Chemical Vapor Deposition (CVD) of Parylene Films using Liquid Source Delivery

1998 ◽  
Vol 555 ◽  
Author(s):  
Chongying Xu ◽  
Thomas H. Baum
Keyword(s):  
Thermogravimetric Analysis ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Xrd Analysis ◽  
Polymeric Films ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Liquid Source ◽  
Pyrolysis Unit

AbstractParylene-N films were formed on silicon substrates at a substrate temperature of −20 °C and pressures from 4 - 7 torr via liquid source precursor delivery. [2.2 ] Paracyclophane, the precursor of parylene-N, was dissolved in an organic solvent and delivered into a vaporizer / pyrolysis unit. The solution was vaporized at ∼ 200 °C and its vapor was cracked at ∼ 700 °C to generate the reactive morromeric species. Films were grown by condensation and polymerization, and analyzed by infrared (FTIR), thermogravimetric analysis (TGA) and X-ray diffraction (XRD) analysis. These analyses indicated the formation of parylene-N films without detectable solvent contamination or incorporation into the polymeric films.

Characteristics of Gallium Oxide Nanowires Synthesized by the Metalorganic Chemical Vapor Deposition

2007 ◽  
Vol 539-543 ◽  
pp. 1230-1235 ◽  
Author(s):  
Hyoun Woo Kim ◽  
S.H. Shim
Keyword(s):  
Chemical Vapor Deposition ◽  
Cross Sections ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Metalorganic Chemical

We have synthesized the high-density Ga2O3 nanowires on gold (Au)-coated silicon substrates using metalorganic chemical vapor deposition. The nanowires exhibited one-dimensional structures having circular cross sections with diameters in the range of 30-200 nm. The energy dispersive x-ray spectroscopy revealed that the nanowires contained elements of Ga and O, without Au-related impurities. X-ray diffraction analysis and high-resolution transmission electron microscopy showed that the Ga2O3 nanowires were crystalline.

Crystalline Orientation of PbTiO3 Nanorods Grown by MOCVD Using ZnO Nanorods as a Template

2011 ◽  
Vol 1292 ◽  
Author(s):  
Hironori Fujisawa ◽  
Masaru Shimizu ◽  
Ryohei Kuri ◽  
Seiji Nakashima ◽  
Yasutoshi Kotaka ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Zno Nanorods ◽  
Chemical Vapor ◽  
Piezoresponse Force Microscopy ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Crystalline Orientation ◽  
X Ray ◽  
Force Microscopy

ABSTRACTPbTiO3-covered ZnO nanorods were grown on Al2O3$\left({11\bar 20} \right)$ by metalorganic chemical vapor deposition (MOCVD), and their crystalline orientation was investigated by x-ray diffraction (XRD). Structural analysis by scanning electron microscopy and XRD revealed that the hexagonal ZnO nanorods had $\left\{ {10\bar 10} \right\}$-side facets. XRD analysis of PbTiO3 thin films on ZnO$\left({10\bar 10} \right)$/Al2O3$\left({10\bar 10} \right)$revealed that PbTiO3 was epitaxially grown on ZnO$\left({10\bar 10} \right)$, showing 6 variants of crystallites with the c-axis tilted either 27o or 69o from the surface normal to the ZnO$\left({10\bar 10} \right)$ plane. Effective piezoelectric coefficients calculated for the 27o and 69o-crystallites using piezoresponse force microscopy confirm that deformation of nanorods and nanotubes contributed to the large electrically-induced strain along the radial direction.

