Preparation of SiC Thin Film Using Organosilicon by Remote Plasma CVD Method

1998 ◽  
Vol 544 ◽  
Author(s):  
Ying-Yu Xu ◽  
Takahiro Muramatsu ◽  
Toru Aoki ◽  
Yoichiro Nakanishi ◽  
Yoshinori Hatanaka
Keyword(s):  
Thin Film ◽  
Film Deposition ◽  
Plasma Cvd ◽  
Remote Plasma ◽  
Cvd Method ◽  
Gas Source ◽  
Thin Film Preparation ◽  
Hydrogen Radicals ◽  
Deposited Film ◽  
Deposited Films

AbstractAn organosilicon compound, hexamethyldisilane (HMDS) was incorporated for SiC thin film preparation by remote plasma enhanced CVD method. We investigated how plasma excited radicals react with source monomers using two kinds of gas mixtures. It was found that film component and formation mechanism depends on stronger on plasma gases. Using a mixture of nitrogen and hydrogen gases as plasma gas source, deposited films contained large amounts of nitrogen. When uing an argon and hydrogen mixture, deposited film was a SiC with large hydrogen contents. In this research, we found that hydrogen radicals are very active for decomposition of monomer source gas and this can be related to precursors for film deposition. When using a mixture of argon and hydrogen as plasma gas, the film deposition speed was influenced by substrate temperature. The estimated activation energy was larger than the case of using nitrogen and hydrogen gases. Different reaction mechanisms were observed for different plasma gas source

Deposition of a-SiC:H thin film from organosilicon material by remote plasma CVD method

2000 ◽  
Vol 368 (2) ◽  
pp. 181-184 ◽  
Author(s):  
Y.-Y Xu ◽  
T Muramatsu ◽  
M Taniyama ◽  
T Aoki ◽  
Y Hatanaka
Keyword(s):  
Thin Film ◽  
Plasma Cvd ◽  
Remote Plasma ◽  
Cvd Method

Large-scale, high-efficiency thin-film silicon solar cells fabricated by short-pulsed plasma CVD method

2006 ◽  
Vol 90 (18-19) ◽  
pp. 3416-3421 ◽  
Author(s):  
Y. Fujioka ◽  
A. Shimizu ◽  
H. Fukuda ◽  
T. Oouchida ◽  
S. Tachibana ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Large Scale ◽  
High Efficiency ◽  
Silicon Solar Cells ◽  
Pulsed Plasma ◽  
Plasma Cvd ◽  
Cvd Method ◽  
Thin Film Silicon

Diamond thin film synthesis by dc glow plasma CVD method

Vacuum ◽  
1991 ◽  
Vol 42 (16) ◽  
pp. 1085
Author(s):  
Qian Gefei ◽  
Jin Zengsun ◽  
Lu Xianyi ◽  
Yu San ◽  
Zou Guangtian
Keyword(s):  
Thin Film ◽  
Plasma Cvd ◽  
Cvd Method ◽  
Diamond Thin Film ◽  
Glow Plasma ◽  
Film Synthesis

1316 Study about synthesis of DLC thin film using plasma CVD method

2012 ◽  
Vol 2012.50 (0) ◽  
pp. 131601-131602
Author(s):  
Takashi MORIKAWA ◽  
Shinobu MUKASA ◽  
Hiromichi TOYOTA ◽  
Shinnfuku NOMURA
Keyword(s):  
Thin Film ◽  
Plasma Cvd ◽  
Cvd Method

Microcrystal Si Films Prepared by Remote Plasma CVD

1989 ◽  
Vol 164 ◽  
Author(s):  
Sung Chul Kim ◽  
Jung Tae Hwang ◽  
Seung Kyu Lee ◽  
Chang Young Jung ◽  
Sung Moo Soe ◽  
...  
Keyword(s):  
Rf Power ◽  
Plasma Cvd ◽  
Remote Plasma ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
Hydrogen Dilution ◽  
Power Yield ◽  
Si Films ◽  
Hydrogen Radicals ◽  
P Type

AbstractThe effects of deposition temperature, rf power and hydrogen dilution ratio on the growth, structure and transport of p-type microcrystal(μc-) Si films deposited by remote plasma CVD have been investigated. While low substrate temperature and low rf power yield small grain sizes, high temperature and high rf power tend to supress the growth of grains. The etching of Si by hydrogen radicals plays an important role to grow μc-Si, but excess etching supresses the growth of crystallites. We obtained 400 A of grain size and 3.5 S/cm of room temperature conductivity for p-type μ-Si.

scholarly journals Investigation of CdZnTe for Thin-Film Tandem Solar Cell Applications

2003 ◽  
Vol 763 ◽  
Author(s):  
Ramesh Dhere ◽  
Tim Gessert ◽  
Jie Zhou ◽  
Sally Asher ◽  
Joel Pankow ◽  
...  
Keyword(s):  
Thin Film ◽  
Compositional Analysis ◽  
Film Deposition ◽  
Alloy Formation ◽  
Device Performance ◽  
Radio Frequency Sputtering ◽  
Heat Treated ◽  
Zn Content ◽  
Effect Of Oxygen ◽  
Deposited Films

AbstractModeling of two-junction tandem devices shows that for optimal device performance, the bandgap of the top cell should be around 1.6-1.8 eV. CdZnTe alloys can be tailored to yield bandgaps in the desired range. In this study, three approaches were used to fabricate these films. The CdTe and ZnTe films were deposited by close-spaced sublimation (CSS) and radio-frequency sputtering (RFS) techniques respectively. In the first approach, we used mixed powders of CdTe and ZnTe as the source for film deposition by CSS. Even for the ZnTe/CdTe (95:5 ratio) source material, the deposited films were entirely CdTe due to higher vapor pressure of CdTe. In the second approach, we used pre-alloyed CdZnTe powders (CERAC, Inc.) as the source. Due to the lower sticking coefficient of Zn, even for the source composition of 75% Zn, these films contained very low quantities of Zn (∼5%). We tried unsuccessfully to increase the Zn content in the films by confining Zn vapor by enclosing the region between the source and substrate, reducing the substrate temperature to 400°C, and adjusting the source/substrate distance. Finally, we used thin-film couples consisting of 300-nm-thick CdTe deposited by CSS and 300-nm-thick ZnTe deposited by RFS; the samples were then heat-treated in cadmium chloride vapor. Compositional analysis of the samples showed extensive interdiffusion of Cd and Zn for the annealed samples. We will present the data on the various stack configurations of CdTe and ZnTe, the effect of different post-deposition anneals, the effect of oxygen on the interdiffusion and alloy formation and its possible correlation to the device performance degradation.

Experiments and analyses of SiC thin film deposition from organo-silicon by a remote plasma method

2000 ◽  
Vol 368 (2) ◽  
pp. 287-291 ◽  
Author(s):  
Y. Hatanaka ◽  
K. Sano ◽  
T. Aoki ◽  
A.M. Wrobel
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Remote Plasma ◽  
Plasma Method
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