Effect of Stoichiometry on the Ferroelectric Properties of (Pb1−xLax)TiO3 Thin Films

1998 ◽  
Vol 541 ◽  
Author(s):  
I-Nan Lin ◽  
Cheng-Hsiung Lin ◽  
Yen-Hua Hsu ◽  
Han-Fang Teng ◽  
Hsiu-Fung Cheng
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Leakage Current ◽  
Rapid Thermal Annealing ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
The Other ◽  
Post Annealing ◽  
Metal Organic ◽  
Organic Decomposition

AbstractThe (Pb1−xLax)TiO3, (PLT) thin films possessing good ferroelectric properties were successfully obtained by using metal-organic-decomposition (MOD) process, followed by furnace post-annealing at 600-700°C (60 min) or rapid thermal annealing (RTA) at 600-700°C (60 s). Excess Pb-species incorporated in precursors for compensating for the Pb-loss during MOD process results in pronounced modification on thin film's electrical properties. The leakage current is reduced from JL= 1 × 10−3 A/cm2 to 1 × 10−4 A/cm2 (at 400 kV/cm) and the remanent polarization is increased from Pr= 8.3 µ C/cm2 to 12.6 µC/cm2, when 10 mol% excess-Pb is added. On the other hand, larger La-content in PLT films results in more pronounced Pb-loss and induces larger leakage current, which significantly degrades the ferroelectric properties of the films. The best properties obtained for PLT films prepared by the MOD process are: Pr= 12.6 µC/cm2, Ec = 80 kV/cm and JL= 10−5 A/cm2 (at 400 kV/cm).

Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

2014 ◽  
Vol 633 ◽  
pp. 378-381
Author(s):  
Bei Li ◽  
X.B. Liu ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

Electrical properties of copper-nickel manganite thin films prepared by metal-organic decomposition

2017 ◽  
Vol 43 (12) ◽  
pp. 9291-9295 ◽  
Author(s):  
Chang Jun Jeon ◽  
Young Hun Jeong ◽  
Ji Sun Yun ◽  
Woon Ik Park ◽  
Jong Hoo Paik ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Copper Nickel ◽  
Metal Organic ◽  
Organic Decomposition

Enhanced Electrical properties in Mn-doped Bi3.25La0.75Ti3O12 thin films

2005 ◽  
Vol 902 ◽  
Author(s):  
Sushil Kumar Singh ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Switching Field ◽  
Mn Doping ◽  
Mn Doped

AbstractMn-doped Bi3.25La0.75Ti3O12 (BLT) thin films were fabricated by depositing sol-gel solutions on Pt/Ti/SiO2/Si <100> substrates. The surface morphology and ferroelectric properties of Mn-doped BLT films depend upon the orientation of the films. Small amount of Mn-doping in BLT films influences the ferroelectric properties of the films, that is, it enhances the remanent polarization and reduces the coercive field. The 1% Mn-doped BLT films show enhanced remanent polarization and reduced the coercive field by about 22%. To the contrary, Mn-doping more than 1% decreases polarization gradually. Mn-doping significantly improves the fatigue resistance of BLT films. The reduced polarization in the 3.3% Mn-doped thin film recovers during switching cycles higher than 5 × 105. Under high switching field, the probability of field-assisted unpinning of domains is expected to be high and this may be the main cause for increase in polarization after 5 × 105 in the 3.3% Mn-doped BLT film.

Preparation and Properties of ferroelectric Bi2SrTa2O9 thin films for FeRAM using Flash-MOCVD

1995 ◽  
Vol 415 ◽  
Author(s):  
T. Ami ◽  
K. Hironaka ◽  
C. Isobel ◽  
N. Nagel ◽  
M. Sugiyama ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Type Structure ◽  
Structural And Electrical Properties ◽  
Fluorite Type ◽  
Deposited Films ◽  
Flowing Oxygen

ABSTRACTFerroelectric Bi2 SrTa2 O9 thin films were successfully prepared by liquid delivery MOCVD, and structural and electrical properties were investigated. As-deposited films showed sharp distinct peaks, which were indexed assuming a fluorite-type structure. These precursors were transformed to bismuth-layered structures by annealing at 800 °C in flowing oxygen. Reasonable ferroelectric properties were observed in a film with 170 nm-thickness. Remanent polarization and coercive field were estimated to be 5.2 μC/cm2 and 52 kV/cm, respectively, at 5V.