Structure, Composition, and Properties of Mocvd ZrO2 Thin Films

1989 ◽  
Vol 168 ◽  
Author(s):  
Seshu B. Desu ◽  
Tian Shi ◽  
Chi K. Kwok
Keyword(s):  
Vapor Deposition ◽  
Low Temperatures ◽  
Electron Spectroscopy ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fine Grained ◽  
Low Pressures ◽  
Constant Refractive Index

AbstractZrO2 films were deposited on silicon substrates at temperatures from 350 to 550 °C by metallorganic chemical vapor deposition (MOCVD) using zirconium acetylacetonates. Depositions were carried out at both atmospheric and low pressures. The optical properties, structure, microstructure, and composition of these films were characterized by Ellipsometer, X-ray diffraction, scanning electron microscopy (SEM), and electron spectroscopy for chemical analysis (ESCA), respectively. The deposition was kinetically controlled at low temperatures and mass transfer controlled at high temperatures. Use of zirconium (IV) acetylacetonate resulted in cubic ZrO2 with some carbon contamination whereas, tetragonal pure ZrO2 were obtained with the precursor zirconium (IV) trifluroacetylacetonate. The tetragonal ZrO2 films are fine grained and showed preferential orientation. The measured values of dielectric constant, refractive index, and electrical resistivity of ZrO2 films are 18, 2.0, and 5E13 Ohm.cm, respectively.

Synthesis and Photoluminescence of Single-Crystalline Fe(III)-Doped CdS Nanobelts

2016 ◽  
Vol 16 (4) ◽  
pp. 4086-4093 ◽  
Author(s):  
Muhammad Arshad Kamran ◽  
Bingsuo Zou ◽  
A Majid ◽  
Thamer Alharbi ◽  
M. A Saeed ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Xrd Analysis ◽  
Fe Doping ◽  
X Ray Diffraction ◽  
X Ray ◽  
Orange Emission ◽  
Simple Chemical ◽  
Cds Nanobelts ◽  
First Time

In this paper, we report the synthesis and optical properties of Fe(III) doped CdS nanobelts (NBs) via simple Chemical Vapor Deposition (CVD) technique to explore their potential in nano-optics. The energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD) analysis manifested the presence of Fe(III) ions in the NBs subsequently confirmed by the peak shifting to lower phonon energies as recorded by Raman spectra and shorter lifetime in ns. Photoluminescence (PL) spectrum investigations of the single Fe(III)-doped CdS NBs depicted an additional PL peak centered at 573 nm (orange emission) in addition to the bandedge(BE) emission. The redshift and decrease in the BE intensity of the PL peaks, as compared to the bulk CdS, confirmed the quenching of spectra upon Fe doping. The synthesis and orange emission for Fe-doped CdS NBs have been observed for the first time and point out their potential in nanoscale devices.

OMCVD of thin films from metal diketonates and triphenylbismuth

1990 ◽  
Vol 5 (6) ◽  
pp. 1169-1175 ◽  
Author(s):  
A. D. Berry ◽  
R. T. Holm ◽  
M. Fatemi ◽  
D. K. Gaskill
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Strontium Barium ◽  
X Ray ◽  
Scanning Electron

Films containing the metals copper, yttrium, calcium, strontium, barium, and bismuth were grown by organometallic chemical vapor deposition (OMCVD). Depositions were carried out at atmospheric pressure in an oxygen-rich environment using metal beta-diketonates and triphenylbismuth. The films were characterized by Auger electron spectroscopy, Nomarski and scanning electron microscopy, and x-ray diffraction. The results show that films containing yttrium consisted of Y2O3 with a small amount of carbidic carbon, those with copper and bismuth were mixtures of oxides with no detectable carbon, and those with calcium, strontium, and barium contained carbonates. Use of a partially fluorinated barium beta-diketonate gave films of BaF2 with small amounts of BaCO3.

Real-Time Composition And Thickness Control Techniques In A Metalorganic Chemical Vapor Deposition Process

1995 ◽  
Vol 406 ◽  
Author(s):  
M. S. Gaffneyt ◽  
C. M. Reavesl ◽  
A. L Holmes ◽  
R. S. Smith ◽  
S. P. DenBaars
Keyword(s):  
Chemical Vapor Deposition ◽  
Real Time ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Normal Operation ◽  
Growth Monitoring ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metalorganic Chemical

