Radiation Induced Nucleation of Nanoparticles in Silica

1998 ◽  
Vol 540 ◽  
Author(s):  
D. Ila ◽  
E. K. Williams ◽  
D. B. Poker ◽  
D. K. Hensley ◽  
C. Klatt ◽  
...  
Keyword(s):  
Direct Methods ◽  
Indirect Measurement ◽  
Electronic Energy ◽  
Implantation Dose ◽  
Measurement Methods ◽  
Total Electronic Energy ◽  
Absorption Spectrophotometry ◽  
Transmission Electron ◽  
Radiation Induced ◽  
Non Destructive

AbstractIn this paper, we present the results of our investigation of producing nanoclusters of gold in silica at fluences of two orders of magnitude less than what is traditionally used This is accomplished by implanting 2.0 MeV Au into silica followed by MeV bombardment by MeV Si ions. The size of the nanoclusters, ranging from one to 10 nanometers, is controlled by the implantation dose and by the total electronic energy deposited by each post bombarding ion in the implanted layer. By both indirect measurement methods, such as optical absorption spectrophotometry (non-destructive), and direct methods, such as transmission electron microscopy (destructive) we show how and at what concentrations gold nucleates to form nanoparticles by radiation-enhanced nucleation at a dose below that needed for spontaneous nanoparticle formation.

Structural modifications of Gd2Zr2-xTixO7 pyrochlore induced by swift heavy ions: Disordering and amorphization

2009 ◽  
Vol 24 (4) ◽  
pp. 1322-1334 ◽  
Author(s):  
M. Lang ◽  
F.X. Zhang ◽  
R.C. Ewing ◽  
Jie Lian ◽  
Christina Trautmann ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Structural Changes ◽  
Pyrochlore Structure ◽  
Fluorite Structure ◽  
Structure Type ◽  
Electronic Energy ◽  
Inert Matrix ◽  
Swift Heavy Ions ◽  
Transmission Electron ◽  
Radiation Induced

The isometric, pyrochlore structure type, A2B2O7, exhibits a wide variety of properties that find application in a large number of different technologies, from electrolytes in solid oxide fuel cells to actinide-bearing compositions that can be used as nuclear waste forms or inert matrix nuclear fuels. Swift xenon ions (1.43 GeV) have been used to systematically modify different compositions in the Gd2Zr2-xTixO7 binary at the nanoscale by radiation-induced phase transitions that include the crystalline-to-amorphous and order-disorder structural transformations. Synchrotron x-ray diffraction, Raman spectroscopy, and transmission electron microscopy provide a complete and consistent description of structural changes induced by the swift heavy ions and demonstrate that the response of pyrochlore depends strongly on chemical composition. The high and dense electronic energy deposition primarily results in amorphization of Ti-rich pyrochlore; whereas the formation of the fully disordered, defect-fluorite structure is the dominant process for Zr-rich pyrochlore.

Annealing Of Radiation Damage in Tungsten

1970 ◽  
Vol 28 ◽  
pp. 412-413
Author(s):  
Robert C. Rau ◽  
John Moteff
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Radiation Damage ◽  
Thermal Annealing ◽  
Neutron Fluence ◽  
Dislocation Loops ◽  
Defect Clusters ◽  
Polycrystalline Tungsten ◽  
Transmission Electron ◽  
Radiation Induced

Transmission electron microscopy has been used to study the thermal annealing of radiation induced defect clusters in polycrystalline tungsten. Specimens were taken from cylindrical tensile bars which had been irradiated to a fast (E > 1 MeV) neutron fluence of 4.2 × 1019 n/cm2 at 70°C, annealed for one hour at various temperatures in argon, and tensile tested at 240°C in helium. Foils from both the unstressed button heads and the reduced areas near the fracture were examined.Figure 1 shows typical microstructures in button head foils. In the unannealed condition, Fig. 1(a), a dispersion of fine dot clusters was present. Annealing at 435°C, Fig. 1(b), produced an apparent slight decrease in cluster concentration, but annealing at 740°C, Fig. 1(C), resulted in a noticeable densification of the clusters. Finally, annealing at 900°C and 1040°C, Figs. 1(d) and (e), caused a definite decrease in cluster concentration and led to the formation of resolvable dislocation loops.

