Studies of Electrical Polarization Fatigue in SrBi2Ta2O9 Thin Films

1998 ◽  
Vol 541 ◽  
Author(s):  
K. M. Lee ◽  
D. Thomas ◽  
S. H. Kim ◽  
J. P. Maria ◽  
A. I. Kingon ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Oxygen Vacancies ◽  
Remanent Polarization ◽  
Energy Levels ◽  
Bias Field ◽  
Charge Carriers ◽  
Temperature Dependent ◽  
Zero Bias ◽  
Electrical Polarization

AbstractThe polarization suppression and electrical properties directly associated with the electrical polarization fatigue in SrBi2Ta2O9system were systematically investigated using Pt/SBT/Pt capacitors. Three general observations were made after 109 switching cycles: (i) ∼95% of the remanent polarization was conserved, (ii) both high and zero bias field capacitance decreased, and (iii) leakage current density increased from approximately 10−7 to 10−5 A/cm2at ∼30kV/cm2. In addition, the “knee” field, at which the leakage abruptly increases, assumed smaller values with cumulative switching cycles. Temperature dependent leakage data was collected for both as-deposited and field-cycled samples. Based on these results, we propose the possibilities of enhanced concentration of charge carriers or additional reductions in interfacial conduction barriers. Motion of oxygen vacancies to less-shallow energy levels near electrode/ferroelectric interface may allow this mechanism to occur.

Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

2014 ◽  
Vol 633 ◽  
pp. 378-381
Author(s):  
Bei Li ◽  
X.B. Liu ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

The Defect Structure of BaTiO3 Thin Films

1993 ◽  
Vol 310 ◽  
Author(s):  
L.A. Wills ◽  
B.W. Wessels
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Defect Structure ◽  
Oxygen Vacancies ◽  
Vacuum Annealing ◽  
Deep Level ◽  
Energy Levels ◽  
The Other ◽  
Optical Cross Section ◽  
Impurity Defects

AbstractThe defect structure of BaTiO3 thin films grown on (100) Si was examined using transient photocapacitance spectroscopy. The concentration, optical cross section and associated energy levels of both native and impurity defects in as-grown and annealed BaTiO3 films were evaluated. Deep level defects withpeak energies of Ev+1.8, Ev+2.4, Ev+2.7, Ev+3.0-3.1 and Ev+3.2-3.3 eV were observed in the as-grown films. Upon vacuum annealing, the concentration of the traps at Ev+3.0 and Ev+3.2 eV increased while the concentration of the traps at Ev+ 1.8 and Ev+2.4 eV decreased. The levels at Ev+3.0-3.1 and Ev+3.2-3.3 eV are attributed to oxygen vacancies. The other levels are tentatively ascribed to Fe and Fe related defects.

Electrical Properties of Perovskite-Based Ferroelectric Thin Films Modified Using Rare-Earth Elements

2006 ◽  
Vol 320 ◽  
pp. 49-52
Author(s):  
Hiroshi Uchida ◽  
Hiroshi Nakaki ◽  
Hiroshi Funakubo ◽  
Seiichiro Koda
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Electrical Properties ◽  
Lead Zirconate Titanate ◽  
Remanent Polarization ◽  
Lead Zirconate ◽  
Solution Deposition ◽  
Si Substrates ◽  
Crystal Anisotropy ◽  
Insulating Properties

The electrical properties of perovskite-based ferroelectric films were improved by ion modification using rare-earth cations. Thin films of rare-earth-modified lead zirconate titanate [Pb(Zr,Ti)O3] were fabricated on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition technique. The substitution of volatile cations in the simple-perovskite oxides, such as Pb2+ in Pb(Zr,Ti)O3 films, enhanced the insulating properties of the film. The crystal anisotropy of the Pb(Zr,Ti)O3 film could be controlled by varying the species and the amount of replacing cations to enhance the spontaneous polarization. Thus, ion modification using Dy3+ cation could enhance the remanent polarization of Pb(Zr,Ti)O3 film consequently.

scholarly journals Electron-Beam-Induced Current and Cathodoluminescence Study of Dislocations in SrTiO3

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 736
Author(s):  
Wei Yi ◽  
Jun Chen ◽  
Takashi Sekiguchi
Keyword(s):  
Electron Beam ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Energy Levels ◽  
Induced Current ◽  
Temperature Dependent ◽  
Recombination Activity ◽  
Defect Energy ◽  
Electron Beam Induced Current ◽  
Cathodoluminescence Study

Electron-beam-induced current (EBIC) and cathodoluminescence (CL) have been applied to investigate the electrical and optical behaviors of dislocations in SrTiO3. The electrical recombination activity and defect energy levels of dislocations have been deduced from the temperature-dependent EBIC measurement. Dislocations contributed to resistive switching were clarified by bias-dependent EBIC. The distribution of oxygen vacancies around dislocations has been obtained by CL mapping. The correlation between switching, dislocation and oxygen vacancies was discussed.

