A New Series Of Al-Pd-Based Ordered Icosahedral Quasicrystals And Their Electrical Resistivities

1998 ◽  
Vol 553 ◽  
Author(s):  
R Tamura ◽  
T Asao ◽  
M Tamura ◽  
S Takeuchif ◽  
T Shibuya
Keyword(s):  
Electronic Transport ◽  
Room Temperature ◽  
Negative Temperature Coefficient ◽  
Negative Temperature ◽  
Resistivity Ratio ◽  
X Ray ◽  
Resistivity Measurements ◽  
Annealing Temperatures ◽  
Electrical Resistivities ◽  
Icosahedral Quasicrystals

AbstractX-ray measurements on samples of Al-Pd-(Fe,Ru,Os) systems with various annealing temperatures and times have been performed in order to gain insights into formations of icosahedral (I) phases and related approximants and to produce single phases of them. As a result, well ordered I phases have been obtained in Al-Pd-(Ru,Os) systems when annealed at 1000 °C for several hours. Formations of the (1/0-1/0-1/0) and the (2/1-2/1-2/1) approximants have been observed in wide compositional ranges in Al-Pd-(Fe,Ru,Os) and Al-Pd-(Ru,Os) systems, respectively. Electrical resistivity measurements of I phases and related approximants are performed as a function of temperature. The resistivity of I phases at room temperature is as high as that of highly resistive I phases such as Al-Pd-Mn and AI-Cu-(Fe,Ru) systems and the resistivity ratio (P12K/P300K) reaches about 1.5 in Al-Pd-Ru I phases. A negative temperature coefficient of the resistivity is observed in (1/0-1/0-1/0) approximants of Al-Pd-(Fe,Ru) systems, which indicates the electronic transport is quite anomalous even in the lowest approximant of the I phase.

Preparation and Characterizations of Novel Near Room-Temperature Driven Fe/Sr2Bi2O5 Thermocatalyst

2014 ◽  
Vol 804 ◽  
pp. 63-66
Author(s):  
Pei Wu ◽  
Xue Gang Luo ◽  
Xiao Yan Lin ◽  
Ke Li
Keyword(s):  
Room Temperature ◽  
Negative Temperature Coefficient ◽  
Removal Rate ◽  
Negative Temperature ◽  
X Ray Diffraction ◽  
Total Removal ◽  
Solid State Method ◽  
X Ray ◽  
Conventional Solid State Method ◽  
Molar Percent

In this study, room-temperature driven thermocatalyst (Fe/Sr2Bi2O5 powder) with negative temperature coefficient resistor (NTC) characteristics was prepared by conventional solid state method at various temperatures. Fe/Sr2Bi2O5 powder was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive X-ray spectroscopy EDS. The results indicate that Fe/Sr2Bi2O5 powder was prepared and the Fe has been doped successfully in Sr2Bi2O5. The thermocatalyst powder obtained a particular and stable crystal style, meanwhile, besides, well distributed size and rough surface were also found in regard to the thermocatalyst above. On the other hand, the thermocatalyst reactions show that Fe/Sr2Bi2O5 powder has highest removal rate of degradation under the 0.75% (molar percent) content of Fe at 750 oC. The total removal rate of degradation arrives at 93.8% after 3h at 50 oC. Hence, Fe/Sr2Bi2O5 powder may be a potential thermocatalyst at room-temperature for wastewater treatment in the future.

Effects of Cd and Cd-Cu Doping on the Microstructure and Electrical Properties of NiMnCoO NTC Ceramics

2011 ◽  
Vol 236-238 ◽  
pp. 1632-1635 ◽  
Author(s):  
Guo Na ◽  
Ya Dong Li
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Negative Temperature Coefficient ◽  
Negative Temperature ◽  
High Thermal Stability ◽  
X Ray Diffraction ◽  
Solid Reaction ◽  
Cu Doping ◽  
X Ray ◽  
Cd Doping

The precursors of CdxNi1-xCo0.2Mn1.8O4(x=0,0.1,0.2,0.3) and Cd0.2Cu0.1Ni0.7Co0.2Mn1.8O4negative temperature coefficient (NTC) ceramics were prepared at room temperature by the solid reaction. These precursors were calcined and then sintered in air at 1100°C. Influence of the Cd and Cd-Cu doping on the microstructure and electrical properties of the NTC ceramics were investigated by X-ray diffraction and SEM technique. The results showed that Cd doping was conducive to reduce the grain size, increase density, and obtain high thermal stability.