AbstractMetalorganic chemical vapor deposition (MOCVD) is a process used to manufacture electronic and optoelectronic devices that has traditionally lacked real-time growth monitoring and control. We have developed control strategies that incorporate monitors as real-time control sensors to improve MOCVD growth. An analog control system with an ultrasonic concentration monitor was used to reject bubbler concentration disturbances which exist under normal operation, during the growth of a four-period GaInAs/InP superlattice. Using X-ray diffraction, it was determined that the normally occurring concentration variations led to a wider GaInAs peak in the uncompensated growths as compared to the compensated growths, indicating that closed loop control improved GaInAs composition regulation. In further analysis of the X-ray diffraction curves, superlattice peaks were used as a measure of high crystalline quality. The compensated curve clearly displayed eight orders of satellite peaks, whereas the uncompensated curve shows little evidence of satellite peaks.

Chemical Vapor Deposition of Strontium-Barium-Niobate

1991 ◽  
Vol 243 ◽  
Author(s):  
A. Greenwald ◽  
M. Horenstein ◽  
M. Ruane ◽  
W. Clouser ◽  
J. Foresi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Strontium Barium Niobate ◽  
Electrical And Optical Properties ◽  
Strontium Barium ◽  
X Ray ◽  
Boston University

AbstractSpire Corporation has deposited strontium-barium-niobate by chemical vapor deposition at atmospheric pressure using Ba(TMHD), Sr(TMHD), and Nb ethoxide. Deposition temperature as 550°C in an isothermal furnace. Films were deposited upon silicon (precoated with silica), platinum, sapphire, and quartz. Materials were characterized by RBS, X-ray diffraction, EDS, electron, and optical microscopy. Electrical and optical properties were measured at Boston University.

Stress in Hydrogenated Microcrystalline Silicon Thin Films

1999 ◽  
Vol 557 ◽  
Author(s):  
D. Peiró ◽  
C. Voz ◽  
J. Bertomeu ◽  
J. Andreu ◽  
E. Martínez ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Vapor Deposition ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Hot Wire ◽  
X Ray Diffraction ◽  
Microcrystalline Silicon ◽  
X Ray ◽  
Silicon Thin Films ◽  
Abrupt Changes

AbstractHydrogenated microcrystalline silicon films have been obtained by hot-wire chemical vapor deposition (HWCVD) in a silane and hydrogen mixture at low pressure (<5 × 10-2 mbar). The structure of the samples and the residual stress were characterised by X- ray diffraction (XRD). Raman spectroscopy was used to estimate the volume fraction of the crystalline phase, which is in the range of 86 % to 98%. The stress values range between 150 and -140 MPa. The mechanical properties were studied by nanoindentation. Unlike monocrystalline wafers, there is no evidence of abrupt changes in the force-penetration plot, which have been attributed to a pressure-induced phase transition. The hardness was 12.5 GPa for the best samples, which is close to that obtained for silicon wafers.

The process and mechanism of the GaN nanoparticles formed by nitridation of β-Ga2O3 crystal

2017 ◽  
Vol 31 (10) ◽  
pp. 1750108 ◽  
Author(s):  
Xiao-Jun Cui ◽  
Liang-Ling Wang
Keyword(s):  
Vapor Deposition ◽  
Surface Defect ◽  
Chemical Vapor ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Diffraction Peaks ◽  
Relationship Of ◽  
Gan Film

The process of conversion from [Formula: see text]-Ga2O3 single crystal to gallium nitride (GaN) in an atmosphere of NH3 by chemical vapor deposition is investigated. The surface morphology and microstructure of the GaN nanoparticles are observed by scanning electron microscope, which indicates that the growth of GaN is via the Volmer–Weber mechanism. The [Formula: see text]-Ga2O3 is firstly evaporated at high temperature to form the porous layer, followed by the surface-defect induced GaN nucleation formation. The crystalline structure and epitaxial relationship of the GaN nanoparticles are investigated by X-ray diffraction (XRD) via [Formula: see text]–[Formula: see text], showing GaN (0002) and (0004) diffraction peaks in the XRD spectra. It is concluded that the polycrystalline GaN film with hexagonal structure has a strong c-axis preferential orientation.

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