Characterization of an Extended Reactive Noble-Metal/III-V Semiconductor Interface: Cu/GaAs(110)

1985 ◽  
Vol 54 ◽  
Author(s):  
J. J. Joyce ◽  
J. H. Weaver
Keyword(s):  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Earth Metal ◽  
Core Level ◽  
Spectroscopy Analysis ◽  
Semiconductor Interface ◽  
Band Bending ◽  
Level Data ◽  
Initial Intensity

ABSTRACTWe examine the electronic structure of the Cu/GaAs(110) interface using high resolution synchrotron radiation photoelectron spectroscopy. Analysis of valence band and core level spectra indicate that a reactive, extended interface is formed when Cu is deposited on the cleaved GaAs(110) surface at room temperature. Arsenic 3d core level data show a single reacted component shifted 500 meV to lower binding energy while the Ga 3d core shows a reacted component shifted by 800 meV below the substrate position. Core level attenuation curves indicate preferential As outdiffusion with the As signal at 30% of initial intensity for 100 ML of Cu while the Ga intensity for the same coverage has dropped to 2% of initial intensity. Band bending results show two separate regions of interest with a secondary pinning position 775 meV below the CBM for n-type GaAs. Results are discussed in light of thermodynamic and electronegativity parameters as well as other transition and rare-earth metal GaAs interfaces.

scholarly journals Characterization of Ti/SnO2 Interface by X-ray Photoelectron Spectroscopy

Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 202
Author(s):  
Miranda Martinez ◽  
Anil R. Chourasia
Keyword(s):  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Chemical Interaction ◽  
Photoelectron Spectra ◽  
X Ray ◽  
Increasing Trend ◽  
Substrate Temperatures ◽  
Beam Technique

The Ti/SnO2 interface has been investigated in situ via the technique of x-ray photoelectron spectroscopy. Thin films (in the range from 0.3 to 1.1 nm) of titanium were deposited on SnO2 substrates via the e-beam technique. The deposition was carried out at two different substrate temperatures, namely room temperature and 200 °C. The photoelectron spectra of tin and titanium in the samples were found to exhibit significant differences upon comparison with the corresponding elemental and the oxide spectra. These changes result from chemical interaction between SnO2 and the titanium overlayer at the interface. The SnO2 was observed to be reduced to elemental tin while the titanium overlayer was observed to become oxidized. Complete reduction of SnO2 to elemental tin did not occur even for the lowest thickness of the titanium overlayer. The interfaces in both the types of the samples were observed to consist of elemental Sn, SnO2, elemental titanium, TiO2, and Ti-suboxide. The relative percentages of the constituents at the interface have been estimated by curve fitting the spectral data with the corresponding elemental and the oxide spectra. In the 200 °C samples, thermal diffusion of the titanium overlayer was observed. This resulted in the complete oxidation of the titanium overlayer to TiO2 upto a thickness of 0.9 nm of the overlayer. Elemental titanium resulting from the unreacted overlayer was observed to be more in the room temperature samples. The room temperature samples showed variation around 20% for the Ti-suboxide while an increasing trend was observed in the 200 °C samples.

scholarly journals Synthesis and characterization of nanoscale composite particles formed by 2D layers of Cu-Fe sulfide and Mg-based hydroxide

2021 ◽  
Author(s):  
Yuri Mikhlin ◽  
Roman Borisov ◽  
Sergey Vorobyev ◽  
Yevgeny Tomashevich ◽  
Alexander Romanchenko ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Localized Surface Plasmon ◽  
X Ray ◽  
Zeta Potentials ◽  
Dielectric Resonance ◽  
Magnetic Dynamic ◽  
20 Nm ◽  
Electron Energy Loss

Two-dimensional phenomena are attracting enormous interest at present and the search for novel 2D materials is very challenging. We propose here the layered material valleriite composed of altering atomic sheets of Cu-Fe sulfide and Mg-based hydroxide synthesized via a simple hydrothermal pathway as particles of 50-200 nm in the lateral size and 10-20 nm thick. The solid products and aqueous colloids prepared with various precursor ratios were examined using XRD, TEM, EDS, X-ray photoelectron spectroscopy (XPS), reflection electron energy loss spectroscopy (REELS), Raman, Mössbauer, UV-vis-NIR spectroscopies, magnetic, dynamic light scattering, zeta potential measurements. The material properties are largely determined by the narrow-gap (less than 0.5 eV) sulfide layers containing Cu+ and Fe3+ cations, monosulfide and minor polysulfide anions but are strongly affected by the hydroxide counterparts. Particularly, Fe distribution between sulfide (55-90%) and magnesium hydroxide layers is controlled through insertion of Al into the hydroxide part and by Cr and Co dopants entering both layers. Room-temperature Mössbauer signals of paramagnetic Fe3+ transformed to several Zeeman sextets with hyperfine magnetic fields up to 500 kOe in the sulfide layers at 4 K. Paramagnetic or more complicated characters were observed for valleriites with higher and lower Fe concentrations in hydroxide sheets, respectively. Valleriite colloids showed negative zeta potentials, suggesting negative electric charging of the hydroxide sheets, and optical absorption maxima between 500 nm and 700 nm, also depended on the Fe distribution. The last features observed also in the REELS spectra may be due to localized surface plasmon or, more likely, quasi-static dielectric resonance. The tunable composition, electronic, magnetic, optic and surface properties highlight valleriites as a rich platform for novel 2D composites promising for numerous applications.

