Experimental Study of the Effect of the Quantum Well Structures on the Thermoelectric Figure of Merit in Si/Si1-xGex System

1998 ◽  
Vol 545 ◽  
Author(s):  
X. Sun ◽  
J. Liu ◽  
S. B. Cronin ◽  
K. L. Wang ◽  
G. Chen ◽  
...  
Keyword(s):  
Experimental Study ◽  
Quantum Well ◽  
Figure Of Merit ◽  
Quantum Confinement Effect ◽  
Multiple Quantum Well ◽  
Silicon On Insulator ◽  
Multiple Quantum ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Quantum Well Structures

AbstractIn bulk form, Si1-xGex is a promising thermoelectric material for high temperature applications. In this paper, we report results from an experimental study as well as theoretical modeling of the quantum confinement effect on the enhancement of the thermoelectric figure of merit. Si/Si1-xGex, multiple quantum well structures are fabricated using molecular beam epitaxy (MBE) on SOI (Silicon-on-Insulator) substrates in order to eliminate substrate effects, especially on the Seebeck coefficient. A method to eliminate the influence of the buffer layer on the thermoelectric characterization is presented. An enhancement of the thermoelectric figure of merit within the quantum well over the bulk value is observed.

Effect of Quantum-Well Structures on the Thermoelectric Figure of Merit in the Si/Si1-xGex System

1996 ◽  
Vol 452 ◽  
Author(s):  
X. Sun ◽  
M. S. Dresselhaus ◽  
K. L. Wang ◽  
M. O. Tanner
Keyword(s):  
Quantum Well ◽  
Quantum Confinement ◽  
Figure Of Merit ◽  
Molecular Beam ◽  
Theoretical Calculations ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Quantum Well Structures ◽  
Quantum Confinement Effects ◽  
Proof Of Principle

AbstractThe Si/Si1-xGex quantum well system is attractive for high temperature thermoelectric applications and for demonstration of proof-of-principle for enhanced thermoelectric figure of merit Z, since the interfaces and carrier densities can be well controlled in this system. We report theoretical calculations for Z in this system, based on which Si/Si1-xGex quantum-well structures were grown by molecular-beam epitaxy. Thermoelectric and other transport measurements were made, indicating that an increase in Z over bulk values is possible through quantum confinement effects in the Si/Si1-xGex quantum-well structures.

Experimental study of the Γ-Xelectron transfer in type-II (Al,Ga)As/AlAs superlattices and multiple-quantum-well structures

1990 ◽  
Vol 42 (9) ◽  
pp. 5809-5821 ◽  
Author(s):  
J. Feldmann ◽  
J. Nunnenkamp ◽  
G. Peter ◽  
E. Göbel ◽  
J. Kuhl ◽  
...  
Keyword(s):  
Experimental Study ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Type Ii ◽  
Quantum Well Structures

The Effect of Quantum Well Structures on the Thermoelectric Figure of Merit

1992 ◽  
Vol 281 ◽  
Author(s):  
L. D. Hicks ◽  
M. S. Dresselhaus
Keyword(s):  
Quantum Well ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Thermoelectric Coolers ◽  
Quantum Well Structures ◽  
Thermoelectric Refrigeration ◽  
Superlattice Structures ◽  
Materials Used ◽  
Made In

ABSTRACTCurrently the materials with the highest thermoelectric figure of merit, Z, are Bi2Te3 alloys. Therefore these compounds are the best thermoelectric refrigeration elements. However, since the 1960's only slow progress has been made in enhancing Z, either in Bi2Te3 alloys or in other thermoelectric materials. So far, the materials used in applications have all been in bulk form. In this paper, it is proposed that it may be possible to increase Z of certain materials by preparing them in quantum well superlattice structures. Calculations have been done to investigate the potential for such an approach, and also to evaluate the effect of anisotropy on the figure of merit. The calculations show that layering has the potential to increase significantly the figure of merit of a highly anisotropic material like Bi2Te3, provided that the superlattice multilayers are made in a particular orientation. This result opens the possibility of using quantum well superlattice structures to enhance the performance of thermoelectric coolers.

Experimental Study of Spontaneous Emission in Bragg Multiple- Quantum-Well Structures with InAs Single-Layer Quantum Wells

2018 ◽  
Vol 52 (7) ◽  
pp. 877-880
Author(s):  
G. Pozina ◽  
M. A. Kaliteevski ◽  
E. V. Nikitina ◽  
A. R. Gubaidullin ◽  
K. A. Ivanov ◽  
...  
Keyword(s):  
Experimental Study ◽  
Quantum Well ◽  
Quantum Wells ◽  
Spontaneous Emission ◽  
Multiple Quantum Well ◽  
Single Layer ◽  
Multiple Quantum ◽  
Quantum Well Structures

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures
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