Ferroelectric Characteristics of SrxBi2.4Ta2O9 Thin Films and Electrical Properties of the Pt/SrxBi2.4Ta2O9/TiO2/Si Structure

2004 ◽  
Vol 449-452 ◽  
pp. 477-480
Author(s):  
J.H. Choi ◽  
Tae Sung Oh
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Memory Window ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Metalorganic Decomposition ◽  
Ferroelectric Hysteresis

Ferroelectric characteristics of the 400 nm-thick SrxBi2.4Ta2O9(0.7≤x≤1.3) thin films processed by metalorganic decomposition were investigated, and electrical properties of the Pt/Sr0.85Bi2.4Ta2O9/TiO2/Si structure prepared using TiO2 buffer layer were characterized. The Sr-deficient SrxBi2.4Ta2O9 films exhibited well-developed ferroelectric hysteresis curves compared to those of the Sr-excess films. The Sr0.85Bi2.4Ta2O9 film exhibited optimum ferroelectric properties, such as high remanent polarization and low leakage current density, among SrxBi2.4Ta2O9 films. A memory window of the Pt/SrxBi2.4Ta2O9/TiO2/Si structure was dependent upon the coercive field of the SrxBi2.4Ta2O9 film, and the Pt/SrxBi2.4Ta2O9/TiO2/Si exhibited a maximum memory window of 1.3 V at the sweeping voltage of ±5 V.

SYSTEMATIC EXPLORATION OF THE EFFECTS OF CR-DOPING ON MICROSTRUCTURE, INSULATING, AND FERROELECTRIC PROPERTIES OF BiFeO3 THIN FILM

2019 ◽  
Vol 26 (03) ◽  
pp. 1850166 ◽  
Author(s):  
HUITING SUI ◽  
HUAJUN SUN ◽  
XIAOFANG LIU ◽  
SHANSHAN GUO ◽  
HUAN YANG ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Leakage Current ◽  
Remanent Polarization ◽  
Fatigue Behavior ◽  
Ferroelectric Properties ◽  
Ohmic Conduction ◽  
Si Substrate ◽  
Systematic Exploration ◽  
Cr Doping

BiFe[Formula: see text]CrxO3 ([Formula: see text]BFCO, [Formula: see text], 0.02, 0.03, 0.04, 0.05) thin films were successfully fabricated onto Pt(111)/TiO2/SiO2/Si substrate via a solgel process. The correlation between microstructure and insulating, ferroelectric properties of [Formula: see text]BFCO thin films are investigated. The leakage behavior for all the thin films is in accordance with the Ohmic conduction and FN Tunneling emission during low and high electric field region, respectively. Compared with the pure BFO, all the thin films with Cr[Formula: see text] doping possess reduced leakage current density by 1–2 orders of magnitude, with the lowest value approximately 10[Formula: see text] at 200[Formula: see text]kV/cm. Moreover, the 0.04BFCO thin film exhibits the maximum remanent polarization ([Formula: see text]) value of 29.8[Formula: see text][Formula: see text]C/cm2 with a great fatigue behavior, which could be ascribed to the absence of impurity phase and reduced leakage current.

scholarly journals Robust ferroelectricity enhancement of PZT thin films by a homogeneous seed layer

2021 ◽  
Author(s):  
jie jiang ◽  
Lei Liu ◽  
Kuo Ouyang ◽  
Zhouyu Chen ◽  
Shengtao Mo ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Remanent Polarization ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Large Dielectric Constant ◽  
Sol Gel Process ◽  
A New Technique

Abstract With its excellent ferroelectric properties such as large dielectric constant and large remanent polarization, PZT thin films are extensively used in micro-sensors and other devices. In this study, the sol-gel process was used to fabricate Pb(Zr0.52Ti0.48)O3 thin films with Pb(ZrxTi1−x)O3 seed islands. The experimental consequences demonstrate that all the Pb(Zr0.52Ti0.48)O3 thin films with Pb(ZrxTi1−x)O3 seeds show pure perovskite phase with no other impurity phases, and the electrical properties of Pb(Zr0.52Ti0.48)O3 thin films modified by Pb(ZrxTi1−x)O3 seed islands with different Zr/Ti ratios are improved, such as remanent polarization increased, dielectric properties increased, coercive electric field decreased, leakage current density decreased, etc. In particular, the electrical properties of the Pb(Zr0.52Ti0.48)O3 thin films with Pb(ZrxTi1−x)O3 seed islands are the most optimal when the x is 0.52. This paper provides a new technique for optimizing the electrical properties of PZT thin films, which is of great significance for breaking through the bottleneck of the development of ferroelectric memory.

Sign in / Sign up

Export Citation Format

Share Document