The Role of H in the Growth Mechanism of PECVD a-Si:H
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AbstractThis paper describes an extension of the silyl radical based kinetic growth model by atomic hydrogen induced surface hydrogen abstraction processes. It is shown that by including this direct abstraction process several problems of the SiH 3 based model are resolved. The defect density can be predicted with the proper temperature dependence and order of magnitude. The implications for high rate deposition of a-Si:H are discussed
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2020 ◽
Vol 11
(SPL1)
◽
pp. 967-971
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2021 ◽
Vol 503
(2)
◽
pp. 3081-3088
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