Chemical Vapor Deposition Technology of (Ba,Sr)TiO3 Thin Films for Gbit-Scale Dynamic Random Access Memories

1998 ◽  
Vol 541 ◽  
Author(s):  
Tsuyoshi Horikawa ◽  
Masayoshi Tarutani ◽  
Takaaki Kawahara ◽  
Mikio Yamamuka ◽  
Noriko Hirano ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Leakage Current ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Current Status ◽  
Good Thermal Stability ◽  
Coverage Ratio ◽  
Cvd Method ◽  
Post Annealing ◽  
Liquid Source

AbstractThe current status of (Ba,Sr)TiO3 [BST] capacitor technology using a liquid source chemical vapor deposition (CVD) method is reviewed, focusing on the CVD techniques and the physical, electrical and process-integration-related properties of Ru/BST/Ru capacitors. The use of a new titanium metalorganic (MO) source, titanium bis(tert-butoxy) bis(dipivaloylmethanato) [Ti(tertBuO)2 (DPM)2] dissolved in tetrahydrofuran (THF) turned out to enable highly conformal deposition of BST films with a coverage ratio of ∼ 70 % for a trench with an aspect ratio of ∼ 5. Electrical properties of a 24-nm-thick BST film, deposited on a Pt substrate at a low substrate temperature of 480 °C, were also confirmed to be equivalent SiO2 thickness (teq) of ∼ 0.5 nm and leakage current of ∼ 1 ×10-7 A/cm2 at 1 V. As for the Ru/BST/Ru capacitors, no deteriorations of Ru electrode and BST/Ru interface were observed after 750 °C post-annealing experiment, showing good thermal stability of Ru as a practical electrode material. Although current leak through Ru/BST/Ru capacitors slightly increased after the H2 annealing, such degradation in the leakage properties was restored by post-annealing in N2 ambience. Integrated Ru/BST/Ru capacitors with a 30-nm-thick CVD-BST film were fabricated by 0.5 μm ULSI technology, and low leakage current was confirmed for the stacked capacitors. Regarding the reproducibility of BST deposition by the liquid source CVD method, the deviation ratio of ∼ ± 2.3 % in film thickness was obtained for ∼ 100 successive depositions, thickness uniformity across the wafers was ∼ ± 1.1 %. The above results imply the potential applicability of BST capacitor technology using a liquid source CVD method for Gbit-scale DRAMs.

Low Pressure Chemical Vapor Deposition of Tungsten and Aluminum for VLSI Applications

1986 ◽  
Vol 71 ◽  
Author(s):  
R. A. Levy ◽  
M. L. Green
Keyword(s):  
Surface Roughness ◽  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Leakage Current ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Current Status ◽  
Tungsten Hexafluoride ◽  
Excess Surface ◽  
Pressure Chemical

AbstractThis paper reviews the current status of LPCVD tungsten and aluminum for VLSI applications. Using deposition chemistries based on tungsten hexafluoride and tri-isobutyl aluminum, W and Al deposits are characterized with respect to their electrical, mechanical, structural, chemical and optical properties. Although results of this study prove these two LPCVD processes to be compatible with current VLSI fabrication, certain problems must still be resolved for complete commercial acceptance. These problems include, in the case of selective LPCVD tungsten, the occurrence of leakage current across N+/P-Tub junctions, and in the case of LPCVD aluminum, the relatively poor electromigration resistance (compared to Al-Cu) and excess surface roughness.

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

Low Temperature Preparation of High-Quality Pb(Zr,Ti)O3 Films by Metal Organic Chemical Vapor Deposition with High Reproducibility

2001 ◽  
Vol 688 ◽  
Author(s):  
Hiroshi Funakubo ◽  
Kuniharu Nagashima ◽  
Masanori Aratani ◽  
Kouji Tokita ◽  
Takahiro Oikawa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Process Window ◽  
High Quality ◽  
Low Temperature Preparation

