Metal-Insulator Transitionlike Behavior In Several Icosahedral Phases

1998 ◽  
Vol 553 ◽  
Author(s):  
S. J. Poon ◽  
F. Zavaliche ◽  
C. Beeli
Keyword(s):  
Alloy Composition ◽  
Electronic States ◽  
Electron Localization ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Similar Investigation ◽  
Icosahedral Phases ◽  
Effects Of Disorder ◽  
Electron Transport Properties ◽  
Quasiperiodic Systems

AbstractThe highly non-metallic electron transport properties in icosahedral Al70.5Pd21(Re,Mn)8.5 phases and their dependence on alloy composition and sample preparation are reviewed and fuirther studied. The study has led to the highest resistivity ratios ρ(4.2K)/ρ(295K)˜280 reported so far on i-AIPdRe alloys. Similar investigation has also resulted in enhanced resistivity ratios in i-AlCuOs. Evidences for the metal-insulator transition in these i-alloys are documented and discussed in light of the new results. Electron diffraction studies (article by Beeli, Poon, Guo, and Haussler in this Conference Proceedings) have provided evidence for electron localization induced by phason disorder. These findings may provide the basis for understanding the nature of electronic states and effects of disorder on electron localization in quasiperiodic systems.

Disorder-induced electron localization in molecular-based materials

2017 ◽  
Author(s):  
Sven Stafström ◽  
Mikael Unge
Keyword(s):  
Electronic State ◽  
Molecular Crystal ◽  
Molecular Crystals ◽  
Localization Length ◽  
Finite Size ◽  
The Other ◽  
Electron Localization ◽  
Finite Size Scaling ◽  
Metal Insulator Transition ◽  
Metal Insulator

This article examines disorder-induced electron localization in molecular-based materials, using DNA and pentacene molecular crystals as examples. In DNA, the disorder is intrinsic and strong, resulting in very short localization lengths. The pentacene crystal, on the other hand, is intrinsically homogeneous and the disorder is extrinsic and weak, which makes a metal–insulator transition (MIT) possible. After providing an overview of carbon-based materials for electronic applications, the article explains the methodology for calculating the localization properties of a DNA double strand and a pentacene molecular crystal, namely Hamiltonian, transfer matrix, and finite-size scaling. It also discusses the results, which show a substantial increase in the localization length of the electronic state with correlated disorder as compared to the case of uncorrelated disorder.

Unoccupied electronic states inNiS2−xSexacross the metal-insulator transition

1998 ◽  
Vol 57 (12) ◽  
pp. 6984-6988 ◽  
Author(s):  
D. D. Sarma ◽  
M. Pedio ◽  
M. Capozi ◽  
A. Girycki ◽  
Nirmala Chandrasekharan ◽  
...  
Keyword(s):  
Electronic States ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Pressure induced multi-centre bonding and metal–insulator transition in PtAl2

2019 ◽  
Vol 21 (24) ◽  
pp. 13337-13346 ◽  
Author(s):  
P. Modak ◽  
Ashok K. Verma
Keyword(s):  
Insulator Transition ◽  
Electron Localization Function ◽  
Electron Localization ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Localization Function ◽  
Charge Localization

An electron localization function showing interstitial charge localization and multi-centre bonding in an insulating Cmcm phase is studied.

Stability of electronic states across the metal-insulator transition inPrRu4P12

2008 ◽  
Vol 77 (16) ◽  
Author(s):  
A. Yamasaki ◽  
S. Imada ◽  
A. Sekiyama ◽  
H. Fujiwara ◽  
M. Yano ◽  
...  
Keyword(s):  
Electronic States ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator
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