Characterization of SiO2/SiC Samples Using Photoelectron Spectroscopy

1999 ◽  
Vol 572 ◽  
Author(s):  
L. I. Johansson ◽  
P- A. Glans ◽  
Q. Wahab ◽  
T. M. Grehk ◽  
T. H. Eickhoff ◽  
...  
Keyword(s):  
Relative Intensity ◽  
Photoelectron Spectroscopy ◽  
Emission Angle ◽  
Core Level ◽  
By Products

ABSTRACTThe results of photoemission studies of SiO2/SiC samples for the purpose of revealing presence of any carbon containing by-products at the interface are reported. Two components could be identified in recorded Si 2p and C ls core level spectra. For Si 2p these were identified to originate from SiO2 and SiC while for C ls they were interpreted to originate from graphite like carbon and SiC. The variation in relative intensity of these components with emission angle was first investigated. Thereafter the intensity of the different components were studied after successive Ar+-sputtering cycles. Both experiments showed contribution from graphite like carbon on top of the oxide but not at the interface.

Strong Polarity and Bond Characterization of Nanostructured Silicon Nitride Solids

1992 ◽  
Vol 286 ◽  
Author(s):  
Lide Zhang ◽  
Chimei Mo ◽  
Tao Wang ◽  
Cunyi Xie
Keyword(s):  
Silicon Nitride ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Bond Properties ◽  
Dielectric Measurements ◽  
X Ray ◽  
Nanostructured Silicon ◽  
Spin Resonance ◽  
Measuring Frequency

ABSTRACTNanostructured silicon nitride solids (NANO–SSNS) were investigated by x–ray photoelectron spectroscopy (XPS), electron spin resonance (ESR) and dielectric measurements. It is found that the dielectric constant of NANO–SSNS depends strongly on the measuring frequency, f. When f<100Hz, at room temperature it is forty times as much as that of conventional Si3N4. ESR measurements show that a large number of unbinding electrons exist in interfaces. This suggests that the NANO–SSNS possess strong polarity. The study on the bond properties indicates that a large number of unsaturated and dangling bonds exist in interfaces of NANO–SSNS.

Formation of interfacial phases in the epitaxial growth of Sb on Si(111)-7 ¥ 7 reconstructed surface

2002 ◽  
Vol 74 (9) ◽  
pp. 1651-1661 ◽  
Author(s):  
Vinod Kumar Paliwal ◽  
A. G. Vedeshwar ◽  
S. M. Shivaprasad
Keyword(s):  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Branching Ratio ◽  
Interface State ◽  
Peak Position ◽  
Band Bending ◽  
Desorption Process ◽  
Surface Phase Transformation ◽  
Complementary Techniques ◽  
Reconstructed Surface

Understanding the evolution of the Sb/Si(111) interface is of great interest in the formation of devices of nanodimensions. We have undertaken in situ (∼10-11 torr) studies of Sb adsorption (at room temperature) and its desorption on the 7 X 7 reconstructed Si(111) surface, by complementary techniques such as X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), low-energy electron diffraction (LEED), and electron energy loss spectroscopy (EELS). For room-temperature (RT) Sb adsorption, the overlayer grows in the Frank van der Merwe mode, forming an interface state of δ(7 X 7) in the submonolayer Sb coverage regime. Adsorption of 1.0 monolayer (ML) Sb at RT shows an abrupt shift of 0.8 eV in the peak position of the Sb 3d5/2 transition owing to band-bending caused by a metallic (7 X 7) to a semiconducting (1 X 1) surface phase transformation. Changes observed in full width at half-maximum (fwhm) and Sb 3d3/2 and 3d5/2 branching ratio are discussed. Thermal annealing experiments provide evidence for agglomeration of Sb islands, before the multilayer and monolayer desorption. During this desorption process, we have observed two novel surface phases of (5 X 5) at 0.4 ML and (5√3 X 5√3­R30°) at 0.2 ML, stable at higher temperatures.