Luminescence from individual dislocations in II-VI and III-V semiconductors

1991 ◽  
Vol 49 ◽  
pp. 834-835
Author(s):  
J W Steeds
Keyword(s):  
Group Iv ◽  
Luminescence Properties ◽  
Carrier Recombination ◽  
Transmission Electron ◽  
Wide Range ◽  
Basic Physics ◽  
Semiconducting Compounds ◽  
Diamond Group ◽  
Non Destructive ◽  
Technological Significance

There is a wide range of experimental results related to dislocations in diamond, group IV, II-VI, III-V semiconducting compounds, but few of these come from isolated, well-characterized individual dislocations. We are here concerned with only those results obtained in a transmission electron microscope so that the dislocations responsible were individually imaged. The luminescence properties of the dislocations were studied by cathodoluminescence performed at low temperatures (~30K) achieved by liquid helium cooling. Both spectra and monochromatic cathodoluminescence images have been obtained, in some cases as a function of temperature.There are two aspects of this work. One is mainly of technological significance. By understanding the luminescence properties of dislocations in epitaxial structures, future non-destructive evaluation will be enhanced. The second aim is to arrive at a good detailed understanding of the basic physics associated with carrier recombination near dislocations as revealed by local luminescence properties.

Ultrastructural Immunocytochemistry of Five Rat Pituitary Adenomas

1980 ◽  
Vol 38 ◽  
pp. 724-725
Author(s):  
D. J. McComb ◽  
N. Ryan ◽  
E. Horvath ◽  
K. Kovacs ◽  
E. Nagy ◽  
...  
Keyword(s):  
Pituitary Adenomas ◽  
Pituitary Tumors ◽  
Electron Microscopic ◽  
Electron Microscopic Immunocytochemistry ◽  
Transmission Electron ◽  
Rat Pituitary ◽  
Radiation Induced ◽  
Group 5 ◽  
Group 2 ◽  
Microscopic Techniques

Conventional light and electron microscopic techniques failed to clarify the cellular composition and derivation of spontaneous and induced, intrasellar and transplanted pituitary adenomas in rats (1). In the present work, electron microscopic immunocytochemistry was applied to evaluate five adenohypo-physial tumors using a technique described by Moriarty and Garner (2). Spontaneously occurring pituitary adenomas (group 1) were harvested from aging female Long-Evans rats. R-Amsterdam rats were treated with 2 x 1.0 mg estrone acetate (HogivaI) s.c. weekly for 6 months. Pituitary adenomas in excess of 30 mg were removed from these animals to make up the tumors of group 2. Groups 3 and 4 consisted of estrogen-induced autonomous transplan¬ted pituitary tumors MtT.WlO and MtT.F4. Group 5 was a radiation-induced transplanted autonomous pituitary tumor MtT.W5. The tumors of groups 3,4 and 5 were allowed to proliferate in host rats 6-8 weeks prior to removal for processing. Tissue was processed for transmission electron microscopy (glutaraldehyde fixation, OsO4 postfixation and epoxy resin embedding), and electron microscopic immunocytochemistry (3% paraformaldehyde fixation and Araldite embedding).

Structural and Electrical Characterization of Si-Implanted TiN as a Diffusion Barrier for Cu Metallization

1995 ◽  
Vol 391 ◽  
Author(s):  
W.F. Mcarthur ◽  
K.M. Ring ◽  
K.L. Kavanagh
Keyword(s):  
Leakage Current ◽  
Diffusion Barrier ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Implantation Dose ◽  
Cu Metallization ◽  
Reverse Leakage Current ◽  
Transmission Electron ◽  
Current Voltage

AbstractThe feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.

