The Oxidation of Ni and Ni-20Cr Deposited with Chromia Thin Films VIA Combustion CVD

1998 ◽  
Vol 555 ◽  
Author(s):  
A. E. Alexiou ◽  
M. R. Hendrick ◽  
J. M. Hampikian

AbstractChromia thin films were deposited onto substrates of Ni and Ni-20Cr by gaseous fuel combustion chemical vapor deposition. The chemical precursor utilized to achieve chromia films was aqueous 0.27M chromium nitrate, and the depositions took place within the flame at temperatures between 200 and 550°C. Amorphous coatings were deposited between 200 and 375°C, whereas crystalline coatings of chromia (eskolaite) were deposited between 400 and 550°C. The eskolaite deposition rate was approximately five times faster than the amorphous chromia. Chromia coatings containing 2 wt% yttria were also formed. The deposition temperature necessary to form crystalline chromia/yttria coatings was slightly higher (∼50°C) than those containing chromia only. The ability of the various coatings to provide oxidation protection was characterized using thermogravimetric analysis (TGA). The eskolaite coatings that are at least 1 im thick reduce the oxidation mass gain/area of Ni-20Cr by nearly a factor of ten and the parabolic constant by an order of magnitude, whereas the amorphous chromia coatings that are 0.6 μm thick do not demonstrate such an improvement. Yttria-doped chromia coatings further reduce the parabolic constant by two orders of magnitude, consistent with expectation. Characterization of the coatings was accomplished using a variety of techniques, including SEM, TEM, EDS, and XRD.

1992 ◽  
Vol 271 ◽  
Author(s):  
R. Morancho ◽  
A. Reynes ◽  
M'b. Amjoud ◽  
R. Carles

ABSTRACTTwo organosilicon molecules tetraethysilane (TESi) and tetravinylsilane (TVSi) were used to prepare thin films of silicon carbide by chemical vapor deposition (C. V. D.). In each of the molecule, the ratio C/Si = 8, the only difference between TESi and TVSi is the structure of the radicals ethyl (.CH2-CH3) and vinyl (.CH=CH2). This feature induces different thermal behavior and leads to the formation of different materials depending on the nature of the carrier gas He or H2· The decomposition gases are correlated with the material deposited which is investigated by I.R. and Raman spectroscopy. The structure of the starting molecule influences the mechanisms of decomposition and consequently the structure of the material obtained.


RSC Advances ◽  
2016 ◽  
Vol 6 (6) ◽  
pp. 4867-4871 ◽  
Author(s):  
Mingxian Wang ◽  
Weiguang Wang ◽  
Zhao Li ◽  
Xuejian Du ◽  
Xianjin Feng ◽  
...  

TiO2 thin films with anatase structure have been prepared on [LaAlO3]0.3[SrAl0.5Ta0.5O3]0.7 (LSAT) (001) substrates by metalorganic chemical vapor deposition (MOCVD) in the substrate temperature range of 500–650 °C.


2018 ◽  
Vol 2018 (1) ◽  
pp. 46-53 ◽  
Author(s):  
Michelle M. Nolan ◽  
Alexander J. Touchton ◽  
Nathaniel E. Richey ◽  
Ion Ghiviriga ◽  
James R. Rocca ◽  
...  

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