Characterization of europium implanted LiNbO3

1993 ◽  
Vol 8 (10) ◽  
pp. 2679-2685 ◽  
Author(s):  
P. Moretti ◽  
B. Canut ◽  
S.M.M. Ramos ◽  
R. Brenier ◽  
P. Thévenard ◽  
...  
Keyword(s):  
Single Crystals ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Rutherford Backscattering ◽  
Oxidation States ◽  
Xps Spectra ◽  
X Ray ◽  
Partial Recrystallization ◽  
Lower Charge

LiNbO3 single crystals were implanted at room temperature with Eu+ ions at 70 keV with fluence ranging from 0.5 to 5 × 1016 ions · cm−2. The damage in the implanted layer has been investigated by Channeling Rutherford Backscattering (RBS-C), and the oxidation states of the cations have been determined by x-ray photoelectron spectroscopy (XPS). Following implantation, a fully amorphized layer of 60 nm is generated, even for the lowest fluence employed. Subsequent annealing in air, in the range 800–1250 K, was applied to restore tentatively the crystallinity and promote the substitutional incorporation of Eu in the crystal. Only a partial recrystallization of the damaged layer was observed. For as-implanted samples, XPS spectra clearly reveal europium in Eu2+ and Eu3+ states, and the Nb5+ ions are driven to lower charge states.

Preparation and characterization of CuInS2 nanorods and nanotubes from an elemental solvothermal reaction

2001 ◽  
Vol 16 (10) ◽  
pp. 2805-2809 ◽  
Author(s):  
Yang Jiang ◽  
Yue Wu ◽  
Shengwen Yuan ◽  
Bo Xie ◽  
Shuyuan Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Transfer Reaction ◽  
Solvothermal Reaction ◽  
X Ray Diffraction ◽  
Spectroscopy Analysis ◽  
X Ray ◽  
Transmission Electron

A simple and convenient solvothermal reaction has been developed to produce CuInS2 nanorods and nanotubes from the elements in ethylenediamine at 280 °C. The products were characterized by x-ray diffraction, transmission electron microscopy, high-resolution transmission electron microscopy, scanning electron microscopy, and x-ray photoelectron spectroscopy. Analysis shows that the coordinating ability of ethylenediamine and the existence of liquid In may play important roles in the growth of one-dimension nanocrystallites and the electron-transfer reaction. In addition, spherical CuInS2 micrometer particles were obtained at 350 °C.

scholarly journals Advanced Sample Preparation Techniques for Surface Spectroscopy Analysis of Organic: Inorganic Hybrid Silica Particles

2021 ◽  
Author(s):  
Harekrishna Panigrahi ◽  
Smrutirekha Mishra ◽  
Suraj Kumar Tripathy
Keyword(s):  
Sample Preparation ◽  
Hybrid Materials ◽  
Photoelectron Spectroscopy ◽  
Materials Characterization ◽  
Spectroscopy Analysis ◽  
Hybrid Silica ◽  
Silica Materials ◽  
Preparation Techniques ◽  
Inorganic Network

Silica due to its large inorganic amorphous wall and hydrophilic surface properties renders its suitability for designing different varieties of organic–inorganic silica-based materials. Characterization of such hybrid silica-based materials is one of the fascinating as well as challenging topics to be covered. Surface analysis of these hybrid materials can be done utilizing various techniques, out of which X-ray photoelectron spectroscopy (XPS), 29Si Solid-state Nuclear magnetic resonance (NMR) spectroscopy, and Fourier-transform infrared spectroscopy (FTIR) is the most ideal ones. Thus, before analyzing these silica materials, it requires a massive study on its sample preparation for appropriate characterization of the organic molecules present in the inorganic network. Hence, this chapter will give a brief elucidation of the sample preparation techniques for analyzing the hybrid materials utilizing the above instrumentation techniques.

Characterization of Oxidized Nickel (II) Dimethylglyoxime Using X-Ray Photoelectron Spectroscopy

1987 ◽  
Vol 41 (6) ◽  
pp. 994-1000 ◽  
Author(s):  
V. Y. Young ◽  
F. C. Chang ◽  
K. L. Cheng
Keyword(s):  
Oxidation State ◽  
Photoelectron Spectroscopy ◽  
Binding Energies ◽  
Core Level ◽  
Solution Phase ◽  
Intensity Data ◽  
X Ray ◽  
Complex Core

X-ray photoelectron spectroscopy has been used to determine the oxidation state of nickel in the oxidized nickel (II) dimethylglyoxime complex. Core level binding energies for the Ni(2p), N(1s), and O(1s) levels; the presence or absence of shake-up satellites on the Ni(2p) levels; and the analysis of intensity data are consistent only with an assignment of +3. Structures consistent with the data are proposed for both the solid-and the solution-phase complexes.

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