Control of Grain Size of Pb(Zr,Ti)O3 Thin Films by MOCVD and the Effect of Size on the Electrical Properties

1998 ◽  
Vol 541 ◽  
Author(s):  
H. Fujisawa ◽  
S. Nakashima ◽  
M. Shimizu ◽  
H. Niu
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Grain Size ◽  
Electrical Properties ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Dielectric Constants ◽  
Pzt Thin Films ◽  
Pzt Films

AbstractThe grain size of MOCVD-Pb(Zr,Ti)O3 (PZT) thin films was successfully controlled by changing the grain size of Ir bottom electrodes and by changing the growth rate of PZT films. In Ir/PZT/Ir/SiO2/Si capacitors, the grain size of PZT thin films increased from 120 to 240nm as the grain size of bottom Ir electrodes increased from 50 to 200nm. The dielectric constants of PZT thin films increased from 760 to 1440 as the grain size increased from 120 to 240nm. Remanent polarization increased and coercive field decreased as the grain size increased. This dependence of electrical properties on the grain size coincided with that of ceramics.

Enhanced Electrical properties in Mn-doped Bi3.25La0.75Ti3O12 thin films

2005 ◽  
Vol 902 ◽  
Author(s):  
Sushil Kumar Singh ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Switching Field ◽  
Mn Doping ◽  
Mn Doped

AbstractMn-doped Bi3.25La0.75Ti3O12 (BLT) thin films were fabricated by depositing sol-gel solutions on Pt/Ti/SiO2/Si <100> substrates. The surface morphology and ferroelectric properties of Mn-doped BLT films depend upon the orientation of the films. Small amount of Mn-doping in BLT films influences the ferroelectric properties of the films, that is, it enhances the remanent polarization and reduces the coercive field. The 1% Mn-doped BLT films show enhanced remanent polarization and reduced the coercive field by about 22%. To the contrary, Mn-doping more than 1% decreases polarization gradually. Mn-doping significantly improves the fatigue resistance of BLT films. The reduced polarization in the 3.3% Mn-doped thin film recovers during switching cycles higher than 5 × 105. Under high switching field, the probability of field-assisted unpinning of domains is expected to be high and this may be the main cause for increase in polarization after 5 × 105 in the 3.3% Mn-doped BLT film.

Preparation and Properties of ferroelectric Bi2SrTa2O9 thin films for FeRAM using Flash-MOCVD

1995 ◽  
Vol 415 ◽  
Author(s):  
T. Ami ◽  
K. Hironaka ◽  
C. Isobel ◽  
N. Nagel ◽  
M. Sugiyama ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Type Structure ◽  
Structural And Electrical Properties ◽  
Fluorite Type ◽  
Deposited Films ◽  
Flowing Oxygen

ABSTRACTFerroelectric Bi2 SrTa2 O9 thin films were successfully prepared by liquid delivery MOCVD, and structural and electrical properties were investigated. As-deposited films showed sharp distinct peaks, which were indexed assuming a fluorite-type structure. These precursors were transformed to bismuth-layered structures by annealing at 800 °C in flowing oxygen. Reasonable ferroelectric properties were observed in a film with 170 nm-thickness. Remanent polarization and coercive field were estimated to be 5.2 μC/cm2 and 52 kV/cm, respectively, at 5V.

Influence of Geometrical Parameters on the Electrical Properties of Ferroelectric Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
S.P. Faure ◽  
P. Gaucher ◽  
J.P. Ganne
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Mean Value ◽  
Ferroelectric Thin Films ◽  
Geometrical Parameters ◽  
Electrical Characteristics ◽  
Electrode Size ◽  
Sol Gel Process

AbstractFerroelectric thin films of PbZr0.5Ti0.5O3 were prepared by sol-gel process. Top electrodes of different sizes were deposited on thin films in order to study their influence on electrical properties. Histograms of the measured electrical characteristics are related to the electrode sizes. By reducing the electrode size, it is possible to improve the electrical properties of the film. Various properties, such as remanent polarization Pr and coercive voltage Vc, were measured statistically in order to show the evolution of their mean value and of their variance with the electrode size.

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