Structural, optical and electrical properties of thermal evaporated nano sized In2Te3 thin films

2018 ◽  
Vol 1 (1) ◽  
pp. 21-25
Author(s):  
R Revathi ◽  
R Karunathan
Keyword(s):  
Thin Films ◽  
Negative Temperature Coefficient ◽  
Thermal Evaporation ◽  
Structural Parameters ◽  
Negative Temperature ◽  
Resistivity Measurements ◽  
Allowed Transition ◽  
Evaporation Technique ◽  
Indium Telluride ◽  
Made In

Indium Telluride thin films were prepared by thermal evaporation technique. Films were annealed at 573K under vacuum for an hour. Both as-deposited and annealed films were used for characterization. The structural parameters were discussed on the basis of annealing effect for a film of thickness 1500 Å. Optical analysis was carried out on films of different thicknesses for both as - deposited and annealed samples. Both the as- deposited and annealed films exhibit direct and allowed transition. Electrical resistivity measurements were made in the temperature range of 303-473 K using Four-probe method. The calculated resistivity value is of the order of 10-6 ohm meter. The activation energy value decreases with increasing film thickness. The negative temperature coefficient indicates the semiconducting nature of the film.

Aging of iron manganite negative temperature coefficient thermistors

1998 ◽  
Vol 13 (5) ◽  
pp. 1238-1242 ◽  
Author(s):  
T. Battault ◽  
R. Legros ◽  
A. Rousset
Keyword(s):  
Temperature Coefficient ◽  
Spinel Structure ◽  
Negative Temperature Coefficient ◽  
Negative Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Octahedral Sites ◽  
Before And After ◽  
Structural Equilibrium ◽  
Electrical Data

“Aging,” defined as the drift of resistance with temperature after 1000 h, was investigated for iron manganite temperature coefficient thermistors. For these devices, aging is relatively large, about 10%. The cationic distributions before and after aging were determined by Mössbauer spectroscopy. These distributions explain all the x-ray diffraction and correlated electrical data. The origin of the aging observed on iron manganites thermistors has been identified. It is due to the migration of Fe3+ ions from tetrahedral to octahedral sites of the spinel structure in order to reach a structural equilibrium.

Evolution of crystal structure of dual layered molecular conductor (ET)4ZnBr4(C6H4Cl2) with temperature

CrystEngComm ◽  
2021 ◽  
Author(s):  
Gennady V. Shilov ◽  
Elena I. Zhilyaeva ◽  
Sergey M. Aldoshin ◽  
Alexandra M Flakina ◽  
Rustem B. Lyubovskii ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electrical Resistivity ◽  
Single Crystal ◽  
Room Temperature ◽  
Organic Conductor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Resistivity Measurements ◽  
Molecular Conductor ◽  
Abrupt Changes

Electrical resistivity measurements of a dual layered organic conductor (ET)4ZnBr4(1,2-C6H4Cl2) above room temperature show abrupt changes in resistivity at 320 K. Single-crystal X-ray diffraction studies in the 100-350 K range...

scholarly journals Ferrite-based room temperature negative temperature coefficient printed thermistors

2020 ◽  
Vol 56 (24) ◽  
pp. 1322-1324
Author(s):  
J.R. McGhee ◽  
J.S. Sagu ◽  
D.J. Southee ◽  
P.S.A. Evans ◽  
K.G.U. Wijayantha
Keyword(s):  
Temperature Coefficient ◽  
Room Temperature ◽  
Negative Temperature Coefficient ◽  
Negative Temperature

scholarly journals Effect of Annealing Temperature on CuInSe2/ZnS Thin-Film Solar Cells Fabricated by Using Electron Beam Evaporation

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
H. Abdullah ◽  
S. Habibi
Keyword(s):  
Electron Beam ◽  
Solar Cells ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Electron Beam Evaporation ◽  
Thin Film Solar Cells ◽  
X Ray ◽  
Annealing Temperatures ◽  
Pure Cu ◽  
Deposited Films

