. D. Berry ◽  
R. T. Holm ◽  
M. Fatemi ◽  
D. K. Gaskill
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Strontium Barium ◽  
X Ray ◽  
Scanning Electron

Films containing the metals copper, yttrium, calcium, strontium, barium, and bismuth were grown by organometallic chemical vapor deposition (OMCVD). Depositions were carried out at atmospheric pressure in an oxygen-rich environment using metal beta-diketonates and triphenylbismuth. The films were characterized by Auger electron spectroscopy, Nomarski and scanning electron microscopy, and x-ray diffraction. The results show that films containing yttrium consisted of Y2O3 with a small amount of carbidic carbon, those with copper and bismuth were mixtures of oxides with no detectable carbon, and those with calcium, strontium, and barium contained carbonates. Use of a partially fluorinated barium beta-diketonate gave films of BaF2 with small amounts of BaCO3.

Composition Analysis of Ge/Si1-xGex: C Buffer on Silicon Measured by Planar Scanning Energy Dispersive Spectroscopy

2011 ◽  
Vol 383-390 ◽  
pp. 7619-7623
Author(s):  
Z Z Lu ◽  
F. Yu ◽  
L. Yu ◽  
L. H. Cheng ◽  
P. Han
Keyword(s):  
Energy Dispersive Spectroscopy ◽  
Chemical Vapor ◽  
Energy Dispersive ◽  
Composition Analysis ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Composition Distribution ◽  
X Ray ◽  
Cvd Method ◽  
Substrate Structure

In this work, Si, Ge element composition distribution in Ge /Si1-xGex:C /Si substrate structure has been characterized and modified by planar scanning energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD). The Ge /Si1-xGex:C /Si substrate samples are grown by chemical vapor deposition (CVD) method. The accuracy of EDS value can be improved by ~ 32%. And the modified EDS results indicate the Ge distribution in the Ge/Si1-xGex:C/Si sub structure.

Dependence of hydrogen embrittlement on annealing time in medium-Mn steels

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Juanping Xu ◽  
Jinxu Li ◽  
Zheng Wang ◽  
Hao Fu ◽  
Ming Wu
Keyword(s):  
Hydrogen Embrittlement ◽  
Annealing Time ◽  
Martensite Transformation ◽  
Design Methodology ◽  
Warm Rolling ◽  
X Ray Diffraction ◽  
Electron Backscattered Diffraction ◽  
Content Type ◽  
X Ray ◽  
Two Samples

Purpose The purpose of this paper is to investigate the effect of the soft annealing time on the microstructure and hydrogen embrittlement (HE) of Fe-0.22C-11.54Mn-2.05Al steels. Design/methodology/approach Steels A and B with different morphologies were prepared by cold rolling after warm rolling, long/short softening annealing and finally annealing at 700 °C for 30 min. Uncharged and charged samples were subjected to tensile, and HE behavior was studied by electron backscattered diffraction, scanning electron microscopy and X-ray diffraction. Findings The two samples exhibited similar tensile strengths. The homogeneous equiaxed microstructure of steel B was found to be more conducive to relieve its HE sensitivity. Steel A exhibited bimodal-grained microstructures – blocky and lath. The formation of crack in the blocky grains of steel A resulted in a significant reduction in its plasticity and tensile strength. Originality/value The high HE susceptibility of steel A is mainly connected with the inhomogeneity of martensite transformation.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

AlxGa1-xN-Based Materials and Heterostructures

1996 ◽  
Vol 449 ◽  
Author(s):  
P. Kung ◽  
A. Saxler ◽  
D. Walker ◽  
X. Zhang ◽  
R. Lavado ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Bragg Reflectors ◽  
X Ray Diffraction ◽  
Chemical Vapor Deposition Growth ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Dimensional Electron Gas ◽  
P Type

ABSTRACTWe present the metalorganic chemical vapor deposition growth, n-type and p-type doping and characterization of AlxGa1-xN alloys on sapphire substrates. We report the fabrication of Bragg reflectors and the demonstration of two dimensional electron gas structures using AlxGa1-xN high quality films. We report the structural characterization of the AlxGa1-xN / GaN multilayer structures and superlattices through X-ray diffraction and transmission electron microscopy. A density of screw and mixed threading dislocations as low as 107 cm-2 was estimated in AlxGa1-xN / GaN structures. The realization of AlxGa1-xN based UV photodetectors with tailored cut-off wavelengths from 365 to 200 nm are presented.

Compositional Modulation and its Optoelectric Properties of Zn(S,Se,Te) Crystals Grown by Hydrogen Radical-Enhanced CVD

1995 ◽  
Vol 417 ◽  
Author(s):  
Hiroyuki Fujiwara ◽  
Toshihiro Ii ◽  
Isamu Shimizu
Keyword(s):  
Deep Level ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Small Shift ◽  
X Ray ◽  
Compositional Modulation ◽  
Peak Energy ◽  
Large Lattice ◽  
The Difference ◽  
Hydrogen Radical

AbstractHigh-quality (ZnS)n(ZnSe)12n and (ZnSe)n(ZnTe)11n (n=1∼4) crystals were grown at a low temperature of 200°C by hydrogen radical-enhanced chemical vapor deposition. From satellite peaks in x-ray diffraction spectra, these periodic structure crystals were confirmed to be grown coherently on substrates, in spite of large lattice mismatches between the grown layers and the substrates (͛=4∼7%). In photoluminescence (PL) spectra of these films, strong band-edge emissions were predominantly observed, resulting from a suppression of deep-level emissions. We found that the PL peak energy of (ZnSe)n(ZnTe)11n shifts systematically to lower energy by 200 meV with changes in the number of ZnSe layers (n), while relatively small shift of 13 meV was observed in (ZnS)n(ZnSe)12n. These discrepancy can be attributed to the difference of band-lineups or chemical natures of constituent atoms in these crystals.

X-Ray and Magnetic Measurements of TmFeTi2O7

2014 ◽  
Vol 215 ◽  
pp. 470-473 ◽  
Author(s):  
Tamara V. Drokina ◽  
German A. Petrakovskii ◽  
Dmitrii A. Velikanov ◽  
Maksim S. Molokeev
Keyword(s):  
Spin Glass ◽  
Solid Phase ◽  
Magnetic Measurements ◽  
Diffraction Method ◽  
Freezing Temperature ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
X Ray Diffraction ◽  
X Ray ◽  
History Of

In this paper we are reported about a peculiarity of the crystal structure and the magnetic state of TmFeTi2O7. The compound TmFeTi2O7 has been synthesizedusing the solid-phase reaction method. Using X-ray diffraction method the disorder in the distribution of the iron ions over five nonequivalent crystal sites was observed, also the populations of the iron atoms positions were determined. We show that below Tf = 6 K the magnetization of TmFeTi2O7 depends on the magnetic history of the sample. There are indications for spin glass state. This results allow us to assume the state of spin glass is realized below freezing temperature Tf = 6 K in TmFeTi2O7.

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