Radiation Induced Formation of Acrylated Palm Oil (APO) Nanoparticles Using Cetyltrimethylammonium Bromide Microemulsion System

2011 ◽  
Vol 364 ◽  
pp. 278-282
Author(s):  
Rida Tajau ◽  
Dahlan Khairul Mohd. Zaman ◽  
Mohd Hilmi Mahmood ◽  
Wan Md Zin Wan Yunus ◽  
Hashim Kamaruddin
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Palm Oil ◽  
Chemical Structure ◽  
Cetyltrimethylammonium Bromide ◽  
Control Process ◽  
Microemulsion System ◽  
Transmission Electron ◽  
Radiation Induced ◽  
The Fourier Transform

In this study, we report the preparation of Acrylated Palm Oil (APO) nanoparticles using aqueous Cetyltrimethylammonium bromide (CTAB) microemulsion system. This microemulsion system which contains the dispersed APO nanodroplets was subjected to the gamma irradiation to induce the formation of the crosslinked APO nanoparticles. The dynamic light scattering (DLS), the Fourier Transform Infrared (FTIR) spectrocospy and the Transmission Electron Microscopy (TEM) were used to characterize the size and the chemical structure of the nanoparticle. Sized of the APO nanoor microparticle can be varied depended on the volumes of the modified palm oil and the irradiation doses. Their size is in the range of 73 to 100 nanometer (nm) after irradiation using gamma irradiator. This radiation-induced method provides a free initiator induced and easy to control process as compared to the classical or chemical initiator process.

Low-cost Indirect Measurement Methods for Self-x Integrated Sensory Electronics for Industry 4.0

2020 ◽  
Vol 87 (s1) ◽  
pp. s79-s84
Author(s):  
Qummar Zaman ◽  
Senan Alraho ◽  
Andreas König
Keyword(s):  
Industry 4.0 ◽  
Degrees Of Freedom ◽  
Performance Metrics ◽  
Low Cost ◽  
Indirect Measurement ◽  
Measurement Methods ◽  
Instrumentation Amplifier ◽  
Performance Parameters ◽  
Current Feedback ◽  
Indirect Measurements

AbstractThe conventional method for testing the performance of reconfigurable sensory electronics of industry 4.0 relies on the direct measurement methods. This approach gives higher accuracy but at the price of extremely high testing cost and does not utilize the new degrees of freedom for measurement methods enabled by industry 4.0. In order to reduce the test cost and use available resources more efficiently, a primary approach, called indirect measurements or alternative testing has been proposed using a non-intrusive sensor. Its basic principle consists in using the indirect measurements, in order to estimate the sensory electronics performance parameters without measuring directly. The non-intrusive property of the proposed method offers better performance of the sensing electronics and virtually applicable to any sensing electronics. Efficiency is evaluated in terms of model accuracy by using six different classical metrics. It uses an indirect current-feedback instrumentation amplifier (InAmp) as a test vehicle to evaluate the performance parameters of the circuit. The device is implemented using CMOS 0.35 μm technology. The achieved maximum value of average expected error metrics is 0.24, and the lowest value of correlation performance metrics is 0.91, which represent an excellent efficiency of InAmp performance predictor.

Elevated Temperature Implantation of GaAs with Si Ions.

1996 ◽  
Vol 438 ◽  
Author(s):  
R. A. Brown ◽  
J. S. Williams
Keyword(s):  
Elevated Temperatures ◽  
Amorphous Layer ◽  
Ion Flux ◽  
Implantation Temperature ◽  
Transmission Electron ◽  
Order Of Magnitude ◽  
Residual Damage ◽  
Radiation Induced ◽  
Small Clusters ◽  
Induced Defects

AbstractThe formation of amorphous layers in GaAs during ion bombardment at elevated temperatures, where dynamic annealing of radiation-induced defects is substantial, is shown to be extremely sensitive to the ion flux, fluence, and implantation temperature. For example, with increasing fluence, damage can first build up extremely slowly, then suddenly collapse to the amorphous phase. Alternatively, for a constant ion fluence, a change in flux by one order of magnitude can change the critical temperature for amorphisation by 27°C, and at constant flux and fluence, a change of only 6°C can alter the residual damage from small clusters barely visible by conventional transmission electron microscopy and Rutherford backscattering to a thick amorphous layer. The temperature at which this occurs is strongly dependent upon the ion flux and fluence.

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