CuInSe2(CIS) thin films are successfully prepared by electron beam evaporation. Pure Cu, In, and Se powders were mixed and ground in a grinder and made into a pellet. The pallets were deposited via electron beam evaporation on FTO substrates and were varied by varying the annealing temperatures, at room temperature, 250°C, 300°C, and 350°C. Samples were analysed by X-ray diffractometry (XRD) for crystallinity and field-emission scanning electron microscopy (FESEM) for grain size and thickness. I-V measurements were used to measure the efficiency of the CuInSe2/ZnS solar cells. XRD results show that the crystallinity of the films improved as the temperature was increased. The temperature dependence of crystallinity indicates polycrystalline behaviour in the CuInSe2films with (1 1 1), (2 2 0)/(2 0 4), and (3 1 2)/(1 1 6) planes at 27°, 45°, and 53°, respectively. FESEM images show the homogeneity of the CuInSe2formed. I-V measurements indicated that higher annealing temperatures increase the efficiency of CuInSe2solar cells from approximately 0.99% for the as-deposited films to 1.12% for the annealed films. Hence, we can conclude that the overall cell performance is strongly dependent on the annealing temperature.

scholarly journals Structure, dielectric and electrical properties of relaxor lead-free double perovskite: Nd2NiMnO6

2019 ◽  
Vol 13 (1) ◽  
pp. 1-11 ◽  
Author(s):  
Rutuparna Das ◽  
Ram Choudhary
Keyword(s):  
Ac Conductivity ◽  
Negative Temperature Coefficient ◽  
Complex Impedance ◽  
Double Perovskite ◽  
Negative Temperature ◽  
Solid State Reaction Method ◽  
Temperature Coefficient Of Resistance ◽  
X Ray ◽  
Impedance Data ◽  
Nyquist Plots

In this paper, dielectric relaxor, impedance, AC conductivity and electrical modulus of double perovskite Nd2NiMnO6, prepared by a solid state reaction method and sintered at 1250?C, have been reported in the wide temperature (25-150?C) and frequency (1 kHz-1MHz) ranges. From the preliminary X-ray structural analysis, it is found that the structure of the material is monoclinic. In the study of the temperature dependence of the dielectric constant, the relaxor behaviour of the material is observed. Such type of behaviour is explained by a modified Curie-Weiss and a Vogel-Fulcher law. By analysing Nyquist plots, the existence of grain and grain boundary effects is established. The non-Debye type of relaxation is investigated by the analysis of complex impedance and the modulus data. From the study of impedance data, it is found that the grain resistance is reduced with the increase in temperature indicating the existence of negative temperature coefficient of resistance (NTCR) behaviour in the material which also matches with temperature versus AC conductivity plots. From these results, it may be concluded that this compound may have extreme potential for different high temperature applications.

scholarly journals Development of Auto Thermal Control Device For Space Air - Conditioning

2021 ◽  
pp. 193-204
Author(s):  
Akinde Olusola Kunle ◽  
Maduako Kingsley Obinna ◽  
Akande, Kunle Akinyinka ◽  
Adeaga Oyetunde Adeoye
Keyword(s):  
Temperature Coefficient ◽  
Room Temperature ◽  
Negative Temperature Coefficient ◽  
Negative Temperature ◽  
Thermal Control ◽  
Positive Temperature Coefficient ◽  
Control Device ◽  
Thermal Source ◽  
Positive Temperature ◽  
Ntc Thermistor

Auto Thermal Control device is an electronic based device which employs the application of temperature sensors to controlling household appliances without human interference directly. In this work, thermal source is used to regulate electrical fan and room heater depending on ambient temperature. The room heater, which is adjusted to a set temperature, switches ‘ON’ when the temperature of a room is low (cold). While the same is switches ‘OFF’ with increase in the room temperature. This triggers ‘ON’ an electric fan at different speeds, and thus cools the room. A temperature sensor, tthermistor, monitors change in room temperature. Two types of thermistor exists: Positive Temperature Coefficient, PTC. An increasee in the resistance of PTC results in increasee in temperature). In the Negative Temperature Coefficient, NTC; a decreasee in resistance yields to temperature increase. This article explored a NTC thermistor. The design could be a ready product in the market of the developing nation where environmental automation is yet fully deployed.

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