AbstractPb(Zr,Ti)O3 (PZT) is one of the most promising materials for ferroelectric random access memory (FeRAM) application. Among the various preparation methods, metalorganic chemical vapor deposition (MOCVD) has been recognized as a most important one to realize high density FeRAM because of its potential of high-step-coverage and large-area-uniformity of the film quality.In the present study, pulsed-MOCVD was developed in which a mixture of the source gases was pulsed introduced into reaction chamber with interval. By using this deposition technique, simultaneous improvements of the crystallinity, surface smoothness, and electrical property of the film have been reached by comparing to the conventional continuous gas-supplied MOCVD. Moreover, this film had larger remanent polarization (Pr) and lower leakage current density. This is owing to reevaporation of excess Pb element from the film and increase of migration on the surface of substrate during the interval time.This process is also very effective to decrease the deposition temperature of the film having high quality. In fact, the Pr and the leakage current density of polycrystalline Pb(Zr0.35Ti0.65)O3 film deposited at 415 °C were 41.4 μC/cm2 and on the order of 10−7 A/cm2 at 200 kV/cm. This Pr value was almost the same as that of the epitaxially grown film deposited at 415 °C with the same composition corrected for the orientation difference. This suggests that the polycrystalline PZT film prepared by pulsed-MOCVD had the epitaxial-grade ferroelectric properties even through the deposition temperature was as low as 415 °C. Moreover, large “process window” comparable to the process window at 580 °C, above 150 °C higher temperature and was widely used condition, was achieved even at 395°C by the optimization of the deposition condition.

Properties and Production Mechanism of Low-Temperature Deposited CAT-CVD Poly-Silicon films

1992 ◽  
Vol 283 ◽  
Author(s):  
Hideki Matsumura ◽  
Yoichi Hosoda ◽  
Seijiro Furukawa
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gas Pressure ◽  
Silicon Films ◽  
Production Mechanism ◽  
Cvd Method ◽  
Poly Silicon ◽  
Deposition Conditions

ABSTRACTPoly-silicon films are obtained at temperatures as low as 400 °C by the catalytic chemical vapor deposition (cat-CVD) method, in which deposition gases are decomposed by the catalytic or pyrolytic reactions with a heated catalyzer near substrates. It is found that there are roughly two modes of deposition conditions such as low gas pressure mode and high gas pressure mode for obtaining poly-silicon films, and also that the Hall mobility of the cat-CVD poly-silicon films of low gas pressure mode sometimes exceeds over 100 cm2/Vs.

High-JcYBa2Cu3O7−δsuperconducting film grown by laser-assisted chemical vapor deposition using a single liquid source and its microstructure

2013 ◽  
Vol 26 (9) ◽  
pp. 095016 ◽  
Author(s):  
Pei Zhao ◽  
Akihiko Ito ◽  
Takeharu Kato ◽  
Daisaku Yokoe ◽  
Tsukasa Hirayama ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Liquid Source

Synthesis of Carbon Nanotubes from Polycyclic Compounds by CVD Method

2006 ◽  
Vol 320 ◽  
pp. 163-166 ◽  
Author(s):  
Koji Yamada ◽  
Kentaro Abe ◽  
Masafumi Mikami ◽  
Morihiro Saito ◽  
Jun Kuwano
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quartz Substrate ◽  
Chemical Vapor ◽  
Polycyclic Compounds ◽  
Cvd Method ◽  
Multi Walled Carbon Nanotubes ◽  
Synthesis Of Carbon Nanotubes ◽  
Walled Carbon Nanotubes

Multi-walled carbon nanotubes (MWCNTs) were synthesized from camphor by a chemical vapor deposition (CVD) method in a range of 750-900. The catalyst was fed in three ways: (a) a sputtered Fe-film on a quartz substrate (b) vaporized ferrocene in an Ar flow; (c) both of (a) and (b). In the case (c), highly pure, dense and aligned MWCNT arrays formed on the quartz substrate at 850, whereas nonaligned MWCNTs formed in the cases (a) and (b).

Synthysis of S Doped Y-Junction Carbon Nanotubes by CVD Method

2011 ◽  
Vol 183-185 ◽  
pp. 1731-1735 ◽  
Author(s):  
Xia Yuan ◽  
Xiao Juan Wu ◽  
Yu Liang An ◽  
Qing Yi Hou
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Carbon Disulfide ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Processing Parameters ◽  
Structure And Morphology ◽  
Cvd Method

The sulfur-doped Y-junction carbon nanotubes (S-YCNTs) were prepared by chemical vapor deposition of carbon disulfide using Fe as catalyst. Sulfur can be incorporated into the nanotubes with an identifiable amount, forming sulfur-doped carbon nanotubes. The growth of asymmetrical Y-branches in the nanotubes may be related to the presence of sulfur from precursor. The structure and morphology of S-YCNTs can be controlled by processing parameters. The S-YCNTs were characterized by SEM, TEM, EDX, and XPS, respectively. The growth mechanism of S-YCNTs was discussed in terms of the role of sulfur from carbon feedstock.

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